• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.40-43
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• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.45-48
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• 2003

BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• Transactions of the Korean hydrogen and new energy society
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• v.2 no.1
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• pp.77-82
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• 1990

To investigate the effect of strains heat effect and thermal energy on the intrinsic degradation of $LaNi_5$, the changes of P-C-Isotherm curves under the condition of mainly applied one of the above factors were investigated. The revesible hydrogen storage capacity decreased by means of the hydrogenation at high temperature without cyclings or pressure induced cyclings with low thermal energy. The degree of degradation was more severe as the heat of hydrogenation reaction increased. Thus the intrinsic degradation of $LaNi_5$ depended upon lattice strain as well as thermal energy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.170-170
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• 2003

We have implanted on sapphire substrate with various ions and investigated the properties of GaN epilayers grown on implanted sapphire substrate by metal organic chemical vapor deposition (MOCVD). Sapphire is typical substrate for GaN epilayers. However, there are many problems such as lattice mismatch and thermal coefficient difference between sapphire substrate and GaN. The ion implanted substrate's surface had decreased internal tree energies during the growth of the GaN epilayer, md the misfit strain was relieved through the formation of an AlN phase on the ions implanted sapphire(0001) substrates. [1] The crystal and optical properties of GaN epilayer grown in ions implanted sapphire(0001) substrate were improved.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.302-307
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• 1999

We have grown a high quality ZnSe(100) epilayer on the GaAs(100) substrate by hot-wall epitaxy method. The FWHM value from double-crystal x-ray diffraction rocking curve and growth rate of the ZnSe epilayer grown under the optimal growth conditions were 195 arcsec and 0.03 $\mu \textrm m$/min, respectively. The $I_2^U$ and $I_2^L$ peaks, which split by strain due to lattice mismatch between substrate and epilayer, were measured from the photoluminescence experiment. And we found that the residual impurities in ZnSe epilayer were concerned with Al or CI elements from the calculated binding energy of donor impurity.

• Journal of Microbiology and Biotechnology
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• v.23 no.9
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• pp.1287-1292
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• 2013

Extracellular biogenic synthesis of silver nanoparticles with various shapes using the rice bacterial blight bacterium Xanthomonas oryzae pv. oryzae BXO8 is reported. The synthesized silver nanoparticles were characterized by UV-Vis spectroscopy, powder X-ray diffractometry (XRD), scanning electron microscopy, energy dispersive X-ray spectrometry, and high-resolution transmission electron microscopy (HR-TEM). Based on the evidence of HR-TEM, the synthesized particles were found to be spherical, with anisotropic structures such as triangles and rods, with an average size of 14.86 nm. The crystalline nature of silver nanoparticles was evident from the bright circular spots in the SAED pattern, clear lattice fringes in the high-resolution TEM images, and peaks in the XRD pattern. The FTIR spectrum showed that biomolecules containing amide and carboxylate groups are involved in the reduction and stabilization of the silver nanoparticles. Using such a biological method for the synthesis of silver nanoparticles is a simple, viable, cost-effective, and environmentally friendly process, which can be used in antimicrobial therapy.

• Journal of Welding and Joining
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• v.20 no.2
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• pp.50-58
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• 2002

Residual stress is generated in the structures as a result of irregular elastic-plastic deformation during fabrication processes such as welding, heat treatment, and mechanical processing. There are several factors attributed to the origin of residual stresses, tensile or compressive. The stresses can be determined by destructive ways or nondestructive ways using X-ray or neutron diffraction. Although X-ray diffraction is a well established technique, it is practically limited to near-surface stresses. Neutrons penetrate easily into most materials and neutron diffraction permits non-destructive evaluation of lattice strain within the bulk of large specimens because the radiation is more deeply penetrating for metallic engineering components. This paper presented application of neutron diffraction technique to the residual stress measurement using 20 mm thick welded stainless steel plate($100{\times}100 \textrm{mm}^2$)

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.470-475
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• 1999

ZnS and ZnTe epilayers were grown on GaAs(100) GaP(100) substrates by hot-wall eitaxy. X-ray diffraction revealed that the epilayers have zinc-blende structure and were grown in (100) direction. The small values of the full width at half maximum (FWHM) of double crystal rocking curve (DCRC) showed high quality of the epilayers. From the thickness dependence of the FWHM of DCRC, the strain remaining in films is found to be due to the thermal expansion difference as well as due to the lattice mismatch.

• Proceedings of the Korean Geotechical Society Conference
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• 2001.03a
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• pp.563-570
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• 2001

In this study, the charactersistics of horizontal drains used to stabilize the dredged fill are investigated experimentally by doing tensile strength test, discharge capacity test, and filter clogging test. The types of the drains selected for the study are filament type (Tyre-E), embossed type(Type-P) and heat bonded cubic type with the thickness 10mm(Type-010) and 5mm(Type-05). The results of tensile strength and discharge capacity test show that the performance of drain Type-O10 was better than the other drains. This is caused by the fact that the lattice shape core of drain Type-O10 has strong rigidity and minimizes the loss of the sectional area of discharge with increased confining pressure. Analyzing the compatibility of filters by the results of the strength characteristics test and clogging test, the filter of filament type drain produced with polyester clothed polyamide performed well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.208-211
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• 2002

$Bi_2Sr_2CuO_x$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.