• The Transactions of the Korean Institute of Electrical Engineers C
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• 제48권12호
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• pp.755-760
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• 1999

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

• Proceedings of the Korean Society For Composite Materials Conference
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• 한국복합재료학회 2005년도 추계학술발표대회 논문집
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• pp.173-178
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• 2005

In this paper, an efficient and robust analysis system for the flutter optimization of laminated composite wings has been developed using the coupled computational method based on the genetic algorithm. General three-dimensional doublet-lattice method is efficiently used to compute generalized aerodynamic forces of T-tail configuration in the frequency domain. Structural dynamic analyses of laminated composite T-tail models are conducted using finite clement method. The classical P-k flutter analysis technique is applied to effectively solve the aeroelastic governing equations in the frequency domain. Optimum design studies using genetic algorithm have been conducted in order to obtain maximum flutter stability of a composite T-tail configuration. The results show that flutter stability can be significantly increased using composite materials with proper optimum design concepts even for the same weight and shape condition. In the view point of engineering design, it is also importantly shown that the optimization of the vertical wing part is highly effective comparing to the optimization of horizontal wing part.

• Applied Microscopy
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• 제41권3호
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• pp.215-222
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• 2011

We discuss the experimental procedure for extracting reliable phase information from a defocus series of transmission electron microscopy (TEM) dark-field images using the transport of intensity equation (TIE). Taking InGaN/GaN multi-quantum well light-emitting diode as a model system, various factors affecting the final result of reconstructed phase such as TEM sample preparation, TEM imaging condition, image alignment, the correction of defocus values and the use of high frequency pass filter are evaluated. The obtained phase of wave function was converted to the geometric phase of the corresponding lattice planes, which was then used for the two-dimensional mapping of lattice strain following the dark-field inline holography (DIH) routine. The strain map obtained by DIH after optimized image processing is compared with that obtained by the geometric phase analysis of high resolution TEM (HRTEM) image, manifesting that DIH yields more accurate and reliable strain information than HRTEM-based GPA.

• Journal of Magnetics
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• 제14권1호
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• pp.7-10
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• 2009

In this work, we studied the effects of Sn addition on the ordering temperature of FePt thin film. The coercivity of FePtSn film was about 1000 Oe greater than the coercivity of FePt film for an annealing temperature of $600^{\circ}C$. Therefore, Sn addition was effective in promoting the $L1_0$ ordering and in reducing the ordering temperature of the FePt film. From our X-ray diffraction results, we found that in the as-deposited film, the addition of Sn induced a lattice expansion in disordered FePt thin films. After the annealing process, the excess Sn diffuses out from the ordered FePt thin film because of the difference in the solid solubility of Sn between the disordered and ordered phases. The existence of precipitates of Sn from the FePt lattice was deduced by Curie temperature measurements of the FePt and FePtSn films. Therefore, the key role played by the addition of Sn to the FePt film can be explained by a reduction in the activation energy for the $L1_0$ order-disorder transformation of FePt which originates from the high internal stress in the disordered phase induced by the supersaturated Sn atoms.

• Korean Journal of Materials Research
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• 제13권8호
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• Proceedings of the Korean Magnestics Society Conference
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.73.2-73.2
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• 2007

• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Journal of the Korean Society for Advanced Composite Structures
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• 제2권3호
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• pp.1-11
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• 2011

The typical truss-lattice material successively packed by repeated cubic symmetric unit cells consists of sub-elements (SE) proposed in this study. The representative continuum model for this truss-lattice material such as the effective strain and stress relationship can be formulated by the homogenization procedure based on the notation of averaged mechanical properties. The volume fractions of micro-scale struts have a significant influence on the effective strength as well as the relative density in the lattice plate with replicable unit cell structures. Most of the strength contribution in the lattice material is induced by axial stiffness under uniform stretching or compression responses. Therefore, continuum based constitutive models composed of homogenized member stiffness include these mechanical characteristics with respect to strength, internal stress state, material density based on the volume fraction and even failure modes. It can be also recognized that the stress state of micro-scale struts is directly associated with the continuum constitutive model. The plastic flow at the micro-scale stress can extend the envelope of the analytical stress function on the surface of macro-scale stress derived from homogenized constitutive equations. The main focus of this study is to investigate the basic topology of unit cell structures with the cubic symmetric system and to formulate the plastic models to predict pressure dependent macro-scale stress surface functions.

• Applied Microscopy
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• 제32권1호
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• pp.31-37
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• 2002

As-cast microstructure of Mg-rich $Mg_{68}Zn_{28}Y_4$ has been investigated by a detailed transmission electron microscopy. The as-cast $Mg_{68}Zn_{28}Y_4$ alloy consisted of three different types of phases: $10{\sim}20{\mu}m$ size primary solidification phase, dendritic phase grown from the primary phase and a eutectic structure formed at the later stage of solidification. The primary solidification phase has an icosahedral structure with a large degree of phason strain. 1/1 rhombohedral approximant phase with lattice parameters: $a=27.2{\AA}\;and\;{\alpha}=63.43^{\circ}$ is first observed in Mg-Zn-Y system. The rhombohedral structure can be obtained by introducing phason strain in the six dimensional face centered hyper-cubic lattice. The decagonal phase nucleates with orientation relationship with the icosahedral phase, and $Mg_4Zn_7$ nucleates with orientation relationship with the decagonal phase, indicating a close structural similarity between the three phases. Gradual depletion of Y during solidification plays an important role in heterogeneous nucleation of decagonal and $Mg_4Zn_7$ phases from icosahedral and decagonal phases respectively.

• Progress in Superconductivity and Cryogenics
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• 제21권3호
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• pp.13-17
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• 2019

We investigate the effect of thermal annealing on $MgB_2$ thin films with thicknesses of 400 and 800 nm, irradiated by 350 keV C-ions with a dose of $1{\times}10^{15}atoms/cm^2$. Irradiation by low-energy C-ions produces atomic lattice displacement in $MgB_2$ thin films, improving magnetic field performance of critical current density ($J_c$) while reducing the superconducting transition temperature ($T_c$). Interestingly, the lattice displacement and the $T_c$ are gradually restored to the original values with increasing thermal annealing temperature. In addition, the magnetic field dependence of $J_c$ also returns to that of the pristine state together with the restoration of $T_c$. Because $J_c$(H) is sensitive to the type and density of the disorder, i.e. vortex pinning, the recovery of $J_c$(H) in irradiated $MgB_2$ thin films by thermal annealing indicates that low-energy C-ion irradiation on $MgB_2$ thin films primarily causes lattice displacement. These results provide new insights into the application of low-energy irradiation in strategically engineering critical properties of superconductors.