• 한국경영과학회:학술대회논문집
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• 대한산업공학회/한국경영과학회 2006년도 춘계공동학술대회 논문집
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• pp.1198-1206
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• 2006

프로그램 소스코드 표절 검사에 대한 기존 방법은 크게 지문(finger-print)법과 구조기반 검사법으로 나뉘며, 주로 단어의 유사성이나 발생빈도를 사용하거나 소스코드 구조상의 특징으로 두 소스간의 유사성을 비교한다. 본 연구에서는 프로그래밍 언어의 예약어 시퀀스를 사용하여 소스코드들 간의 유사성을 비교하고, 이 결과를 FCA(Formal Concept Analysis)를 통해 해석하고 시각화 하는 방법을 제시한다. 일반적인 VSM(Vector Space Model)과 같은 단일 단어 분석으로는 단어의 인접성을 구분할 수 없으므로 단어의 시퀀스 분석이 가능하도록 알고리즘을 구성하였으며 이러한 방식은 지문법의 단점인 소스코드의 부분적인 표절 탐지의 난점을 해결할 수 있고 함수의 호출 순서나 수행 순서에 상관없이 표절을 탐지할 수 있는 장점을 가진다. 마지막으로 유사도 측정결과는 FCA를 이용하여 격자(lattice)로 시각화됨으로써 이용자의 이해도를 높일 수 있다.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2005년도 후기학술대회논문집
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• pp.248-249
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• 2005

In this paper, flowfield and acoustic-field around moving bodies are simulated by the Arbitrary Lagrangian Eulerian (ALE) formulation in FDLBM. The effect of the ALE is checked by comparing flow about a square cylinder in ALE formulation and that in the fixed coordinates, and the results show good agreement. Matching procedure between the moving grid and fixed grid is also considered. The applied method in which the both grids are connected through buffer zone is shown to be superior to moving overlapped grid. Dipole-like emissions of sound wave from harmonically vibrating bodies in 2- and 3-dimensional cases are simulated.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(3)
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• pp.37-40
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• 2000

A fast method of Hangul address word verification is presented in this Paper. Pre-segmentation and recognition by DP matching is adopted in this paper. An address line image is over-segmented by analyzing the topology of connected components and the projection profile. A fast individual Hangul character verifier was developed by applying SVM (Support Vector Machine). The segmentation hypothesis was represented by lattice structure, and a best path search by dynamic programming generates the most probable segmentation path and the final verification score. The word verifier was tested on 310 address image DB, and it show the possibility of improvements of this method.

• 한국자기학회지
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• 제5권5호
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• pp.470-473
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• 1995

We have constructed an apparatus for in sity measurement of stress of the film prepared by sputtering using an optical noncontact displacement detector. A Change of the gap distance between the detector and the substrate, caused by stress of a deposited film, was detected by a corresponding change of the reflectivity. The sensitivity of the displacement detector was $5.9\;{\mu}V/{\AA}$ and thus, it was turned out to be good enough to detect stress caused by deposition of a monoatomic layer. The apparatus was applied to in situ stress measurements of Co/X(X=Pd or Pt) multilayer thin films prepared on the glass substrates by dc magnetron sputtering. At the very beginning of the deposition, both Co and X sublayers have subjected to their own intrinsic stresses. However, when the film was thicker than about $100{\AA}$, constant tensile stress in the Co sublayer and compressive stress in the X sublayer were observed, which is believed to be related to a lattice mismatch between the matching planes of Co and X.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.29-29
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• 1999

The synthesis of layered structures on the nanometer scale has become essential for continued improvements in the operation of various electronic and magnetic devices. Abrupt metal-metal interfaces are desired for applications ranging from metallization in semiconductor devices to fabrication of magnetoresistive tunnel junctions for read heads on magnetic disk drives. In particular, characterizing the interface structure between various transition metals (TM) and aluminum is desirable. We have used the techniques of MeV ion backscattering and channeling (HEIS), x-ray photoemission (ZPS), x-ray photoelectron diffraction(XPD), low-energy ion scattering (LEIS), and low-energy electron diffraction(LEED), together with computer simulations using embedded atom potentials, to study solid-solid interface structure for thin films of Ni, Fe, Co, Pd, Ti, and Ag on Al(001), Al(110) and Al(111) surfaces. Considerations of lattice matching, surface energies, or compound formation energies alone do not adequately predict our result, We find that those metals with metallic radii smaller than Al(e.g. Ni, Fe, Co, Pd) tend to form alloys at the TM-Al interface, while those atoms with larger atomic radii(e.g. Ti, Ag) form epitaxial overlayers. Thus we are led to consider models in which the strain energy associated with alloy formation becomes a kinetic barrier to alloying. Furthermore, we observe the formation of metastable fcc Ti up to a critical thickness of 5 monolayers on Al(001) and Al(110). For Ag films we observe arbitrarily thick epitaxial growth exceeding 30 monolayers with some Al alloying at the interface, possible driven by interface strain relief. Typical examples of these interface structures will be discussed.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2009년도 춘계학술발표대회
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• pp.216-219
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• 2009

3 차원 콘텐트를 이용한 물리기반 시뮬레이션은 최근 컴퓨터 그래픽스 분야에서 가장 활발히 연구되는 연구 중 하나이다. 이와 더불어 이러한 기술들과 사용자간의 몰입감을 증가시키는 상호작용 기술 역시 계속하여 증가하는 추세이다. 본 연구는 이러한 추세에 발맞추어 물리기반 형상변형 기술의 몰입감을 증가시키기 위한 상호작용 방법을 제안한다. 제안된 방법에서는 3 차원 객체와 사용자와의 효율적인 상호작용을 위해서 시스템을 증강현실 환경에서 구현하였다. 증강현실을 이용한 시스템의 제약조건은 실시간 계산이다. 때문에, 제안된 시스템은 RBF(Radial Basis Function) [1] 와 LSM (Lattice Shape Matching) [2, 3] 방법을 조합하여 물리기반 상호작용 기술을 완성 하였고 실험을 통해 실시간 계산을 확인하였다. 또한, 3 차원 객체가 충돌하여 변형이 일어날 때 감각형 객체 (Tangible object)에 진동을 주어 물리기반 형상변형의 사용자 상호작용에 관한 몰입감을 증가시켰다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.120-120
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• 2008

We demonstrate epitaxial growth of ZnO thin films on 4H-SiC(0001) substrates using pulsed laser deposition (PLD). ZnO and SiC have attracted attention for their special material properties as wide band gap semiconductors. Especially, ZnO could be applied to optoelectronic applications such as light emitting devices and photo detectors due to its direct wide bandgap (Eg) of ~3.37eV and large exciton binding energy of ~60meV. SiC shows a good lattice matching to ZnO compared with other commonly used substrates and in this regard SiC is a good candidate as a substrate for ZnO. In this work, ZnO thin films were grown on 4H-SiC(0001) substrates by PLD using an Nd:YAG laser with a 355nm wavelength. The crystalline properties of the films were evaluated by x-ray diffraction (XRD) $\theta-2\theta$, rocking curve and pole figure measurements using a high-resolution diffractometer. The surface morphology of the films was studied by atomic force microscopy (AFM).

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.315-317
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• 2000

A magnetoplumbite type of Ba ferrite(BaM) layers were deposited on Pt(111) and Pt(200) layers, and their c-axis orientation and magnetic characteristics were compared each other. The as-deposited BaM layer on Pt(111) one at the substrate temperature $T_s$ above $500^{\circ}C$ revealed remarkable c-axis orientation. The saturation magnetization 4$\piM_s$ and the perpendicular coercivity $H_{c⊥}$ of the films as-deposited at $T_s$ of $600^{\circ}C$ were 4.0kG and 2.5kOe, respectively. On the other hand, BaM ferrite layer deposited on Pt(200) layer at $T_s$ as relatively low as $500^{\circ}C$ also revealed weak c-axis orientation as well as (107) one and the films as-deposited at $T_s$ of $600^{\circ}C$ exhibited 4$\piMs_{and}$ $H_{c⊥}$ of 2.8kG and 2.5kOe, respectively. It was suggested that although chemical activity of Pt surface was effective for the formation of BaM crystallites, the lattice matching was also important for obtaining BaM layer with good c-axis orientation and large perpendicular anisotropy.sotropy.

• 한국전자통신학회논문지
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• 제15권4호
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• pp.665-670
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• 2020

CIGS 박막 태양 전지의 버퍼층은 흡수층과 윈도우층 사이의 밴드정렬(band alignment)을 통해 에너지 변환 효율을 향상시킨다. ZnS는 무독성의 II-VI 반도체 화합물로서 직접천이형 광대역 밴드갭과 n형 전도성을 가지며, 높은 광투과성, 높은 굴절률 등의 우수한 전기적, 광학적 특성을 가지고 있고, 우수한 격자정합을 가지는 물질이다. 이 연구에서, RF 마그네트론 스퍼터링 방법에 의해 증착 후 급속 열처리에 의해 제작된 ZnS 버퍼층 박막의 구조적, 광학적 특성의 상관관계에 대해 고찰하였다. (111), (220), (311) 면의 섬아연광 입방정 구조를 확인할 수 있고, 상대적으로 저온에서 급속열처리를 수행한 시료에서는 (002) 면의 우르쯔광 육방정 구조가 함께 나타나는 다결정이 되었다. 고온에서 급속열처리 수행한 시료에서는 섬아연광 입방정 구조의 단결정으로 상전이 된다. 화학적 성분 분석을 통해서 Zn/S의 비율이 화학양론에 근접한 시료에서 섬아연광 입방정 구조의 단결정이 나타났음을 확인하였다 급속열처리 온도가 증가할수록 흡수단이 다소간 단파장 쪽으로 이동되고, 가시광 파장 범위에서 평균 광투과율이 증가하는 경향성을 보이며 500℃ 조건에서는 80.40%로 향상되었다.