Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
- /
- Pages.120-120
- /
- 2008
Effect of Deposition Temperature on Structural Properties of ZnO Thin Films on 4H-SiC Substrate
4H-SiC 기판 위에 성장된 ZnO 박막의 온도에 따른 구조적 특성 분석
-
Kim, Ji-Hong
(Korea Univ.) ;
- Cho, Dae-Hyung (Korea Univ.) ;
- Moon, Byung-Moo (Korea Univ.) ;
- Bahng, Wook (KERI) ;
-
Kim, Sang-Cheol
(KERI) ;
-
Kim, Nam-Kyun
(KERI) ;
-
Koo, Sang-Mo
(Kwangwoon Univ.)
-
김지홍
(고려대학교) ;
- 조대형 (고려대학교) ;
- 문병무 (고려대학교) ;
- 방욱 (한국전기연구원) ;
-
김상철
(한국전기연구원) ;
-
김남균
(한국전기연구원) ;
-
구상모
(광운대학교)
- Published : 2008.11.06
Abstract
We demonstrate epitaxial growth of ZnO thin films on 4H-SiC(0001) substrates using pulsed laser deposition (PLD). ZnO and SiC have attracted attention for their special material properties as wide band gap semiconductors. Especially, ZnO could be applied to optoelectronic applications such as light emitting devices and photo detectors due to its direct wide bandgap (Eg) of ~3.37eV and large exciton binding energy of ~60meV. SiC shows a good lattice matching to ZnO compared with other commonly used substrates and in this regard SiC is a good candidate as a substrate for ZnO. In this work, ZnO thin films were grown on 4H-SiC(0001) substrates by PLD using an Nd:YAG laser with a 355nm wavelength. The crystalline properties of the films were evaluated by x-ray diffraction (XRD)