• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.413-422
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• 2003

We have calculated the power extraction efficiency and the lasing wavelength distribution of index-coupled DFB lasers at threshold for various kL and facet reflectivity combinations, and compared with those above-threshold. The power extraction efficiency increases as the asymmetry of the facet reflectivities increases. The power extraction efficiency above-threshold is slightly larger than that at threshold. Since the relative photon density around the center region increases as kL increases, the power extraction efficiency decreases. The uniformity of the distribution of lasing wavelength over the stop band increases due to the relief of mode degeneracy as the asymmetry of the facet reflectivities increases. In the case of AR-HR combination, the lasing wavelength distributions at threshold are similar to those above-threshold. However, in the case of AR-AR combination, the lasing wavelength at threshold is concentrated on both edges of the stop band, while it is concentrated only on the longer wavelength edge above-threshold. As kL increases, the range of the lasing wavelength distribution increases due to the increase of the stop band. The effect of AR reflectivity on the power extraction and the lasing wavelength distribution is very weak.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.129-130
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• 2007

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.41-47
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• 2009

We report the spectral characteristics of Multimode Interferometer (MMI)-coupled semicondoctor square ring resonators. The epitaxial layers of the proposed semiconductor ring resonator consists of $1.55{\mu}m$ GaInAsP-InP multiple quantum wells. The lasing characteristics were observed by varying the structure parameters of the MMI-coupled square ring resonators. It is concluded that the MMI-coupled scheme selects a single spectral lasing mode in the double square ring cavities.

• Korean Journal of Optics and Photonics
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• v.20 no.6
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• pp.339-345
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• 2009

The high power and single mode vertical cavity surface emitting laser(VCSEL)s with photonic crystal structures have been proposed and fabricated by reducing substantially the hole numbers used in the photonic crystal structures. It is found that only six holes enable VCSELs to operate a single mode and the reliability can be enhanced by filling the holes with polyimide. The single mode lasing characteristics were analyzed by varying the oxide aperture and the hole diameter in photonic crystal structures. As a result, the single mode lasing can be stably obtained in the photonic crystal vertical cavity surface emitting lasers.

• Journal of Oral Medicine and Pain
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• v.20 no.2
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• pp.327-334
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• 1995

In order to observe the influence of pulsed Nd:YAG laser at its out-of-contact with dentin on tooth temperature, we have applied pulsed Nd:YAG laser to 2mm thick dentin sample at a point of contact and from a distance of 1mm, 2mm, 3mm and 4mm with an energy of 0.3W, 0.5W, 0.8W, 1.5W and 2.0W. They were exposed to periods of 3 seconds, 6 seconds, 9 seconds and 15 seconds respectively and measured temperature changes. The results as follows : 1. When the time ad intensity of power were constant, the temperature changes on dentin of tooth depended on the distance. The temperature increased when the laser intensity increased bu two other conditions were contact. 2. At the point of contact, the temperature has risen over $5^{\circ}C$ regrdless of intensity of the power or the time. However, there was $5^{\circ}C$ fluctuation with 0.3 W for 3 seconds treatment. 3. The temperature change was less than $5^{\circ}C$ thermal change at the distance of 1mm and 2mm respectively when lased for 3 seconds, 6 seconds, 12 seconds and 15 seconds with 0.3 W. Similar results were observed at 3 and 6 seconds treatment with 0.5 W and at 3 seconds treatment with 0.8 and 1.0W respectively. 4. It showed less than 5(C thermal change when lased for 3 seconds, 6 seconds, 9 seconds, 12 seconds and 15 seconds with 0.3W at the distance of 3mm and 4mm. The same results were seen in 3 seconds, 6 seconds and 9 seconds treatment with 0.5W and in 3 seconds with 0.8W and 1.0W respectively. As we have seen the above, the results has indicated that pulsed Nd:YAG lasing at its off contact on dentin of 2mm thickness will not cause irreversible changes if lasing intensity, lasing distance and lasing time are appropriate.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.72-75
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• 1985

1.3$\mu$m double-heterostructure GaInAsP/InP wafers have been grown by LPE and broad contact laser diodes have been fabricated. Electrical and optical characteristics of these lasers under pulsed lasing operation at room temperature are described. Typical threshold currents are below 2 Amp. corresponding to threshold current densities of 3 - 6 KAmp./$\textrm{cm}^2$ and peak lasing wavelength is shown to be at 1.315 $\mu$m.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.377-381
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• 2014

Coupled guided modes, proposed in various modified hollow hexagonal cavities each attached internally to a hexagon, were demonstrated by investigating the laser oscillations in semiconductor cavities. The mode spacing between two adjacent lasing peaks decreased as the size of the internal hexagon increased, due to the increased round-trip length of the coupled guided modes. The linear dependency of the inverse mode spacing to the calculated round-trip length strongly confirmed the lasing of the coupled guided modes. The proposed modes in common-sized external cavities showed resonance structure that could be adjusted widely by controlling the size of the internal hexagon.

• Journal of the Optical Society of Korea
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• v.16 no.2
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• pp.157-161
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• 2012

This work reports the stability of the resonant characteristics in multimode interferometer coupled square ring semiconductor cavities. Based on the analysis of single square ring cavities, the single mode operations in the multimode interferometer coupled ring cavities are analyzed and the devices are demonstrated on the semiconductor multiple quantum well epitaxial structure. By varying the lasing conditions such as substrate temperature and input pump power, single resonant mode operations are also observed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.55-60
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• 2006

In order to suppress lasing oscillation and obtain high light power, We have proposed a novel SLD which is formed with a straight and tilted waveguide. The window region is used to suppress lasing oscillation and reduce the facet reflectivity. High power and low reflectivity is obtained by the straight and tilted waveguide. Based on the theoretical analysis, we have fabricated the SLD with the waveguide of 500 $\mu$m length and window region of 50 $\mu$m by LPE equipment. Through the measurements of optical characteristics, the output light power of 3 mW was obtained at the 150 mA CW injection current and 25$^{circ}C$. We have confirmed that the proposed SLD has a 0.8 dB spectrum ripple lower than 1 dB which is sufficiently low reflectivity for preventing lasing.

• ETRI Journal
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• v.26 no.5
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• pp.475-480
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• 2004

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.