• Journal of the Korean Society of Manufacturing Process Engineers
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• v.6 no.3
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• pp.16-23
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• 2007

An experimental investigation with diode laser system was carried out to study the effect of surface heat treatment on the die materials(SM45C, SKD11, SK3). The surface heat treatment characteristics of the laser beam are evaluated using hardness tests, optical microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy(EDS). Results indicated that the beam size, focal length, feed rates are changed surface hardened characteristics. SM45C is higher hardness than other materials and composed to martensite grain at hardened zone, whereas other materials(SKD11, SK3)are low hardness than expected and composed to austenite and allayed martensite at hardened zone. The intensive X-ray diffraction patterns of (110)-(200)-(211) is detected hardened surface and the hardened surface distributed plenty of carbon density than metal zone.

• Journal of Environmental Health Sciences
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• v.24 no.2
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• pp.145-150
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• 1998

This study was carried out to investigate the loss amount of collection at the different of precipitatation time, high voltage and gas speed. This work has focused on the dependence of the collection efficiency in the collector zone with gas speed and high voltage. This advanced Model is developed by research of the different parameter as the conventionnal modem of study. In order to investigate collection efficiency of electrostatic precipitator, the loss amount of knocking was measured with Monitek-Treubung and the particle size was analyzed by He-Ne laser diffraction spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.551-557
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with the without the presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor plume plasma expending into th ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The nitrogen content of the films was found to increase drastically with an increase of nitrogen pressure. The surface morphology of the films was studied using a scanning electron microscopy. Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtained films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.240-243
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.1
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• pp.58-63
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• 2005

PTFE (polytetrafluoroethylene) thin films were prepared from the pellets of the graphite doped PTFE via pulsed laser ablation with 1064 nm Nd:YAG laser. The graphite powder converts the absorbed photon energy into thermal energy which is transmitted to nearby PTFE. The PTFE is decomposed by thermal process. The deposited films were transparent and crystalline. SEM (scanning electron microscopy) and AFM (atomic force microscopy) analyses indicated that the film surface morphology changed to fibrous structure with increasing thickness. The fluorine to carbon ratios of the film were 1.7 and molecular axis was parallel with (100) Si-wafer substrate. These results obtained by XPS (X-ray photoelectron spectroscopy), FTIR (fourier transform infrared spectroscopy) and XRD (X-ray diffraction).

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.29-33
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• 2002

A procedure was developed for preparing bulk carbon nitride crystals from a polymeric $\alpha$ -C$_3$N$\_$4.2/ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma combined with pulsed laser ablation of graphite target. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and x-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrate that the nitrogen composition in $\alpha$ -C$_3$N$\_$4.2/ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~45%. The thermobaric experiments were performed at 10-77 kbar and 350-1200 $\^{C}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.835-844
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• 2001

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.76-79
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• 2012

$Tb_3Al_5O_{12}:Ce$ (TAG:Ce) thin films were successfully deposited by a pulsed laser ablation method on a quartz substrate, and low-temperature post-annealing effects on luminescent properties were investigated in detail. TAG:Ce thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The as-deposited films were amorphous, and post-annealing above $700^{\circ}C$ was required for crystallization. The post-annealed TAG:Ce thin films showed strong and broad emission bands around 542 nm and excitations at 451 nm, which all corresponded to transitions between the 4f ground level to the $5d^1$ excited levels of Ce ion.