Journal of the Optical Society of Korea

Optical Society of Korea (한국광학회)
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Thin Film Deposition of Tb3Al5O12:Ce by Pulsed Laser Ablation and Effects of Low-temperature Post-annealing

  • Kim, Kang Min (The Institute of Scientific and Industrial Research, Osaka University) ;
  • Chung, Jun Ho (Department of Materials Science and Engineering, Hanyang University) ;
  • Ryu, Jeong Ho (Department of Materials Science and Engineering, Korea National University of Transportation)
  • Received : 2012.01.06
  • Accepted : 2012.01.30
  • Published : 2012.03.25
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Abstract

$Tb_3Al_5O_{12}:Ce$ (TAG:Ce) thin films were successfully deposited by a pulsed laser ablation method on a quartz substrate, and low-temperature post-annealing effects on luminescent properties were investigated in detail. TAG:Ce thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The as-deposited films were amorphous, and post-annealing above $700^{\circ}C$ was required for crystallization. The post-annealed TAG:Ce thin films showed strong and broad emission bands around 542 nm and excitations at 451 nm, which all corresponded to transitions between the 4f ground level to the $5d^1$ excited levels of Ce ion.

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