• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.11-16
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• 1999

Discharge characteristics research for high voltage and large current electric machinery design, the development of ozonizer with high yield and efficiency for environment improvement, generation of plasma & laser and EMI EMC are research fields of Enersy & Environment Electromagnetic Laboratory(EEEL) in the school of electrical & electronic engineering of Yeungnam University. On this paper, we would like to introduce the discharge and ozone generation characteristics of ozonizers designed and manufactured by EEEL. After starting research for fluid gas discharge characteristics early in the 1980's, high voltage nozzle(HVN) type ozonizer, neon lamp(Nelamp) type ozonizer, ozone lamp(Olamp) type ozonizer and multi-discharge type ozonizer(MDO) have been investigated since 1990.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.14
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• pp.5589-5594
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• 2015

Cystitis and proctitis are defined as inflammation of bladder and rectum respectively. Haemorrhagic cystitis is the most severe clinical manifestation of radiation and chemical cystitis. Radiation proctitis and cystitis are major complications following radiotherapy. Prevention of radiation-induced haemorrhagic cystitis has been investigated using various oral agents with minimal benefit. Bladder irrigation remains the most frequently adopted modality followed by intra-vesical instillation of alum or formalin. In intractable cases, surgical intervention is required in the form of diversion ureterostomy or cystectomy. Proctitis is more common in even low dose ranges but is self-limiting and improves on treatment interruption. However, treatment of radiation proctitis is broadly non-invasive or invasive. Non-invasive treatment consists of non-steroid anti-inflammatory drugs (NSAIDs), anti-oxidants, sucralfate, short chain fatty acids and hyperbaric oxygen. Invasive treatment consists of ablative procedures like formalin application, endoscopic YAG laser coagulation or argon plasma coagulation and surgery as a last resort.

• Journal of the Korean institute of surface engineering
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• v.47 no.1
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.258-258
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• 2011

최근 유연 기판을 이용한 태양전지 및 TFT 등 전자소자 개발에 관한 연구가 주목받고 있다. 본 연구에서는 공정 시 유리한 유리기판상 전자소자 제작 후 폴리이미드막 박리를 통한 유연전자 소자 구현을 목적으로 한다. 폴리이미드막 박리를 목적으로 희생층으로서 a-Si:H을 사용하였다. 유리기판상에 60 nm 두께의 a-Si : H을 ICP (Induced coupled plasma) 공정으로 증착한 후 a-Si : H층 상부에 30 ${\mu}m$ 두께로 폴리이미드를 코팅하여 Hot plate와 furnace에서 열처리를 거쳤다. 이후 각기 다른 파장을 갖는 레이저의 파워를 가변하며 유리 기판 후면에 조사하였다. 실험 결과 355 nm UV 레이저로 가공한 경우 희생층으로 사용 된 a-Si : H층 내에 존재하는 수소가 레이저 빛 에너지에 의해 결합이 끊어지면서 유리기판과 폴리이미드막이 분리됨을 확인하였다.

• Design & Manufacturing
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• v.2 no.2
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• pp.20-24
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• 2008

Recently, the study for production technology is focused on cycle time reduction as various products are manufactured. In order to manufacture tool and die, rapid prototyping and rapid tooling are researched. Stereolithography apparatus, selective laser sintering, 3D printing, laminated object manufacturing are developed in rapid prototype. The purpose of this study is to develop rapid tooling technology using thermal spray process. This technology is not well-known to korea, but this study will be contributed in development of domestic molds industry through continuous research and development.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.269-271
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• 2005

Using optimized sputtering condition of a-Si and $SiO_2$ thin film, we can obtained the large grained poly-Si film on PES substrate. The gate dielectric grown by plasma enhanced atomic layer deposition, laser activation and organic interlayer dielectric material make TFTs on PES possible with mobility of $11cm^2/Vs$ (nMOS) and $7cm_2/Vs$ (pMOS).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.496-498
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• 2005

We reported that high dielectric hafnium oxide nano-film deposited by thermal atomic layer deposition on the poly-silicon film (poly-Si). The poly -Si film was produced by plasma enhanced chemical vapor deposition and excimer laser annealing. We used the hafniu m chloride ($HfCl_4$) and water as the precursors and analyzed the hafnium oxide film by transmission electron microscope and secondary ion mass spectrometer. Hafnium oxide produced by the ALD method showed very good coverage on the rough surface of poly-Si film. While deposited with 200 cycles, these hafnium oxide films revealed a relatively smooth surface and good uniformity, but the cumulative roughness produced by the incomplete reaction was apparent when the amount of deposition cycle increased to 600 cycles.

• Journal of the Korean institute of surface engineering
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• v.24 no.2
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• pp.67-72
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• 1991

The feasibility of preparing superconducting $Y_1Ba_2Cu_3O_y$ films on metallic substrate was exmined in an attempt to fabricate a tape conductor. Deposition methods employed were sputtering, laser ablation, and plasma flash evaporation. Although zero resistance temperature (Tc) is achieved above 90 K, critical current density values (Jc) obtained so far is still low as compared with those reported in the films grown on single crystal substrates. This may be caused by the misalignment of the crystal structure of the films on metal substrates. A further improvement if Jc for highly-oriented polycrystalling films is being investigated at the present time.

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.331-332
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• 2008

• Bulletin of the Korean Chemical Society
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• v.34 no.8
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• pp.2539-2542
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• 2013