• Title/Summary/Keyword: Laser Patterning

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The Study of Micro Fabrication using Picosecond Laser Ablation (피코초 레이저 어블레이션을 이용한 미세 가공 연구)

  • Noh, Ji-Whan;Sohn, Hyon-Kee;Suh, Jeong;Lee, Jae-Hoon
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.2
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    • pp.25-28
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    • 2010
  • The micro fabrication on the mold material using picosecond laser ablation processing has been studied. We used the two kind of system with picosecond laser. First one is two mirror type scanner and telecentric f-theta lens. Second one is X-Y stage and objective lens. By using these system, the $100{\mu}m$ size chess patterning and $2{\mu}m$ size patterning was fabricated. Especially $2{\mu}m$ size patterning on the mold material can be used as the decorative rainbow color logo for industrial field. In this paper, it is proved the picosecond laser is effective tool for the laser ablation processing.

A Study on Tribology Characteristics of Laser Patterned DLC Thin Films (Laser patterning된 DLC 박막의 Tribology 특성연구)

  • Lee, Ji Seok;Kim, Dong Jun;Shin, Dong Chul;Kim, Tae Gyu
    • Journal of the Korean Society for Heat Treatment
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    • v.33 no.1
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    • pp.25-32
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    • 2020
  • In this study, the tribology of laser patterned DLC thin film was studied. DLC thin films were coated by RF-PECVD to improve the durability of tungsten carbide (WC) materials. DLC thin films have high hardness and low friction characteristics. Dot and line patterning was processed on the surface of DLC thin film with femtosecond laser, and the coefficient of friction was improved. As a result of ball on disk abrasion test, the hardness and friction coefficient of DLC thin films were much better than that of WC material. The friction coefficient of DLC thin film with dot patterning and line patterning showed better results. The excellent performance of the laser patterned DLC coating is appeared to reduce the coefficient of friction due to the reduction of surface contact area.

Laser patterning process for a-Si:H single junction module fabrication (레이저 가공에 의한 비정질 실리콘 박막 태양전지 모듈 제조)

  • Lee, Hae-Seok;Eo, Young-Joo;Lee, Heon-Min;Lee, Don-Hee
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.11a
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    • pp.281-284
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    • 2007
  • Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

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Femtosecond Laser Lithography for Maskless PR Patterning (펨토초 레이저를 이용한 미세 PR 패터닝)

  • Sohn, Ik-Bu;Ko, Myeong-Jin;Kim, Young Seop;Noh, Young-Chul
    • Journal of the Korean Society for Precision Engineering
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    • v.26 no.6
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    • pp.36-40
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    • 2009
  • Development of maskless lithography techniques can provide a potential solution for the photomask cost issue. Furthermore, it could open a market for small scale manufacturing applications. Since femtosecond lasers have been found suitable for processing of a wide range of materials with sub-micrometer resolution, it is attractive to use this technique for maskless lithography. As a femtosecond laser has recently been developed, both of high power and high photon density are easily obtained. The high photon density results in photopolymerization of photoresist whose absorption spectrum is shorter than that of the femtosecond laser. The maskless lithography using the two-photon absorption (TPA) makes micro structures. In this paper, we present a femtosecond laser direct write lithography for submicron PR patterning, which show great potential for future application.

Overlapping Rates of Laser Spots on the Laser Direct Patterning of ITO Electrode in the Double-layer Structure of Thin Film (이층 박막 구조에서 ITO 전극의 레이저 직접 패터닝 시레이저 식각 패턴 중첩 비율의 변화)

  • Wang, Jian-Xun;Park, Jung-Cheul;Kwon, Sang-Jik;Cho, Eou-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.5
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    • pp.377-380
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    • 2012
  • Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

Study on Indirect Laser Patterning for Manufacturing the Printing Roll (인쇄용 롤 제작을 위한 간접식 레이저 패터닝에 관한 연구)

  • Kang, Heeshin;Noh, Jiwhan;Suh, Jeong
    • Laser Solutions
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    • v.15 no.4
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    • pp.12-15
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    • 2012
  • On behalf of the existing semiconductor process, the electronic devices to low-cost mass production to mass print the way, the research for development of roll-to-roll printing process is actively underway. This study was performed in about the research on the manufacturing technology of the printing roll used in the printing process of electronic devices. The indirect laser imprinting technology was used to create printable roll, and after coating copper on the surface of steel and thereon after coating polymer, after removing the polymer on the surface of roll, the printable roll was made. The laser system and roll feeder system were constructed and control program was developed. We has found the optimal conditions to perform laser patterning experiments using a system developed and We can make the minimum line width of 18 ${\mu}m$.

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Laser Processing Technology in Semiconductor and Display Industry (반도체 및 디스플레이 산업에서의 레이저 가공 기술)

  • Cho, Kwang-Woo;Park, Hong-Jin
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.6
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    • pp.32-38
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    • 2010
  • Laser material processing technology is adopted in several industry as alternative process which could overcome weakness and problems of present adopted process, especially semiconductor and display industry. In semiconductor industry, laser photo lithography is doing at front-end level, and cutting, drilling, and marking technology for both wafer and EMC mold package is adopted. Laser cleaning and de-flashing are new rising technology. There are 3 kinds of main display industry which use laser technology - TFT LCD, AMOLED, Touch screen. Laser glass cutting, laser marking, laser direct patterning, laser annealing, laser repairing, laser frit sealing are major application in display industry.

Laser Direct Patterning of Photoresist Layer for Halftone Dots of Gravure Printing Roll (그라비아 인쇄물의 망점 형성을 위한 포토레지스터 코팅층의 레이저 직접 페터닝)

  • Seo, Jung;Lee, Je-Hoon;Han, Yu-Hee
    • Laser Solutions
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    • v.3 no.2
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    • pp.35-43
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    • 2000
  • Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

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Gravure Halftone Dots by Laser Direct Patterning

  • Jeong Suh;Lee, Jae-Hoon
    • International Journal of Precision Engineering and Manufacturing
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    • v.3 no.1
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    • pp.26-32
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    • 2002
  • Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

ITO Thin Film Ablation Using KrF Excimer Laser and its Characteristics

  • Lee, Kyoung-Chel;Lee, Cheon;Le, Yong-Feng
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.4
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    • pp.20-24
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    • 2000
  • This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

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