• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.466-469
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• 2006

We have developed the world's thinnest flexible electrophoretic displays (EPDs). The thin-film displays are 95 ..m thick, which is nearly the same thickness as a standard sheet of paper. Weighing 0.44g including external connection cables, these displays are also probably the world's lightest. We have also developed 7.1-inch-diagonal(paperback-sized) high-resolution flexible EPDs. The displays are large enough to be used as practical e-paper. More than 7 million transistors work correctly on plastic, enabling us to see 3-megapixel images. These flexible displays include active-matrix TFT devices that are fabricated using Suftla transfer technology. Suftla technology demonstrates the potential to achieve thin, flexible displays that will be used as an e-paper in the near future.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1451-1454
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• 2005

We report effects of inorganic binder on the emission properties of CNT paste for low cost and high low-cost and large area field emission devices or displays. Two types of photosensitive carbon nanotube (CNT) paste were formulated by using of glass frit and spin on glass (SOG) as an inorganic binder and investigated their emission properties according to inorganic binders and firing conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1466-1469
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• 2005

We report effects of electrical aging on the emission stability of carbon nanotube (CNT) paste for low cost and high low-cost and large area field emission devices or displays. Photosensitive carbon nanotube paste was formulated by using of spin on glass (SOG) as an inorganic binder and investigated emission properties and stability depending on electrical aging condition.

• Proceedings of the KIEE Conference
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• 2005.10b
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• pp.600-602
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• 2005

Recently image display devices have become large and high quality. To control the qualities of the component, measurements of the shape and thickness of a plate glass has been required. In order to measure the shape of the specular objects, Non-Contact Optical Sensor using Hologram laser unit was proposed. The sensor has a optical system that is composed of a Hologram laser and objective lens used for CD Player, and the sensor showed high performance for measuring the shape and thickness of transparent plates. In the sensor, the temperature of the sensor body is controlled by TEC(Thermoelectric Cooler). In this paper, we proposed the measuring method to make better performance of sensor using focus error signal of a hologram laser unit. It can measure the shape and the thickness of transparent objects with the s-type focus error signal which is generated by the sensor while it goes to the object.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.859-862
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• 2003

This paper proposes an emulation environment for SoC designs using small number of large gate-count FPGA's and a PC system. To overcome the pin limitation problem in partitioning the design when the design size overwhelms the FPGA gate count, we use bus splitter modules that replicate on-chip bus signals in one FPGA to arbitrary number of other FPGA's with minimal pin count. The proposed scheme is applied to the emulation of 2 million gate multimedia processing chip using two Xilinx Viretex-2 6000 FPGA devices in 6.6MHz operating frequency. An ARM core, memories, camera and LCD display are modeled in software using dual 2GHz Pentium-III processors. This scheme can be utilized for more than 2 FPGA's in the same ways as two FPGA case without losing emulation speed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.173-176
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• 2003

Microdisplay with transmissive to realize the virtual display con make the large screen with small devices, so virtual image realization technology have been developed by using 0.24" microdisplay panel. We developed microdisplay controller with using Kopin panel. microdisplay will be used in several telecommunication terminal which can transfor text message and still/moving images.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.342-344
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• 2006

During last years, large investments have been directed to development and research of nano-technological products like semiconductor, display panel, optic-fiber communication components, life technology, and ultra-precision components. All quantitative measurements at nanometre scale should guarantees accurate results and high quality. Laser interferometer is one of most famous nanometre scale devices to be able to measure metre-scale distance with nanometre scale resolution, but it is easily affected by various error causes like geometrical, instrumental and environmental factor. On the other side, capacitive sensor is robust to above error factors, but it is able to measure relatively shorter distance, under $100{\mu}m$, than laser interferometer. New error correction method for laser interferometry using capacitive sensor will be introduced in this paper.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.558-561
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• 2005

In-situ photopolymerization of alkyl acrylate monomers in the presence of a nematic fluid provides a cellular matrix of liquid crystalline droplets in which the chemical structure of the encapsulating polymer exerts control over the alignment (anchoring) of the liquid crystalline molecules. Control is obtained by variation of the alkyl side chains and through copolymerization of two dissimilar monofunctional acrylates. Two monofunctional acrylates with opposing tendencies on copolymerization provide control over the tunability of anchoring over a wide temperature range. Using various acrylates we show that a uniform vertical alignment can be achieved over a large area. Utilizing this technique and a nematic with negative dielectric anisotropy, we have fabricated highly flexible liquid crytal based devices, with high contrast and fast response time, without using any alignment layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.346-349
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• 2009

We investigated the doping effects of $ReO_3$ in different p-type organic semiconductors on the formation of charge transfer complexes and the electrical conductivity by comparing the absorption in ultraviolet-visible-nearinfrared (UV-Vis-NIR) and the current density-voltage characteristics of the hole only devices, respectively. The large energy difference between the HOMO level of host and Fermi energy level of dopant (${\Delta}E$=$E_{HOHO,host}$ - $E_{F,dopant}$) gives higher concentration of CT complexes and enhanced conductivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.242-242
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• 2012

Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.