• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.976-979
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control' writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm), To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and $0.5{\times}0.5mm^2$ area, respectively, This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolpution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.30-37
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.90.2-90.2
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• 2013

Vertically-aligned silicon nanostructure arrays (SNAs) have been drawing much attention due to their useful electrical properties, large surface area, and quantum confinement effect. SNAs are typically fabricated by chemical vapor deposition, reactive ion etching, or wet chemical etching. Recently, metal-assisted chemical etching process, which is relatively simple and cost-effective, in combination with nanosphere lithography was recently demonstrated for vertical SNA fabrication with controlled SNA diameters, lengths, and densities. However, this method exhibits limitations in terms of large-area preparation of unperiodic nanostructures and SNA geometry tuning independent of inter-structure separation. In this work, we introduced the layerby- layer deposition of polyelectrolytes for holding uniformly dispersed polystyrene beads as mask and demonstrated the fabrication of well-dispersed vertical SNAs with controlled geometric parameters on large substrates. Additionally, we present a new means of building in vitro neuronal networks using vertical nanowire arrays. Primary culture of rat hippocampal neurons were deposited on the bare and conducting polymer-coated SNAs and maintained for several weeks while their viability remains for several weeks. Combined with the recently-developed transfection method via nanowire internalization, the patterned vertical nanostructures will contribute to understanding how synaptic connectivity and site-specific perturbation will affect global neuronal network function in an extant in vitro neuronal circuit.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.5
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• pp.367-373
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• 2014

Surface texturing is a machining process on the surface to give engineering functions. The representative process of the surface texturing is lotus effect to give hydrophobic property by the lithography and chemical etching, which is the bio mimic from the nature. Surface texturing can be manufactured by a lot of processes, in particular using mechanical method such as a precise diamond turning, grinding, rolling, embossing, vibrorolling, and abrasive jet machining (AJM). Among them, the grinding process is notable in terms of the wide range of texturing area and fast processing time. The patterning by grinding is done by the grooved grinding wheel on the work piece. In this case, the pattern shape is determined by the grinding conditions as well as the wheel dressing conditions. In this paper, experimental study on the pattern shapes were done and provide the feasibility in use for the large area patterning.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.245-249
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• 2010

Two dimensional(2D) pair-photonic crystals (pair-PCs) have been fabricated by a multiple-exposure nanosphere lithography (MENSL) method using the self-assembled nanospheres as lens-mask patterns and the collimated laser beam as a multiple-exposing source. The arrays of the 2D pair-PCs exhibited variable lattice structures and shape the control of rotating angle (${\Theta}$), tilting angle (${\gamma}$) and the exposure conditions. In addition, the base period or filling factor of pair-PCs as well as their shapes could be changed by experimental conditions and nanosphere size. A 1.18-${\mu}m$-thick resist was spincoated on Si substrate and the multiple exposure was carried out at change of ${\gamma}$ and ${\Theta}$. Images of prepared 2D pair-PCs were observed by SEM. We believe that the MENSL method is a suitable useful tool to realize the pair-periodic arrays of large area.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1115-1117
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• 2009

Resist patterning of all layers in TFT and BM layer in CF were carried out using UV-imprinting Lithography to make a 12.1 inch TFT-LCD panel at the resolution of 1280 ${\times}$ 800 lines (125 ppi). Technical challenges and solutions for resist patterning by UV-imprinting are shown in this article.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.6-11
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• 2016

For high volume manufacturing using extreme ultraviolet (EUV) lithography, mask protection from contamination during lithography process must be solved, and EUV pellicle is the strongest solution. Based on the technical requirements of EUV pellicle, EUV pellicle should have large membrane area ($110{\times}140mm^2$) with film transmittance over 90% and mechanical stability. Even though pellicle that satisfies size standard with high transmittance has been reported, its mechanical stability has not been confirmed, nor is there a standard to evaluate the mechanical stability. In this study, we suggest a rather simple method evaluating mechanical stability of pellicle membrane using spin-coater which can emulate the linear accelerated motion. The test conditions were designed by simulating the acceleration distribution inside pellicle membrane through correlating the linear acceleration and centripetal acceleration, which occurs during linear movement and rotation movement, respectively. By these simulation results, we confirmed the possibility of using spin-coater to evaluate the mechanical stability of EUV pellicle.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.58-62
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• 2019

Diffractive Optical Elements(DOEs) diffracts incident light using the diffraction phenomenon of light to generate a desired diffraction image. In recent years, the use of diffraction optics, which can replace existing refractive optical elements with flat plates, has been increased by implementing various optical functions that could not be implemented in refractive optical devices and by becoming miniaturized and compacted optical elements. Direct laser lithography is typically used to effectively fabrication such a diffractive optical element in a large area with a low process cost. In this study, the process conditions for fabricating patterns of diffractive optical elements in various shapes were found using direct laser lithographic system, and optical performance evaluation was performed through fabrication.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.88.1-88.1
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• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Journal of Information Display
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• v.11 no.2
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• pp.49-51
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• 2010

Nanoimprint lithography (NIL) using ultraviolet (UV) rays is a technique in which unconventional lithographic patterns are formed on a substrate by curing a suitable liquid resist in contact with a transparent patterned mold, then releasing the freshly patterned material. Here, various solutions are introduced to achieve sufficient overlay accuracy and to overcome the technical challenges in resist patterning via UV imprinting. Moreover, resist patterning of all the layers in TFT and of the BM layer in CF was carried out using UV imprinting lithography to come up with a 12.1-inch TFT-LCD panel with a resolution of $1280{\times}800$ lines (125 ppi).