• Title/Summary/Keyword: LaAl$O_3$

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Out-of-plane twin 구조를 갖는 $LaAlO_3$기판 상의 La-Ca-Mn-O 박막 적층 성장 분석

  • 송재훈;최덕균;정형진;최원국
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.145-145
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    • 1999
  • La-Ca-Mn-O (LCMO) 박막에서 초거대 자기 저항 효과와 발견된 이후 자기 센서와 고밀도 자기 저장 매체로서 응용하기 위한 연구가 진행되고 있다. 그러나 현재 대부분의 증착은 타겟과 박막간의 조성의 일치를 위하여 PLD 방법을 이용하고 있으며 RF magnetron sputtering 법으로 증착한 예는 많이 보고되고 있지 않으며 특히 적층 성장시킨 예는 아직 보고되지 있지 않다. 또한 LCMO와의 낮은 격자 상수 불일치를 보이는 SrTiO3와 LaAlO3 기판에 LCMO 박막을 성장시킬 경우 LaAlO3의 경우 XRD rocking curve의 curve의 FWHM 값이 SrTiO3 상에 증착시킨 것의 10배 이상의 값을 보인다는 것은 주목할 만한 사실이다. RF magnetron sputtering 법을 이용하여 LaAlO3 기판상에 145nm MCMO 박막을 적층성장시켰다. XRD $ heta$-2$\theta$ scan을 통해 박막이 c-축 배향한 것을 확인할 수 있었으며 RBS 분석결과 4.98%의 minimumyield를 보였으며 이로부터 박막이 적층성장한 것을 확인할 수 있었다. LCMO (200) peak의 XRD $\theta$-rocking 결과 FWHM의 값은 0.311$^{\circ}$를 보였으나 2개의 피크가 존재하는 것을 볼 수 있었다. 따라서 기판의 (200) 피크를 XRD $\theta$-2$\theta$ scan에서 0.3$^{\circ}$ 간격으로 두 개의 피크를 관찰할 수 있었는데 이는 기판과 박막간의 stress로 인한 tetragonal distortion에 의한 것으로 알려져 있었다. 따라서 기판상에 박막이 어떤 식으로 적층 성장되었는지를 RBS를 이용하여 <001>과 <011> 방향으로 2MeV He++를 주입하여 0.1$^{\circ}$ 간격으로 틸팅을 해본 결과 <001> 방향에서는 1.12$^{\circ}$의 차이를 보였다. 이는 기판과의 compressive stress로 인해 c축 방향으로 늘어났으며 stress relaxed layer는 XRD 결과와는 달리 관찰할 수 없었다. 이러한 현상의 기판 자체의 twin 구조로 인한 것으로 생각된다. RBS 분석후 고분해능 XRD를 이용해 LCMO (200) peak의 $\theta$-rocking 결과 이제R지 laAlO3 상 증착한 LCMO의 값으로는 제일 작은 0.147$^{\circ}$를 나타내었다.

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Structural Properties of $Al_2O_3$Ceramics with impurities (불순물 첨가에 따른 $Al_2O_3$세라믹스의 구조적 특성)

  • 우원석;김지헌;임성수;박인길;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.387-390
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    • 2000
  • The $Al_2$O$_3$specimens were prepared by the conventional mixed oxide method with addition La$_2$O$_3$, Bi$_2$O$_3$. The specimens were sintered at 15$25^{\circ}C$, 5hr., in air. The structural properties of the specimens were investigated by XRD and SEM. The $Al_2$O$_3$ceramics with dopants had hexagonal structure and didn't show secondary phases. In the case of specimens with 0.25wt% La$_2$O$_3$and 0.25wt% Bi$_2$O$_3$bulk densities and lattice parameter of c/a were 3.818g/cm$^3$, 3.783g/cm$^3$and ca=2.725, c/a=2.723, respectively. The bulk densities of $Al_2$O$_3$ceramics were decreased with dopants.

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Electron Accumulation in LaAlO3/SrTiO3 Interfaces by the Broken Symmetry of Crystal Field

  • Choe, Hui-Chae;Park, Ha-Yan;Jeong, Yong-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.452-452
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    • 2011
  • Using ab initio calculations, we reveal the origins of the extraordinarily increased electric conductivity of the LaAlO3/SrTiO3 interface. In both of the two (LaAlO3)m/ SrTiO3 heterojunction models (m=3, 5), the oxygen atoms in the cells were displaced toward the n-type interface and the Ti-centered octahedron structure was compressed along the [001] direction by the atomic reconstructions at the (LaAlO3)m/(SrTiO3)4 interfaces. As a result, the 3dxy orbital of the Ti atom was preferentially occupied due to the lowered energy state of the 3dxy orbital, which arises from the crystal field asymmetry. We reason that the extra electrons occupy the 3dxy orbital are accumulated at the interface by the displacement of the oxygen atoms. This accumulation contributes to the conductivity of the n-type interface. In addition, through a comparison of the atomic displacements and charge accumulation amounts between the two thickness models (m=3, 5), the thickness-dependency of the conductivity can be explained.

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Formation and conductivity of oriented $LaNiO_3$ thin films on Si and $Al_2O_3$ substrates (Si와 $Al_2O_3$ 기판에 대한 $LaNiO_3$ 박막의 배향성 형성과 도전도)

  • Kim, Dae-Young;Park, Min-Seok;Son, Se-Mo;Lee, Myoung-Kyo;Kim, Kang-Eun;Chung, Su-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.799-802
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    • 2003
  • [ $LaNiO_3$ ](LNO) thin films were deposited on various substrates as Si and $Al_2O_3$ by sol-gel process using lanthanum nitrate and nickel acetate. The structure and orientation of the films were characterized by X-ray diffraction. The orientation factors of films on Si(100), Si(111), $SiO_2/Si(100)$ and $Al_2O_3$were 97%, 63%, 73%, and 24% respective. The conductivity was $7.6{\times}10^{-3}{\Omega}{\cdot}cm$ with 10 times coating at Si(100) substrate.

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A Measurement and Analysis of Thermoluminescence Spectra of LaAlO3 (LaAlO3에 대한 열자극발광 스펙트럼의 광학적 분석)

  • Lee, J.I.;Moon, J.H.;Kim, D.H.
    • Journal of Korean Ophthalmic Optics Society
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    • v.4 no.2
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    • pp.141-146
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    • 1999
  • We measured and analyzed thermoluminescence spectra of $LaAlO_3$, single crystal by 3 dimensional data for temperature, wavelength and luminescence intensity. $LaAlO_3$, has used as the substrates of YBCO(superconductor) or semiconductors. We could determined the energy of recombination center, that is impossible through analysis of glow curve data. We could obtained the energy through analysis of the spectrum data at peak temperature by Franck-Condon model. The total glow curve was deconvoluted to three glow curves by curve fitting method. The activation energies were 0.54eV, 0.91eV and 1.02eV respectively. The energies of recombination centers were determined with 2.04eV and 2.75eV from the analysis of luminescence intensity data for wavelength.

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Growth of La0.35Pr0.35Ca0.3MnO3/LaAlO3 Thin Film using Laser Molecular-Beam Epitaxy and its Magnetic Properties (Laser Molecular-Beam Epitaxy를 이용한 La0.35Pr0.35Ca0.3MnO3/LaAlO3 초격자 박막의 합성과 그 자기적 특성의 연구)

  • Seung, S.K.;Song, J.H.
    • Journal of the Korean Magnetics Society
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    • v.21 no.3
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    • pp.93-98
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    • 2011
  • We successfully grew $La_{0.35}Pr_{0.35}Ca_{0.3}MnO_3$(LPCMO)/$LaAlO_3$(LAO) thin film using Laser Molecular-Beam Epitaxy and studied post-growth annealing effects ($750^{\circ}C$, 5 h) on its crystal structural and magnetic properties. Whereas the single-layered LPCMO and LPCMO/STO superlattice thin films show rough surface before and after the post-growth annealing, LPCMO/LAO superlattice shows a relatively very flat surface even after the post-growth annealing. The enhancement of ferromagnetism of LPCMO/LAO superlattice after the post-growth annealing was remarkable compared to the single-layered LPCMO thin film. The coercive and saturation magnetic field of the single-layed LPCMO thin film were decreased after the post-annealing. However, for LPCMO/LAO superlattice, a same coercive and increased saturation magnetic field were exhibited after post-growth annealing. We suggest that these peculiar observations are originate from the super-structure of LPCMO and LAO.

Electrical/Dielectric Characterization of 2-Dimenisonal Electron Gas Layers Formed between LaAlO3 and SrTiO3

  • Park, Chan-Rok;Kwon, Kyeong-Woo;Do, Woo-ri;Park, Da-Hee;Baek, Senug-Hyub;Kim, Jin Sang;Hwang, in-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.366.2-366.2
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    • 2014
  • Impedance spectroscopy allows for simultaneous characterization of interface-controlled materials and/or devices in terms of electrical and dielectric aspects. Recently, there have tremendous interests in 2-dimensional electron gas layers (2DEGs) involving $LaAlO_3$ and $SrTiO_3$ whose features incorporates extremely high mobility and carrier concentrations along with metallic responses unlike the constituents, $LaAlO_3$ and $SrTiO_3$. Impedance spectroscopy offers the following unique features, such as simultaneous determination of conductivity and dielectric constants, identification of electrical origins among bulk-, grain boundary-, and electrode-based responses. Impedance spectroscopy was applied to the 2DEG $LaAlO_3/SrTiO_3$ system, in order to extract the electrical and dielectric information operating in the 2DEG system. The unique responses of the 2DEG system are investigated in terms of temperature and device structures. The underlying mechanism of the 2DEG system is proposed with the aim to optimizing the high-mobility 2DEG responses and to expedite the associated devices towards the high-density integrated chips.

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Phase Stability and Plasma Erosion Resistance of La-Gd-Y Rare-earth Oxide - Al2O3 Ceramics (La-Gd-Y 희토류계 산화물-알루미나 세라믹스의 상안정화 영역과 내플라즈마 특성)

  • Kim, Kyeong-Beom;Lee, Sung-Min
    • Journal of the Korean Ceramic Society
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    • v.47 no.6
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    • pp.540-545
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    • 2010
  • In this study, we have investigated new plasma resistant materials with less usage of rare-earth oxides than $Y_2O_3$ which is currently used in the semiconductor industry. We observed the stability ranges of $(Gd{\cdot}Y)_3Al_5O_{12}$ and $(La{\cdot}Y)Al_{11}O_{18}$ ternary systems, and measured their etch rates under typical fluorine plasma. $(Gd{\cdot}Y)_3Al_5O_{12}$ system showed an extensive solid solution up to 80 mol% gadolinium, but $(La{\cdot}Y)Al_{11}O_{18}$ showed a negligible substitution between rare-earth ions, which can be explained by the differences between the ionic radii. The etch rates depended on the total amount of rare-earth oxides but not on the substitution of the rare-earth ions. When the specimen was examined using XPS after the exposure to fluorine plasma, the strong surface fluorination was observed with a shift of the binding energy to higher energy.

Crystal Habits of Corundum Single Crystals Grown in Cryolite Flux (빙정식 융제로 성장한 Corundum 단결정의 결정형)

  • 장진욱;이태근;정수진
    • Journal of the Korean Ceramic Society
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    • v.29 no.6
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    • pp.463-470
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    • 1992
  • Corundum single crystals were grown in cryolite flux with the composition of Na3AlF6:Al2O3=80:20 wt%. This mixture was melted at 115$0^{\circ}C$, followed by slow cooling at a rate of 2$^{\circ}C$/hr to 96$0^{\circ}C$. And by adding of La2O3 to the flux, the change of crystal forms were observed. Crystal forms of corundum grown in cryolite flux had the habits of hexagonal plate which consist of well developed {0001} face and small {101} face. As La2O3 was added and its content was increased, {223} and {110} faces were developed, and crystal habits of equidimensional forms changed into hexagonal prism form. In a charge of 8 mole% B2O3, Al2O3:La2O3=15:1, transparent corundum single crystals of equent form were grown. As the content of B2O3 was increased, twineed crystals which have twin law of 2-fold parallel to [0001], and composition plane of (110) were grown.

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