Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Phase Stability and Plasma Erosion Resistance of La-Gd-Y Rare-earth Oxide - Al2O3 Ceramics

La-Gd-Y 희토류계 산화물-알루미나 세라믹스의 상안정화 영역과 내플라즈마 특성

  • Kim, Kyeong-Beom (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Sung-Min (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
  • 김경범 (한국세라믹기술원 이천분원 엔지니어링세라믹센터) ;
  • 이성민 (한국세라믹기술원 이천분원 엔지니어링세라믹센터)
  • Received : 2010.10.10
  • Accepted : 2010.10.16
  • Published : 2010.11.30
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Abstract

In this study, we have investigated new plasma resistant materials with less usage of rare-earth oxides than $Y_2O_3$ which is currently used in the semiconductor industry. We observed the stability ranges of $(Gd{\cdot}Y)_3Al_5O_{12}$ and $(La{\cdot}Y)Al_{11}O_{18}$ ternary systems, and measured their etch rates under typical fluorine plasma. $(Gd{\cdot}Y)_3Al_5O_{12}$ system showed an extensive solid solution up to 80 mol% gadolinium, but $(La{\cdot}Y)Al_{11}O_{18}$ showed a negligible substitution between rare-earth ions, which can be explained by the differences between the ionic radii. The etch rates depended on the total amount of rare-earth oxides but not on the substitution of the rare-earth ions. When the specimen was examined using XPS after the exposure to fluorine plasma, the strong surface fluorination was observed with a shift of the binding energy to higher energy.

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References

  1. G. S. May and C. J. Spanos, “Fundamentals of Semiconductor Manufacturing and Process Control,” pp. 98-102, John Wiley & Sons, Inc., New Jersey, 2006.
  2. A. J. V. Roosmalen, J. A. G. Baggerman, and S. J. H. Brader, “Dry Etching for VLSI,” pp. 39-69, Plenum Press, New York and London, 1991.
  3. D-M. Kim, S-Y. Yoon, K-B. Kim, H-S. Kim, Y-S. Oh, and S-M. Lee, “Plasma Resistance of Yttria Deposited by EBPVD Method (in Korean),” J. Kor. Ceram. Soc., 45 [11] 707-12 (2008). https://doi.org/10.4191/KCERS.2008.45.1.707
  4. D-M. Kim, S-M. Lee, S-W. Kim, H-T. Kim, and Y-S. Oh, “Microstructural Changes of the Al2O3 Ceramics during the Exposure to Fluorine Plasma (in Korean),” J. Kor. Ceram. Soc., 45 [7] 405-10 (2008). https://doi.org/10.4191/KCERS.2008.45.7.405
  5. D-M. Kim, K-B. Kim, S-Y. Yoon, Y-S. Oh, H-T. Kim, and S-M. Lee, “Effects of Artificial Pores and Purity on the Erosion Behaviors of Polycrystalline $Al_{2}O_{3}$ Ceramics under Fluorine Plasma,” J. Ceram. Soc. Jpn., 117 [8] 863-67 (2009). https://doi.org/10.2109/jcersj2.117.863
  6. K. Morita, H. Ueno, and H. Murayama, “Plasma Resistant Articles and Production Method Thereof," US Patent 6933254 (2005).
  7. A. Miyazaki, K. Morita, S. Nagasaka, and S. Moriya, “Plasma Resistant Member and Plasma Treatment Apparatus Using the Same,” US Patent 6834613 (2004).
  8. R. J. O’Donnell, J. E. Daugherty, and C. C. Chang, “Boron Nitride/ Yttria Composite Components of Semiconductor Processing Equipment and Method of Manufacturing Thereof,” US Patent 6773751 (2004).
  9. Y. Kobayashi, M. Ichishima, and Y. Yokoyama, “Plasma Resistant Member,” US Patent 7090932 (2006).
  10. J. Iwasawa, R. Nishimizu, M. Tokita, M. Kiyohara, and K. Uematsu, “Plasma Resistant Dense Yttrium Oxide Film Prepared by Aerosol Deposition Process,” J. Am. Ceram. Soc., 90 [8] 2327-32 (2007). https://doi.org/10.1111/j.1551-2916.2007.01738.x
  11. D-M. Kim, K-B. Kim, S-H. Lee, Kim, J-K. Lee, Y-S. Oh, and S-M. Lee, “XPS Study on the Interaction of Yttrium-Aluminum Oxide with Fluorine-based Plasma,” J. Am. Ceram. Soc., submitted, (2010).
  12. K-B. Kim, D-M. Kim, J-K. Lee, Y-S. Oh, H-T. Kim, H-S. Kim, and S-M. Lee, “Erosion Behaviors of YAG Ceramics under Fluorine Plasma and their XPS Analysis,” J. Kor. Ceram. Soc., 46 [5] 456-61 (2009). https://doi.org/10.4191/KCERS.2009.46.5.456
  13. J. C. Vickerman and I. S. Gilmore, Surface Analysis p. 53, 2nd ed., Wiley, Singapore, 2009.
  14. R. A. Kent, “Mass Spectrometric Studies of Plutonium Compounds at High Temperatures. II. The Enthalpy of Sublimation of Plutonium(III) Fluoride and the Dissociation Energy of Plutonium(I) Fluoride,” J. Am. Chem. Soc., 90 [21] 5657-59 (1968). https://doi.org/10.1021/ja01023a002