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http://dx.doi.org/10.4191/KCERS.2010.47.6.540

Phase Stability and Plasma Erosion Resistance of La-Gd-Y Rare-earth Oxide - Al2O3 Ceramics  

Kim, Kyeong-Beom (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
Lee, Sung-Min (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
Publication Information
Journal of the Korean Ceramic Society / v.47, no.6, 2010 , pp. 540-545 More about this Journal
Abstract
In this study, we have investigated new plasma resistant materials with less usage of rare-earth oxides than $Y_2O_3$ which is currently used in the semiconductor industry. We observed the stability ranges of $(Gd{\cdot}Y)_3Al_5O_{12}$ and $(La{\cdot}Y)Al_{11}O_{18}$ ternary systems, and measured their etch rates under typical fluorine plasma. $(Gd{\cdot}Y)_3Al_5O_{12}$ system showed an extensive solid solution up to 80 mol% gadolinium, but $(La{\cdot}Y)Al_{11}O_{18}$ showed a negligible substitution between rare-earth ions, which can be explained by the differences between the ionic radii. The etch rates depended on the total amount of rare-earth oxides but not on the substitution of the rare-earth ions. When the specimen was examined using XPS after the exposure to fluorine plasma, the strong surface fluorination was observed with a shift of the binding energy to higher energy.
Keywords
Rare-earth oxide; Plasma resistance; Phase stability;
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Times Cited By KSCI : 3  (Citation Analysis)
Times Cited By SCOPUS : 0
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