• Title/Summary/Keyword: LPCVD

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New Selective Tungsten Deposition Process by the alternating Cyclic Hydrogen Reduction of $WF_6$ using LPCVD (LPCVD을 사용하여 $WF_6$의 교번적 수소환원 반응에 의한 새로운 선택적 텅스텐 박막 증착)

  • ;Arnold Reisman;Christopher Berry
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.39 no.7
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    • pp.692-701
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    • 1990

  • New selective tungsyen deposition deposition on silicon process is described which makes use of a previously unreported, alternating cyclic,

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Physical Characteristics of Polycrystalline 3C-SiC Thin Films Grown by LPCVD (LPCVD로 성장된 다결정 3C-SiC 박막의 물리적 특성)

  • Chung Gwiy-Sang;Kim Kang-San
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.732-736
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    • 2006

  • This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

  • https://doi.org/10.4313/JKEM.2006.19.8.732 인용 PDF KSCI

Reduction of Oxygen Concentration in the LPCVD Polysilicon Films Deposited by $N_2$ Gas-Flow Method ($N_2$ 가스 Flow에 의한 LPCVD 방법으로 증착된 다결정 실리콘 박막의 산소농도 저하)

  • An, Seung-Jung;Jeong, Min-Ho
    • Korean Journal of Materials Research
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    • v.9 no.3
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    • pp.269-273
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    • 1999

  • Polycrystalline silicon films are generally deposited by LPCVD, utilizing the thermal decomposition of $SiH_4$ gas. When silicon wafers are loaded into the furnace in order to reduce oxygen concentration of the films, we flow 20slm N, gas from top to bottom of the furnace, and then deposit films of $1000\AA$ thickness to measure oxygen concen­tration by SIMS. As a consequence of SIMS, we obtain oxygen concentration in films lower about 30 times than that of films deposited with 20slm $N_2$ gas-flow through the short injector in the hatch of furnace. In our long injector system, we estimate a reproducibility by uniformity, particle, and Rs of the deposited films.

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