• Title/Summary/Keyword: LG Electronic

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Design and Simulation of White Color Mixing Lens for Backlight Unit

  • Hwang, Sung-Kyung;Lim, Mee-Hyun;Han, Hae-Wook;Cho, Min-Su;Lee, Jae-Ho;Jang, Kyeng-Kun;Kang, Sin-Ho;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.229-230
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    • 2009
  • This paper proposes a new design of ultra-slim color mixing lens (CML) for backlight unit (BLU), and presents simulated performance of the design. The novel color mixing structure has a shorter mixing length (< 1cm) than the existing color mixing structure, and achieves high efficiency and uniformity.

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Controller Development of Booster Multi-Pump System (급수 가압 멀티 펌프 시스템의 컨트롤러 개발)

  • Lee, Sang-Kyun;Lee, Jae-Choon;Lee, Byeong-Hoon;Hwang, Min-Kyu
    • Proceedings of the KIEE Conference
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    • 1996.07a
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    • pp.382-384
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    • 1996
  • This paper introduces the controller development of booster multi-pump system with constantly estimated control algorithm. Through analyzing by the experiment of optimal pressure with a certain flow rate. The larger pressure processing apparatus in microprocessor makes optimal water-supplying. This method is implemented with the only pure control algorithm without any other mechanical or circuitry apparatus. Also, Pump's life is lengthened by exchanging simple on, off and rotational inverter control. Optimal condition for pump is adjusted by the inverter control, and compact control panel helps the booster system install in real field.

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The electronic structures and the electrical properties of ITO thin films by REELS and c-AFM

  • Baik, Min-Kyung;Joo, Min-Ho;Choi, Jong-Kwon;Park, Kyu-Ho;Sung, Myeon-Chang;Lee, Ho-Nyun;Kim, Hong-Gyu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1333-1335
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    • 2007
  • We studied the surface defects and the current distributions of ITO thin films by reflected electron energy loss spectroscopy (REELS) and conductiveatomic force microscope (c-AFM). The ohmic behavior of ITO thin film was observed at $230\;^{\circ}C$ annealed sample. The defects related to the electronic structure decreased after anneal process.

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A High-Efficiency CMOS Power Amplifier Using 2:2 Output Transformer for 802.11n WLAN Applications

  • Lee, Ockgoo;Ryu, Hyunsik;Baek, Seungjun;Nam, Ilku;Jeong, Minsu;Kim, Bo-Eun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.280-285
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    • 2015
  • A fully integrated high-efficiency linear CMOS power amplifier (PA) is developed for 802.11n WLAN applications using the 65-nm standard CMOS technology. The transformer topology is investigated to obtain a high-efficiency and high-linearity performance. By adopting a 2:2 output transformer, an optimum impedance is provided to the PA core. Besides, a LC harmonic control block is added to reduce the AM-to-AM/AM-to-PM distortions. The CMOS PA produces a saturated power of 26.1 dBm with a peak power-added efficiency (PAE) of 38.2%. The PA is tested using an 802.11n signal, and it satisfies the stringent error vector magnitude (EVM) and mask requirements. It achieves -28-dB EVM at an output power of 18.6 dBm with a PAE of 14.7%.

Practical Application of Lead-free Solder in Electronic Products

  • Cho Il-Je;Chae Kyu-Sang;Min Jae-Sang;Kim Ik-Joo
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2004.09a
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    • pp.93-99
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    • 2004
  • At present, LG Electronics pushes ahead to eliminate the Pb(Lead) -a hazardous material- from all products. Especially, we have performed to select the optimum standard composition of lead free alloy for the application to products for about 3 years from 2000. These days, we have the chance for applying to the mass-production. This project constructed the system for applying the lead free solders on consumer electronic products, which is one of the major products of the LG Electronics. To select the lead free solders with corresponding to the product features, we have passed through the test and applied with Sn-3.0Ag-0.5Cu alloy system to our products, and for the application to the high melting temperature composition, we secured the thermal resistance of the many parts and substrate and optimized the processing conditions. We have operated the temperature cycling test and the high temperature storage test under the standards to confirm the reliability of the products. On these samples, we considered the consequence of our decision by the operating test. For the long life time of the product, we have operated the temperature cycling test at $-45^{\circ}C-+125^{\circ}C$, 1 cycle/hour, 1000 cycles. Also we have tested the tin whisker growth about lead free plating on lead finish. We have analyzed with the SEM, EDS and any other equipment for confirming the failure mode at the joint and the tin whisker growth on lead free finish.

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Dielectric Strength Enhancement of Extra High Voltage XLPE Power Cable by Micro-Structural Treatment on Semi-Conductive Interface (XLPE 계면에서의 라멜라 구조 제어 및 전기적 특성)

  • Cho, Dae-Hee;Shim, Sung-Ik;Youn, Bok-Hee;Lee, Sang-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.293-296
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    • 2004
  • 초고압 케이블의 절연물질로 널리 사용되고 있는 가교 폴리에틸렌의 전기적 특성은 라멜라 결정 조직의 밀도와 라멜라 조직의 성장방향과 밀접한 관련이 있는 것으로 알려지고 있다. 본 연구에서는 반도전 물질에 2종의 첨가제를 이용하여 처방한 3종의 반도전 컴파운드에 대하여 시편 제작 조건에 따른 미세 조직을 제어하여 폴리에틸렌의 미세 조직을 변화시킴으로써, 라멜라 조직이 전기적 특성에 미치는 영향을 분석하였다. 전기적 특성은 AC 절연파괴 전압을 측정하였으며, 미세 조직 변화를 조사하기 위하여 TEM 이미지 분석 통하여 라멜라 밀도를 통계적으로 정성 분석하여 상관관계를 규명하였다.

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Heating simulations of the pancake in the simplified 3D microwave oven (간략화된 Cavity내부의 Pancake 가열 시뮬레이션)

  • Lee, Pyeong-Hwa;Cheon, Chang-Yul;Lee, Seung-Woo;Hahn, Song-Yop;Cho, Kyu-Wan;Kim, Eung-Su;Jeong, Bong-Sik;Kim, Hyun-Jung
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1741-1743
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    • 1996
  • This paper presents simulations of the pancake in the simplified 3D microwave oven. The results were compared with experimental data. For the comparison we used infrared photography of the heated pancake and electric field distribution obtained by simulation. Finite Element Method (FEM) using edge element is employed for the simulation. For solving the large sparse system parallelled QMR method was used.

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