• 한국세라믹학회지
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• 제52권4호
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• pp.229-233
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• 2015

Currently, the majority of commercial white LEDs are phosphor converted LEDs made of a blue-emitting chip and YAG yellow phosphor dispersed in organic silicone. However, silicone in high-power devices results in long-term performance problems such as reacting with water, color transition, and shrinkage by heat. Additionally, yellow phosphor is not applicable to warm white LEDs that require a low CCT and high CRI. To solve these problems, mixing of green phosphor, red phosphor and glass, which are stable in high temperatures, is common a production method for high-power warm white LEDs. In this study, we fabricated conversion lenses with LUAG green phosphor, SCASN red phosphor and low-softening point glass for high-power warm white LEDs. Conversion lenses can be well controlled through the phosphor content and heat treatment temperature. Therefore, when the green phosphor content was increased, the CRI and luminance efficiency gradually intensified. Moreover, using high heat treatment temperatures, the fabricated conversion lenses had a high CRI and low luminance efficiency. Thus, the fabricated conversion lenses with green and red phosphor below 90 wt% and 10 wt% with a sintering temperature of $500^{\circ}C$ had the best optical properties. The measured values for the CCT, CRI and luminance efficiency were 3200 K, 80, and 85 lm/w.

• 한국통신학회논문지
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• 제38C권8호
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• pp.725-732
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• 2013

최근 LED의 저전력, 장수명, 동작 속도, 제어성, 고품질의 색 연출성, 지속 가능성 등의 이유로, LED 응용 분야가 확대되고 있다. 그러나 고출력 LED 조명 시스템을 구현하는데 있어, 방열은 큰 걸림돌이 되고 있다. 본 논문에서는 고출력 투광등 설계를 위한 방열 방안으로 메탈 PCB 설계, 열전 소자, 히트 파이프, 방열판, 팬(fan) 등의 적층 연동 구조를 제안하고 구현 방안을 제시하였다. 아울러 본 논문에서는 RS-485 통신을 통한 DMX512 프로토콜 기반 LED 조명 시스템 제어 방안을 제시하였다. DMX512 프로토콜은 조명장치와 조명제어 모듈의 연결에 대한 사실상 세계적 표준이며 이를 활용한 무대 조명이나 경관 조명 시스템 개발이 지속적으로 이루지고 있다. 본 논문에서는 이를 이용한 LED 조명 제어 및 응용 기술을 소개하고 주제어기를 무선으로 원격 제어하는 방안을 제안하였다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2018년도 추계학술대회
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• pp.480-483
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• 2018

본 논문에서는 CMOS센서 기반 가시광 통신 시스템에서 고속전송을 위한 다중 광원의 간섭제거 및 이미지 센싱 처리기술에 대해서 연구하였다. 이미지센서를 통한 광학카메라 통신에서 전송 용량을 향상 시키려면 각 LED에서 다른 데이터를 동시에 전송해야한다. 그러나 고속전송을 위한 다수의 LED광원 환경은 인접한 LED 간 간섭을 일으킬 수 있다. 이 경우, 가시광통신시스템은 일반적으로 세기 변조를 사용하기 때문에 다수의 LED가 동시에 데이터를 전송할 경우 인접한 LED의 빛 퍼짐 간섭으로 인해 각각의 LED들의 정확한 신호 검출이 어렵다. 이러한 문제를 해결하기 위해서, 듀얼 CMOS 센서를 사용하여 다수의 광원 LED의 ON/OFF 상태를 정확히 인식하고, 각각의 LED들의 이미지 시그널 프로세싱 기법을 제안하였다. 이러한 기법을 통해 다수의 LED픽셀을 정확하게 인식하여 다중LED OCVLC 시스템의 총 평균 비트 오류율과 처리량을 향상시킬 수 있다.

• 패션비즈니스
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• 제25권1호
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• pp.51-64
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• 2021

The purpose of this study was to develop smart bags that combining fashion-specific trends and smart information technologies such as light-emitting diodes(LED) and optic fibers by grafting marquage techniques that have recently become popular as part of eco-fashion. We applied e-textiles by designing leather tote bags that could show off LED luminescence. A total of two tote bags, a white-colored peacock design and a black-colored paisley design, divided the LED's light-emitting method into two types, incremental lighting and random light-emission to suit each design, and the locations of the optical fibers were also reversed depending upon the design. The production of circuits for the LEDs and optical fibers was based on the design, and a flexible conductive fabric was laser-cut instead of wire line and attached to the circuit-line location. A separate connector was underwent three-dimensional(3D)-modeling and was connected to high-luminosity LEDs and optic fiber bundles. The optical fiber logo part expressed a subtle image using a white-colored LED, which did not offset the LED's sharp luminous effects, suggesting that using LEDs with fiber optics allowed for the expression of each in harmony without being heterogeneous. Overall, the LEDs and fiber optic fabric were well-harmonized in the fashion bag using marquage techniques, and there was no sense of it being a mechanical device. Also, the circuit part was made of conductive fabric, which is an e-textile product that feels the same as a thin, flexible fabric. The study confirmed that the bag was developed as a smart wearable product that could be used in everyday life.

• 센서학회지
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• 제31권4호
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• pp.249-254
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• 2022

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

• 전기전자학회논문지
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• 제27권1호
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• pp.30-37
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• 2023

양자점 발광 다이오드(QD-LED)의 효율과 안정성 향상을 위해서 QD 발광층에 주입되는 전하의 균형을 이루는 것은 필수이다. 산화 아연(ZnO)은 최신 QD-LED에서 전자수송층(electron transport layer, ETL)을 구성하기 위해 가장 많이 사용되고 있으나, ZnO의 자발적인 전자 주입은 QD-LED의 성능을 크게 열화시키는 과도한 전자 주입을 유발한다. 본 연구에서는 자기조립단분자막(self-assembled monolayer, SAM) 처리를 통해 ZnO의 전자 주입 특성을 조절하여 QD-LED의 성능을 향상시켰다. 전하 균형도를 향상시킨 결과, SAM을 처리한 QD-LED는 SAM을 처리 안한 소자와 비교하여 내부 양자 효율(external quantum efficiency, EQE)이 25%, 최대 휘도는 200% 향상되었다.

• 센서학회지
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• 제33권4호
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• pp.224-229
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• 2024

Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide color gamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms, such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its higher mobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons pass through the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL), resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on all-solution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigate HTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmed to effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness also ensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achieved in the all-solution-processed inverted InP QD-LEDs with the EBL.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.559-562
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• 2009

Due to the enormous progress achieved in light emitting diodes (LEDs) LEDs have been become a good solution for lightings. In LED driver for lighting applications, it is required high input voltage to drive more LEDs. Therefore, high-voltage should be changed to low-voltage to supply power for drive IC. In this paper, LED drive IC using voltage clamp bias circuit, it use a hysteretic-buck converter topology was proposed and verified through experiments.

• 한국신뢰성학회지:신뢰성응용연구
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• 제12권3호
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• pp.177-186
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• 2012

This paper presents a comparison of the failure mechanism for high power converted white LEDs(3W) with the commercially available YAG:Ce and silicate phosphor. We carry out the normal aging life test for 10,000 hours, the high temperature aging test for 8,000 hours, the high temperature and humidity aging test for 8,000 hours and the current aging testing for 5,000 hours. The optical and electrical parameters of LEDs were monitored, such as lumen, correlated color temperature (CCT), chromaticity coordinates(x, y), thermal resistance, I -V curve and spectrum intensity. The stress induced a luminous flux decay on LED in all experiments and causes a failure. So we try to find out what's a main failure mechanism for a high power LED.