• Journal of Ecology and Environment
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• v.45 no.1
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• pp.54-61
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• 2021

Background: The sunfleck is an important light environmental factor for plants that live under the shade of trees. Currently, the smartfarm has a system that can artificially create these sunfleks. Therefore, it was intended to find optimal light conditions by measuring and analyzing photosynthetic responses of Eutrema japonica (Miq.) Koidz., a plant living in shade with high economic value under artificial sunflecks. Results: For this purpose, we used LED pulsed light as the simulated sunflecks and set the light frequency levels of six chambers to 20 Hz, 60 Hz, 180 Hz, 540 Hz, 1620 Hz, and 4860 Hz of a pulsed LED grow system in a plant factory and the duty ratio of the all chambers was set to 30%, 50%, and 70% every 2 weeks. We measured the photosynthetic rate, transpiration rate, stomatal conductance, and substomatal CO2 partial pressure of E. japonica under each light condition. We also calculated the results of measurement, A/Ci, and water use efficiency. According to our results, the photosynthetic rate was not different among different duty ratios, the transpiration rate was higher at the duty ratio of 70% than 30% and 50%, and stomatal conductance was higher at 50% and 70% than at 30%. In addition, the substomatal CO2 partial pressure was higher at the duty ratio of 50% than 30% and 70%, and A/Ci was higher at 30% than 50% and 70%. Water use efficiency was higher at 30% and 50% than at 70%. While the transpiration rate and stomatal conductance generally tended to become higher as the frequency level decreased, other physiological items did not change with different frequency levels. Conclusions: Our results showed that 30% and 50% duty ratios could be better in the cultivation of E. japonica due to suffering from water stress as well as light stress in environments with the 70% duty ratio by decreasing water use efficiency. These results suggest that E. japonica is adapted under the light environment with nature sunflecks around 30-50% duty ratio and low light frequency around 20 Hz.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.88.1-88.1
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• 2015

In recent printed electronics technology, Photo-Sintering, a technique for sintering materials using a light source, has attracted attention as an alternative to time-consuming high-temperature thermal processes. The key principle of this technique is the selective heating of a strongly absorbent thin film, while preventing the heating of the transparent substrate by the light source. Many recent studies have used a flash lamp as the light source, and investigated the material-dependent effect of the width or intensity of the pulsed light. However, the flash lamp for sintering is not suitable for industry yet, because of needing too high power to sinter for a large scale. In energy-saving and large-scale sintering, LED technologies would be very useful in the near future. In this work, we investigated a sintering process for silver nanoparticles using UV-LED array. Silver nanoparticles in ink were inkjet-printed on a $1{\times}1cm$ area of a PET film and photo-sintered by 365 nm UV-LED module. A sheet resistance value as low as $72.6m{\Omega}/sq$ (2.3 - 4.5 times that of bulk silver) was obtained from the UV-LED sintering at 300 mW/cm2 for 50 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.10-11
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• 2008

We developed the equipment palpating cell proliferation using a high brightness LED. This equipment was fabricated using a micro-controller and a high brightness LED, and designed to enable us to control light irradiation time, intensity, frequency and so on. Especially, to control the light irradiation frequency, FPGA was used, and to control the change of output value, TLC5941 was used. Control stage is divided into 30 levels by program. Consequently, the current value could be controlled by the change of level in Continue Wave(CW) and Pulse Width Modulation(PWM), and the output of a high brightness LED could be controlled stage by stage. And then, each experiment was performed to irradiation group and non-irradiation group for bone marrow cells. MIT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590nm transmittance of ELISA reader. As a result, the cell increase of bone marrow cells was verified in irradiation group as compared to non-irradiation group.

• Korean Journal of Food Science and Technology
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• v.47 no.1
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• pp.81-86
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• 2015

Intense pulsed light (IPL), a nonthermal technology, has attracted increasing interest as a food processing technology. However, its efficacy in inactivating microorganisms has not been evaluated thoroughly. In this study, we investigated the influence of IPL treatment on the inactivation of Escherichia coli O157:H7 depending on light intensity, treatment time, and pulse number. Increased light intensity from 500 V to 1,000 V, raised the inactivation rate at room temperature. At 1000 V, the cell numbers were reduced by 7.1 log cycles within 120 s. In addition, increased pulse number or decreased distance between the light source and sample surface also led to an increase in the inactivation rate. IPL exposure caused a significant increase in the absorption at 260 nm of the suspending agent used in our experiments. This indicates that IPL-treated cells were damaged, consequently releasing intracellular materials. The growth of IPL-irradiated cells were delayed by about 5 h. The degree of damage to the cells after IPL treatment was confimed by transmission electron microscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.1-3
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• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates knave been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Korean Journal of Acupuncture
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• v.28 no.3
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• pp.13-23
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• 2011

Objectives : The aim of this study was to develop the combined medical stimulus system consisted of the PEMFs (Pulsed electromagnetic fields) and LED which are able to stimulate local point such as acupoints and trigger points. Methods : To evaluate the therapeutic effect on the musculoskeletal disorders and the possibility of alternative method on manual acupuncture, we compared the fatigue recovery of two groups by analyzing the EMG and peak torque (non-stimulation and, stimulation group) after strenuous knee exercise. We chose the LR9 as a stimulation point. Results : The median frequency (MF) and fatigue index (F.I) of the stimulation group were recovered faster than those of the non-stimulation group. Also the peak torques of both groups were not restored until after 20 minutes. However, the peak torque of the stimulation group was regained higher than that of the non-stimulation group. Conclusions : We confirmed that the proposed combined stimulus system had useful effects as treatment instrument of musculoskeletal disorder using non-invasive method of PEMFs and LED.