• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.11a
• /
• pp.148-148
• /
• 1999

• Journal of Korean Neurosurgical Society
• /
• v.63 no.6
• /
• pp.730-737
• /
• 2020

Objective : Spinal degeneration is a progressive disease, worsening over time. Lumbar degenerative disease (LDD) is a major spinal disease in elderly patients. Surgical treatment is considered for medically intractable patients with LDD and reoperation after primary surgery is not uncommon. The surgical outcome is occasionally unpredictable because of comorbidities. In the present study, the relationship between comorbidities and the incidence of reoperation for LDD over time was determined. Methods : The claims data of the health insurance national database were used to identify a cohort of patients who underwent spinal surgery for LDD in 2009. The patients were followed up until 2016. Medical comorbidity was assessed according to the Charlson comorbidity index (CCI). Cox proportional hazard regression modeling was used to identify significant differences in sex, surgery, age, causative disease, and comorbidity. Results : The study cohort included 78241 patients; 10328 patients (13.2%) underwent reoperation during the observation period. The reoperation rate was statistically higher (p<0.01) in males, patients 55-74 years and 65-74 years of age, and patients with decompression or discectomy. Significant association was found between increasing reoperation rate and CCI score (p<0.01). Based on multivariate analysis of comorbidities, the significantly higher reoperation rates were observed in patients with peripheral vascular disease, pulmonary lung disease, peptic ulcer, diabetes, and diabetes complications (p<0.01). Conclusion : The study results indicate the reoperation rate for LDD is associated with patient comorbidities. The comorbidities identified in this study could be helpful in future LDD studies.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2001.05a
• /
• pp.311-316
• /
• 2001

The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. At devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and also newEPI MOSFET for improved structure to weak point of LDD structure by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impart ionization, electric field and I-V curve with those of lightly-doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

• Journal of Semiconductor Engineering
• /
• v.3 no.2
• /
• pp.161-167
• /
• 2022

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• Journal of Periodontal and Implant Science
• /
• v.27 no.4
• /
• pp.701-722
• /
• 1997

It was reported that low dose doxycycline(LDD) regimen could inhibit pathologically elevated collagenase activity in the gingival crevicular fluid of petients with adult periodontitis without producing typical antibiotic side effects. The purpose of this study was to evaluate the effects of LDD regimen(20mg) administered during non-surgical therapy on clinical index and gingival crevicular fluid enzyme activity in diabetics who are at high risk for periodontal disease. Forty-nine subjects having at least two sites with probing pocket depths greater than 4mm were selected. In this double-blind, placebo-controlled study, the patients were administered 20 mg doxycycline capsule or placebo capsule b.i.d. for 2 weeks. Clinical parameters of dental plaque, gingival inflammation, probing pocket depth and probing attachment level were assessed at week 0, 2, 4, and 8. Gingival crevicular fluid samples were collected at the same time to evaluate the activities of collagenase and elastase. Clinical parameters and elastase activity were significantly reduced in all groups compared to the baseline value after treatment. Significantly greater reduction in pocket depth and gain in attachment level was shown in the LDD-administered group compared to placebo group in both adult periodontitis and diabetic patients. Total collagenase activity was also reduced significantly in all groups after treatment, but the greater reduction was seen in the LDD-administered diabetics group compared to relevant placebo group(at 4, 8week). Significantly greater reduction in active collagenase activity was also seen in the LDD-administered group compared to placebo group in diabetic patients(at 2, 4, 8week). These results indicated that use of low dose doxycycline could be aueseful adjunct to instrumentation therapy in the management of diabetic patient with periodontitis as well as adult periodontitis patient.

• Journal of IKEEE
• /
• v.21 no.1
• /
• pp.96-99
• /
• 2017

In this study the influence of the random dopant fluctuation (RDF) depending on the halo and LDD implantations for the metal-oxide-semiconductor field effect transistor is investigated through the 3D atomistic device simulation. For accuracy in calculation, the kinetic monte carlo method that models individual impurity atoms and defects in the device was applied to the atomistic simulation. It is found that halo implantation has the greater influence on RDF effects than LDD implantation; three-standard deviation of $V_{TH}$ and $I_{ON}$ induced by halo implantation is about 6.45 times and 2.46 times those of LDD implantation. The distributions of $V_{TH}$ and $I_{ON}$ are also displayed in the histograms with normal distribution curves.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.641-644
• /
• 2008

Traditional LTPS TFT needs additional LDD process to decrease leakage current. However the fabrication process is no suitable for PI substrate. Additional laser multi-irradiation will damage the poly-Si to cause the TFT electrical degrade. Therefore we propose the simplified process to activate the $N^+$ and $N^-$ at the same time.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.875-878
• /
• 1999

In this paper, we measured and simulated the transconductance change of submicron LDD NMOSFETs due to back bias under various channel length, temperature and substrate doping conditions. As back bias is increased, the mobility will decrease and g$_{m}$ decreases according to a conventional model. But as the channel length is reduced, this phenomenon is inverted and g$_{m}$ increases in the submicron region. This can be explained by analyzing the electron quasi Fermi potential in the channel. And the empirical formulae which show the g$_{m}$ change were induced. These will be helpful to enhance the efficiency and precision of IC design.esign.

• Proceedings of the IEEK Conference
• /
• 1999.06a
• /
• pp.918-921
• /
• 1999

The breakdown voltage in fully depleted SOI N-MOSFET’s have been studied over a wide range of film thicknesses, channel doping, and channel lengths. An asynmmetric Source/Drain SOI technology is proposed, which having the advantages of Normal LDD SOI(Silicon-On-Insulator) for breakdown voltage and gives a high drivability of LDD SOI without sacrificings hot carrier immunity The two-dimensional simulations have been used to investigate the breakdown behavior in these device. It is found that the breakdown voltage(BVds) is almost same with high current drivability as that in Normal LDD SOI device structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.8
• /
• pp.587-595
• /
• 1998

Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.