• Korean Journal of Optics and Photonics
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• v.2 no.4
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• pp.186-192
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• 1991

For the micro-lithography using a excimer laser beam $(\lambda\leq0.248$\mu\textrm{m})$. a mirror system consisting of four spherical surfaces with reductlon magnification 5X is designed. Initially the aplanat, flat field and the distortion free condition of the system are analytically investigated within Seidel 3rd order aberrations. And the computer-aided optimization technique has been employed for the further improved performance of the system. The final system has N.A. of 0.15 and image field diameter 3.3 mm, and has the diffraction-limited performance for KrF eximer laser beam.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.269-274
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• 1999

As the semiconductor industry enters the next century, we are facing to the technological changes and challenges. Optical lithography has driven by the miniaturisation of semiconductor devices and has been accompanied by an increase in wafer productivity and performance through the reduction of the IC image geometries. In the last decade, DRAM(Dynamic Random Access Memories) have been quadrupoling in level of integration every two years. Korean chip makers have been produced the memory devices, mainly DRAM, which are the driving force of IC＇s(Integrated Circuits) development and are the technology indicator for advanced manufacturing. Therefore, Korean chip makers have an important position to predict and lead the patterning technology. In this paper, we will be discussed the limitations of the optical lithography, such as KrF and ArF. And, post optical lithography technology, such as E-beam lithography, EUV and E-beam Projection Lithography shall be introduced.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.20-30
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• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.158-162
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• 2006

Poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate] was synthesized and evaluated as a matrix resin for extreme UV (EUV) chemically amplified resist. The resist system formulated with this polymer resolved 120 nm line and space (pitch 240 nm) positive patterns using a KrF excimer laser scanner (0.60 NA). The well defined 50 nm line positive patterns (pitch 180 nm) were obtained using an EUV lithography tool. The dry etching resistance of this resist for a $CF_{4}$-based plasma was 1.1 times better than that of poly(4-hydroxystyrene).

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.252-259
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• 1993

A holosymmetric four-mirror system with unit magnification is designed for use in the micro-lithography using a deep ultraviolet wavelength of $0.248 {\mu}m$(KrF excimer laser line). In the holosymmetric system all orders of coma and distortion are zero. By applying this principle to the 4-spherical mirror system, we have obtained only one exact solution for the unit magnification holosymmetric four-spherical mirror system with all zero third order aberrations. For correction of the residual higher order aberrations of the system, aspherization is introduced keeping the holosymmetric properties. We have obtained near diffraction-limited performance for the wavelength of 0.248 pm within N.A. of 0.33 and image field diameter of 7.6 mm.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.81-87
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• 1991

A design of a four-mirror optical system for submicron lithography using KrF excimer laser beam(λ=248nm) is presented. By using the third order aberration theory, analytic solutions for a telecentric, flat-field, and anastigmatic four-spherical-mirror system (reduction magnification 5$\times$) are found. Aspherization is carried out to the spherical mirror surfaces in order to reduce the residual higher order aberrations and vignetting effect. Finally we obtain a reflection system useful in submicron lithographic application.

• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.373-380
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• 1993

A five mirror system with a reduction magnification(M=+1/5) is designed for DUV optical lithography. Initially, numerical solutions of all zero 3rd order aberrations and zero 5th order spherical aberration are obtained for the spherical mirror system. Next, by the optimization method, the aspherization is carried out to the two spherical mirrors to obtain a system that has as less residual aberrations, higher NA and improved MTF as possible. We have finally obtained the system of which NA is 0.45 and the resolution is about 500 cycles/mm at the 50% MTF value criterion and the depth of focus of $1.0{\mu}m$ for the nearly incoherent illumination$({\sigma}=1.0)$ and the wavelength of 0.248 m(KrF excimer laser line).

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.88-89
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• 1991

For the micro-lithography using a KrF excimer laser beam(λ=0.248${\mu}{\textrm}{m}$) a mirror system consisting of four spherical surfaces with reduction magnification 5$\times$ is designed. Initially the aplanat condition of the mirror system is considered. And for the further improved performance of the system the distortion free condition and flat field condition within Seidel 3rd order aberrations are added to the above condition. During the process of designing the computer-aided optimization technique is extensively employed. The spherical aberration, coma, field curvature and distortion of the optimized four-spherical mirror system are removed to the diffraction limit, and residual astigmatism and off-axial vignetting are not corrected enough.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.453-461
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• 1999

In this paper, we have studied on the effects of annular and quadrupole illuminations by changing their conditions for enhancing the pattern resolution and depth of focus (OaF) in the optical lithography system using KrF Eximer laser 0.248$\mu$m and 0.65 NA. As a result, it is revealed that each illumination condition to optimize the resolution and the OaF for the mask containing the assistance pattern is different under the annular illumination. And in case of quadrupole illumination, we could ascertain that the resolution and the OaF would be enhanced through changing the arrangement of each pole from the conventional X type (45 degrees) to some proper type according to the main pattern direction. ction.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.12
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• pp.13-20
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• 2004

Manufacturing process for the microfluidic device can include such sequential steps as master fabrication, electroforming, and injection molding. The laser ablation using masks has been applied to the fabrication of channels in microfluidic devices. In this study, manufacturing of polymer master and mold insert for micro injection molding was investigated. Ablation of PET (polyethylene terephthalate) by the excimer laser radiation could be used successfully to make three dimensional master fur nickel mold insert. The mechanism fur ablative decomposition of PET with KrF excimer laser $({\lambda}: 248 nm, pulse duration: 5 ns)$ was explained by photochemical process, while ablation mechanism of PMMA (polymethyl methacrylate) is dominated by photothermal process, the .eaction between PC (polycarbonate) and KrF excimer laser beam generate too much su.face debris. Thus, PET was adopted in polymer master for nickel mold insert. Nickel electroforming using laser ablated PET master was preferable for replication method. Finally, it was shown that excimer laser ablation can substitute for X-ray lithography of LIGA process in microstructuring.