• Korean Journal of Optics and Photonics
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• v.4 no.2
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• pp.157-161
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• 1993

An optical autofocus system for a DUV KrF excimer laser wafer stepper was developed by using the PSD (Position Sensitive Detector) as the position sensor. The laser beam was incident on the surface of wafer and the reflected beam was magnified optically by a lens. And the beam was directed onto the surface of PSD by a mirror system. The spatial resolution of the autofocus system was found to be $0.03{\mu}m$.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.268-272
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• 2004

Transparent materials such as fused silica are widely utilized in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. In this study, we made a few micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone solution and toluene were used as etchant. In the side of etch rate, toluene solution was better than pyrene-acetone solution. But we made in wider range of energy density using pyrene-acetone solution. But pyrene-acetone solution gave us wider window of energy density for successful micro patterning.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.05a
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• pp.245-249
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• 2004

Transparent materials such as fused silica are important materials in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. However, these properties make it difficult to micromachine silica in micro-sized quantities. In this study, we fabricated a micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone, toluene, and pyrene-toluene solution were used as etchant. In the side of etch rate, toluene and pyrene-toluene solution were better than pyrene-acetone solution.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.743-746
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• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.393-396
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• 1988

In discharge excited excimer laser, it is hard to say that the analysis of laser operation was well explained until now. But this can be improved by analysis the nonlinear discharge characteristics in the cavity. The nonlinear characteristics can be analysed by solving the nonlinear resistance which depends on electron mobility and number density. We can calculate the electron mobility and number density each other using Boltzmann equation and Kinetics equation. So we calculated the nonlinear resistance and analysed nonlinear discharge characteristics.

• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.33-36
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• 2000

KrF excimer laser, which is useful for fabrication of fiber gratings, was irradiated on the PLC-type WDM directional coupler and the transmission wavelength shift was observed as a function of UV exposure time. The effective refractive index change of rectangular silica waveguide was calculated from the wavelength shift measurement and the coupled mode theory. heory.

• Korean Journal of Optics and Photonics
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• v.2 no.4
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• pp.186-192
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• 1991

For the micro-lithography using a excimer laser beam $(\lambda\leq0.248$\mu\textrm{m})$. a mirror system consisting of four spherical surfaces with reductlon magnification 5X is designed. Initially the aplanat, flat field and the distortion free condition of the system are analytically investigated within Seidel 3rd order aberrations. And the computer-aided optimization technique has been employed for the further improved performance of the system. The final system has N.A. of 0.15 and image field diameter 3.3 mm, and has the diffraction-limited performance for KrF eximer laser beam.

• Horticultural Science & Technology
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• v.28 no.4
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• pp.672-677
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• 2010

A duplex PCR method was developed to detect a transformation vector pSPB130 used in the development of a genetically modified (GM) rose plant. To detect a GM rose plant, the anthocyanin synthase ($ANS$) was used as an endogenous reference gene of rose in PCR detection. The primer pair RHANS-KF/KR producing 107 bp amplicon was used to amplify the $ANS$ gene and no amplified product was observed in any of the 9 different plants used as a template. The primer pair GMRH-KF/KR was designed to amplify the junction sequence between 35S promoter and flavonoid 3',5'-hydroxylase ($F3^{\prime}5^{\prime}H$) gene in pSPB130. The detection limit of the duplex PCR method is approximately 0.5%. This result indicates that this duplex PCR method could be useful for monitoring unauthorized GM rose in Korea.

• 대한방사선방어학회:학술대회논문집
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• 2011.04a
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• pp.178-179
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• 2011