• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.63-63
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• 1999

The stability of hydrogenated amorphous silicon (a-Si:H) films under the light soaking are very important since the applications of a-Si:H films are solar cells, color sensors, photosensors, and thin film transistors(TFTs). We found the changes of the electric conductivity and the conductivity activation energy (Ea) of a-Si:H films by argon radical annealing. The deposition rate of a-Si:H films depends on the argon radical annealing time. The optical band gap and the hydrogen contents in the a-Si:H films are changes along the argon radical annealing time. We will discuss the microscopic processes of argon radical annealing in a-si:H films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.245-245
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• 2004

• 복식
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• 제50권8호
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• pp.177-198
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• 2000

The major purpose of this study is to obtain the evident and visual data about the changes of Korean dress with a socio-cultural context through dress depicted in the Korean films since the 1960s. For this purpose, after were Korean socio-cultural background including the history of Korean films and mass fashion trends reviewed, total fifteen Korean films by ten year were selected on the basis of contemporaneity popularity, and fashionability, and analyzed with the data reviewed before. And the results can be summarized as follows : Dress in the Korean films of the 1960s shows sporty casual took influenced by western style, with the popularity of young fashion and youth film. The typical styles are sac dress and mini skirt fur women, and suit with American silhouette for men. Unisex mode including slim T-shirts and blue jeans with European silhouette supt appears mainly in the Korean films of the 1970s, with the change of sex roles and mass fashion trend. Dress in the Korean films of the 1980s is characterized by bold silhouette and decorative details. with the boom of erotic metro-drama and luxurious fashion trend, such as padded jacket, X silhouette ensemble, brig look coat for women, and American style suit for men. Dress in the Korean films of the 1990s shows the rapid cycle of fashion with the increase of casual wear, reflecting the popularity of romantic comedy film and various socio-cultural circumstances. As a result, the current of dress depleted in the Korean films since the 1960s is summarized as the cycle of fashion accelerated, the similarity between men's and women's wear, and the increase of sporty casual wear. Also, dress in the films reflects effectively the socio-cultural context related to fashion except for especially emphasizing characters in films.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 춘계학술대회논문집
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• pp.99-104
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• 2003

TiN coated films show a good mechanical properties, high thermal properties and wear, erosion and corrosion resistance and are widely used as a coating materials in tools, ornaments, parts and semiconductors. In spite of these good properties, the fracture of TiN coated films occur during use. The fracture of TiN thin films is related to their microstructure. Especially, the life of TiN coated layer is related to the texture of the TiN films. One researcher suggested that the corrosion and erosion resistance of the TiN thin films is related to a uniform and dense structure of films. In this study, we studied the relationships between textures and friction coefficient, erosion and corrosion in TiN coated films. The flatness of (115) texture surface of TiN thin films is flatter than that of (111) texture surface. The friction coefficient of (115) texture surface of TiN thin films is similar with that of (111) texture surface. The wear resistance of (115) texture surface of TiN thin films is better than that of (111) texture surface. The erosion and corrosion resistance of (115) texture surface of TiN thin films is better than that of (111) torture surface. As well as texture, the wear, erosion and corrosion of TiN thin films has to consider defects such as pinholes, cracks, surface roughness and open columnar structure. The life of TiN coated products is influenced by the properties of wear, erosion, and corrosion resistance of TiN thin films and is related to texture of TiN coated films, density of pinholes and cracks, density of structure, and surface flatness.

• 한국세라믹학회지
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• 제43권11호
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.242-245
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• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.169-172
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• 2009

The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

• Journal of Magnetics
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• 제10권4호
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• pp.145-148
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• 2005

Effect of vacuum annealing on the microstructures and magnetic properties of $Fe_{84}Si_6B_{10}$ films has been investigated as a function of annealing temperature. X-ray diffraction and transmission electron microscopy were employed to analyze crystallization behavior of the films. Permeability of the films was measured at various frequencies by one-turn coil method. When the films were annealed below 673 K, the coercivity of the films did not change a lot (${\~}$1500 A/m) although the grain size of a crystalline phase in the partially crystallized films increased gradually up to about 16 nm. It then increased rapidly as the films became almost fully crystalline mostly with $\alpha$-(Fe,Si) phase at and above 723 K. On the other hand, the electrical resistivity of the films decreased monotonically with the increase of annealing temperature. The permeabilities of the films annealed at 473${\~}$673 K were all over 1000, showing the optimum value of 3500 at 523 K, and almost constant up to 300 MHz. However, those of the as-deposited and fully crystallized films were lower than 1000 and unstable at the same frequency range.

• Journal of Pharmaceutical Investigation
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• 제32권1호
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• pp.1-6
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• 2002

The mucoadhesive characteristics of [P(AA-co-PEGMM)] films by estimating the glass transition temperature $(T_g)$, analyzing surface energy and studying FT-IR was previously reported. In this study, the possibility of buccal mucoadhesive dosage form of [P(AA-co-PEGMM)] films by mucoadhesive force measurements and dissolution tests were also investigated. Mucoadhesiveness of [P(AA-co-PEGMM)] films was compared with cr-PAA and cr-PEGMM films crosslinked with 3% ethyleneglycol dimethacrylate (EGDMA). The buccal mucoadhesive force of [P(AA-co-PEGMM)] films increased with increasing content of PEGMM. [P{AA-co-PEGMM (18 mole%)}] films showed a significantly greater mucoadhesiveness than cr-PAA and cr-PEGMM films. The mucoadhesive force measured in normal saline (pH 5.0) was higher than that measured in phosphate buffer (pH 6.8) because of the pH dependence of hydrogels with carboxyl ions within the PAA. Moreover, the mucoadhesive force of [P{AA-co-PEGMM (18 mole%)}] films was at maximum after 2 hr attachment of buccal mocosa and it was maintained over $1\;N/cm^2$ for up to 10 hr. In dissolution studies, the release of butorphanol tartrate from [P(AA-co-PEGMM)] films increased with increasing PEGMM content, and films prepared with 18 mole% PEGMM gave almost zero order release kinetics.

• 한국재료학회지
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• 제31권11호
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• pp.649-656
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• 2021

K_0.5Bi_0.5TiO₃ (KBT) thin films were prepared by sol-gel processing for future use in piezoelectric generators. It is believed that the annealing temperature of films plays an important role in the output performance of piezoelectric generators. KBT films prepared on Ni substrates were annealed at 500 ~ 700 ℃. Tetragonal KBT films were formed after annealing process. As the annealing temperature increased, the grain size of KBT films increased. KBT thin films show piezoelectric constant (d₃₃) from 23 to 41 pC/N. The increase of grain size in KBT films brought about output voltage and current in the KBT generators. Also, the increase in the displacement of specimens during bending test resulted in increases in output voltage and current. Although KBT generators showed lower output power than those of generators prepared using NBT films, as reported previously, the KBT films prepared by sol-gel method show applicability as piezoelectric thin films for lead-free nano-generators, along with NBT films.