• Journal of Advanced Marine Engineering and Technology
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• 제27권1호
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• pp.134-144
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• 2003

Reactive diffusion couples between Fe-5.8at.%Si and (Si wafer, $FeSi_2$, or FeSi alloy) were heat-treated at 1423k. The only layer of $Fe_3Si$ phase was formed in each diffusion couple. The width of $Fe_3Si$ layer was proportional to square root of diffusion time in each kind of diffusion couple. Growth rate of $Fe_3Si$ layer was relied on the concentration of Si in the supplied source of Si atoms. Interdiffusion coefficient of $Fe_3Si$ has been determined from the derived relation between growth rate constant and interdiffusion coefficient in this work. It was shown that the behavior of Kirkendall's void in $Fe_3Si$ layer was not affected by the kind of Si source. But solid solution $\alpha$ was formed in the diffusion couple between Fe-5.8 at.%Si and $Fe_3Si$ alloy. Kirkendall's voids in diffusional $\alpha$ were neglectively smaller than the case of $Fe_3Si$ phase growth.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1295-1300
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• 2008

During the manufacturing and the service life of Au-Al wire bonded electronic packages, the ball bonds experience elevated temperatures and hence accelerated thermal diffusion reactions that promote the transformation of the Au-Al phases and the IMC growth. In this paper, the IC under high temperature storage (HTS) tests at $175^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ are meticulously investigated. Thermal exposure resulted in the IMC growth, Kirkendall void and the crack of the Au-Al phases. The crack propagation occurs resulting in the failure of the Au-Al ball bonds. As the IC was exposed at the high temperature, decreased in the lifetime.

• Korean Chemical Engineering Research
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• 제56권6호
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• pp.819-825
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• 2018

본 연구는 ${\alpha}-Fe_2O_3$ 중공입자로 구성된 다공성 1차원 나노구조체를 전기방사 공정 및 두단계의 후 열처리 과정을 통해 주형법과 커켄달 효과를 동시 적용하여 합성했다. 열처리 과정 중, 수 nm의 치밀한 Fe 금속입자는 커켄달 효과에 의해 중공구조를 갖는 ${\alpha}-Fe_2O_3$ 입자로 최종 변환되었다. 또한, 전기방사 용액에 첨가한 PS 나노비드는 첫 열처리 과정 중 분해되어 구조체 내 수많은 기공을 형성, 환원 및 산화를 위한 가스들이 구조체 내부로 원활히 침투될 수 있는 역할을 했다. 최종 생성물인 ${\alpha}-Fe_2O_3$ 중공입자로 구성된 다공성 1차원 구조체를 리튬 이차전지의 음극활물질로 적용한 결과, $1.0A\;g^{-1}$의 높은 전류밀도에도 불구하고 30 사이클 후 $776mA\;h\;g^{-1}$의 높은 방전 용량을 나타냈다. 이와 같은 우수한 리튬 저장특성은 본 구조체를 구성하는 중공형 ${\alpha}-Fe_2O_3$ 입자와 입자들 사이의 나노기공으로부터 기인한 결과이다. 본 연구에서 제안한 중공 입자로 구성된 다공성 1차원 나노구조체 합성 방법은 다양한 전이금속 화합물 조성에 적용 가능하므로 에너지 저장 분야를 포함한 여러 분야에 응용 가능하다.

• 한국재료학회지
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• 제11권1호
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• pp.34-38
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• 2001

Fe-28%Al($Fe_3Al$)과 Fe-28%Al-4%Cr($Fe_3Al-4Cr$) 금속간화합물을 대기중 1073, 1273, 1473k의 온도에서 최고 17일까지 장시간 산화시켰다. $Fe_3Al-4Cr$의 산화저항은 근본적으로 $Fe_3Al$과 거의 비슷하거나, 약간 우수하였다. $Fe_3Al$ 위에 형성된 산화물은 거의 순수한 ${\alpha}-AL_2O_3$로만 구성되어 있었으며, $Fe_3Al-4Cr$ 위에 형성된 산화물은 약간의 Fe와 Cr 이온이 고용된 ${\alpha}-AL_2O_3$로 구성되어 있었다. 외부산화막을 형성하기 위해 모재원소의 외부확산에 의해 산화물-모재 계면에는 Kirkendall 기공이 존재하였다. $Fe_3Al(-4Cr)$ 표면에 형성된 산화막은 1273k가지는 비교적 얇고 치밀하였으나, 1473k에서 산화막의 박리와 함께 상대적으로 큰 무게증가가 발생하였다.

• 한국분말재료학회지
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• 제29권3호
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• pp.213-218
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• 2022

This study investigates the interfacial reaction between powder-metallurgy high-entropy alloys (HEAs) and cast aluminum. HEA pellets are produced by the spark plasma sintering of Al_0.5CoCrCu_0.5FeNi HEA powder. These sintered pellets are then placed in molten Al, and the phases formed at the interface between the HEA pellets and cast Al are analyzed. First, Kirkendall voids are observed due to the difference in the diffusion rates between the liquid Al and solid HEA phases. In addition, although Co, Fe, and Ni atoms, which have low mixing enthalpies with Al, diffuse toward Al, Cu atoms, which have a high mixing enthalpy with Al, tend to form Al-Cu intermetallic compounds. These results provide guidelines for designing Al matrix composites containing high-entropy phases.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).