• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.685-688
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• 2008

Mini-LVDS has been widely used for high speed data transmission because it provides low EMI and high bandwidth for display driver. In this paper, a Mini-LVDS output buffer with LTPS TFT process is presented which provides sufficient performance in the presence of large variation in the threshold voltage and mobility and kink effect.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.759-762
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• 2006

A simple SPICE model for the description of the on-current of low-temperature poly-silicon thin film transistors is proposed. By employing constant mobility, $V_GS$ dependent alpha parameter, and exponential kink effect, very good agreements between the model and measurement were obtained.

• ETRI Journal
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• 제4권1호
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• pp.3-8
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• 1982

성장된 GaInAsP/InP DH wafer로부터 상온에서 duty 5%까지 Pulse 동작이 가능한 전면전극(broad contact) 및 stripe 구조 LD(711이저 다이오드)를 제작하였다. 또 이렇게 제작된 LD의 I-V특성, 1-L 특성 및 발진파장 등을 조사하기 위해 LD 구동회로 및 Ge 태양전지와 Ge-APD를 이용한 광 검출회로를 제작하였다. 이들을 이용해 제작한 LD의 특성을 조사한 결과 stripe 구조 LD인 경우 발진개시전류($I_th$)가 900mA, 발진파장이 $1.29\mum$, 파장반치폭(FWHM)이 $60\AA$였으며 $1.33I_th$까지 kink 없이 동작이 가능하였다.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• 제25권3호
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• pp.132-148
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• 2021

The modified F-expansion method is used to construct analytical solutions of the foam drainage equation with time- and space-fractional derivatives. The conformable derivatives are considered as spacial and temporal ones. As a result, some analytical exact solutions including kink, bright-dark soliton, periodic and rational solutions are obtained.

• 펄프종이기술
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• 제30권2호
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• pp.47-54
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• 1998

Refining is one of the most important processes of fiber treatment that provides optical and physical properties of final paper products. The evaluation method of refining progress is usually freeness (CSF) or wetness (SR) test because of its rapidity and convenience. However, there are some deficiencies in using freeness or wetness test to evaluate pulp fibers accurately because its results are more influenced by fines contents than extent of fibers treatment. The objective of this study is to show the deficiency of wetness in evaluating the refining process. For this, beating is done by varying the beating load. Handsheets are made after beating until 25 and $32^{\circ}C$ SR, and then paper properties are measured. Refined fibers are analyzed by fiber length, fines contents, curl, kink, WRV, and zero-span tensile strength. The results show that longer beating time is required to reach the same wetness at lower beating load. There are differences in the average fiber length, distribution curve of fiber length, fines contents, curl, kink, WRV of long fiber fraction, drainage time, and zero-span tensile strength of rewetted sample at different beating load. At the low beating load in the same wetness, apparent density, breaking length, burst strength, and tear strength are higher, while opacity and air permeability are lower than those of the high beating load. Using Page s equation, which shows the relationship among tensile strength, intrinsic fiber strength, and interfiber bonding strength, interfiber bonding strength is calculated and analyzed to explain final paper properties. At $25^{\circ}C$ SR, interfiber bonding strength is only slightly higher at 2.5kgf beating load, while the intrinsic fiber strength is substantially higher. At $32^{\circ}C$ SR, intrinsic fiber strength is a little bit higher at 2.5kgf beating load, and interfiber bonding strength is remarkably higher than those of 5.6kgf beating load. These results can be used to explain the different properties of the final paper at selected beating loads.

• 자원환경지질
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• 제16권2호
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• pp.111-123
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• 1983

The studied area is situated in tho southern part of the Ogcheon fold belt, where the "Ogcheon Group" is widespread with Jurassic and Cretaceous intrusions. The regional stratigraphy may be divided into three formations, the lower pebble bearing phyllitic, the middle dark grey phyllitic, and the upper black phyllitic formations. For the purposes of the present study, the area has been partitioned to three structural subareas based on major fold axes and fault line. The main subjects of the research have been discussed from two different points, multiple deformation and minor-micro fold styles. The former is analyzed by pebble elongation, folding and lineation in a pebbly formation as well as schistosity, crenulation cleavage and crenulated lineation in the phyllitic formation. The later describes the characteristic features of fold style in each formation and structural subarea. Although minor fold axes within broad pelitic rocks usually tend to trend northeast and to plunge northward, most of these were probably formed by two stages, first a similar fold phase and second a kink fold phase. Measured structural elements indicate that crenulation cleavage in phyllite formed parallel to fold axes of folded pebble followed a NE phase of first deformation and a fold axes of pebbles diagonal to bedding of phyllite are represented by a NW phase of a second deformation. Microscopically, quartz and mica grains form a micro fold enabling one to establish tectonic levels which occur in different deformation modes in each stratigraphic sequence. Microtextures such as crenulation cleavage, kink band, aggregate band of mica and pressure shadows of porphyroblast of quartz related to qarnet and staurolite may suggest the time relation of crystallization and tectonism. The result of this study may conform that three deformation phase, NE first phase-NE second phase-NW phase, occurred in the area.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권12호
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• pp.761-767
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• 1999

Poly-Si TFTs(polycrystalline silicon thin film transistors) fabricated on a low cost glass substrate have attracted a considerable amount of attention for pixel elements and peripheral driving circuits in AMLCS(active matrix liquid crystal display). In order to apply poly-Si TFTs for high resolution AMLCD, a high operating frequency and reliable circuit performances are desired. A new poly-Si TFT with CLBT(counter doped lateral body terminal) is proposed and fabricated to suppress kink effects and to improve the device stability. And this proposed device with BC(buried channel) is fabricated to increase ON-current and operating frequency. Although the troublesome LDD structure is not used in the proposed device, a low OFF-current is successfully obtained by removing the minority carrier through the CLBT. We have measured the dynamic properties of the poly-Si TFT device and its circuit. The reliability of the TFTs and their circuits after AC stress are also discussed in our paper. Our experimental results show that the BC enables the device to have high mobility and switching frequency (33MHz at $V_{DD}$ = 15 V). The minority carrier elimination of the CLBT suppresses kink effects and makes for superb dynamic reliability of the CMOS circuit. We have analyzed the mechanism in order to see why the ring oscillators do not operate by analyzing AC stressed device characteristics.

• Journal of Korean Vacuum Science & Technology
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• 제4권4호
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• pp.102-106
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• 2000

We report scanning force microscope (SFM) observations of enhanced calcite dissolution in aqueous solution due to mechanical stimulation induced by the SFM tip. Images and mechanical treatment were performed in saturated ($\geq$ 60 ${\mu}{\textrm}{m}$) CaCO$_3$ solution adjusted to pH~9. Small area scans of monolayer steps significantly increased the step velocity in the scanned area (in the direction corresponding to dissolution) when the applied contact force is above about 160 nN fer the tips employed. The step velocity could be increased at least an order of magnitude by scanning at even higher contact forces (e.g.,270nN). This enhancement is a function of step orientation relative to the calcite lattice. Indentations near preexisting steps also locally enhance the step velocity. We present evidence that the higher dissolution rates are caused by stress-induced increases in the rate of double-kink nucleation.

• 전자공학회논문지A
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• 제29A권11호
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• pp.91-96
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• 1992

The technology of LOCOS(LOCal Oxidation of Silicon) was used to form the island of SOI film. After this, the SOI film was recrystallized by CO$_2$ laser and metal gate nMOSFETs were fabricated on this SOI film and their electrical characteristics were measured. The kink effect was not nearly observed and edge channel effect was found in the SOI nMOSFETs. The threshold voltage was about 0.5V, the electron mobility was about 340cm$^2$V$\cdot$S and an ON/OFF ratio above 10$^{5}$ was obtained at V_{DS}$=4V. The electrical characteristics were improved by laser recrystallization.

• 한국결정성장학회지
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• 제9권6호
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• pp.558-562
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• 1999

승화 성장법을 적용하여 성장된 6H-SiC 결정에 대하여, KSV 이론과 성장 계면에서의 미사면(vicinal plane)상의 step 성장 양상을 근거로 하여, 성장 계면에서의 물질 흡착의 거동과 결함의 생성간의 상호 관계를 고찰하고, micropipes와 내부 결함의 생성 원인을 논하였다. micropipe와 면결함등의 결함들은 ledge 혹은 kink에 침입된 불순물에 의하여 step 성장의 진행이 방해받는 부분에 형성되었다. 따라서, SiC 결정에서 이들 결함의 생성은 SiC 결정 성장 계면에 형성되는 결정학적 step 성장면과 분자 또는 원자들의 격자 이동에 관련이 있음을 알 수 있었다.