• Proceedings of the Korea Society of Environmental Toocicology Conference
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• 1996.12a
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• pp.62-62
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• 1996

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.61-64
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• 2011

In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4 KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of $800{\sim}900^{\circ}C$ with $O_2$ ambient using thermal furnace. The junction depth in about $0.35{\sim}0.6{\mu}m$ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.303-306
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• 2005

We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

• Mass Spectrometry Letters
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• v.7 no.4
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• pp.111-115
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• 2016

Glycerol was identified and isolated from endogenous interferences during analysis of human urine using high-resolution mass spectrometry (HRMS) for doping control. Urinary sample preparation was simple; the samples were diluted with an organic solvent and then analyzed using a liquid chromatography-mass spectrometry ("dilute and shoot" method). Although the interfering ion peaks were observed at the similar retention time of glycerol, the inference could be identified by isolation with HRMS and further investigation. Thus, creatinine was identified as the endogenous interference for glycerol analysis and it also caused ion suppression resulting in the decrease of glycerol signal. This study reports the first identification and efficient isolation of endogenous interferences in human urine for "dilute and shoot" method. The information about ion suppression could be novel to prevent overestimation or a false result for antidoping analysis.

• Mass Spectrometry Letters
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• v.7 no.3
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• pp.55-63
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• 2016

Growth hormone (GH)-releasing peptides (GHRPs) and GH secretagogues (GHSs) are listed in the World Anti-Doping Agency (WADA) Prohibited List. In the present study, we developed and validated a method for the simultaneous analysis of seven GHRPs (alexamorelin, GHRP-1, -2, -4, -5, -6, and hexarelin) and three GHSs (anamorelin, ibutamoren, and ipamorelin) in human urine. Method validation was performed at minimum required performance levels specified by WADA technical documents (2 ng/mL) for all substances, and the method was validated with regard to selectivity (no interference), linearity (R2 > 0.9986), matrix effects (50.0%-141.2%), recovery (10.4%-100.8%), and intra- (2.8%-16.5%) and inter-day (7.0%-22.6%) precisions. The limits of detection for screening and confirmation were 0.05-0.5 ng/mL and 0.05-1 ng/mL, respectively.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.120-123
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• 2014

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Mass Spectrometry Letters
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• v.8 no.2
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• pp.39-43
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• 2017

Meldonium is a drug for treating ischemia by expanding the arteries but it can also enhance the performance of sports players. The World Anti-Doping Agency (WADA) has included it in the list of prohibited substances since 2016. Meldonium is one of the challenging substances for anti-doping testing because it is difficult to recover by general liquid-liquid or solid phase extraction due to its permanent charge and high polarity. Therefore, high-performance liquid chromatography (HPLC) is currently used by injecting a diluted urine sample (known as the "dilute-and-shoot" strategy). There is no loss of target compounds in the extraction/cleanup procedure but its high matrix effect could interfere in their separation or detection from the endogenous urinary compounds. We report a single method using high-resolution mass spectrometry that can be used for both screening and confirmation, which follows the "dilute-and-shoot" strategy. In this method, the endogenous compounds' interfering peaks in the mass spectrum are separated at a high resolution of FWHM 140,000, and the results are suitable for substance detection following the WADA guidelines. The interferences in the obtained mass spectrum of the urine matrix are identified as acetylcholine, lysine, and glutamine by further analysis and database searching. Validation of the method is performed in routine anti-doping testing, and the limit of detection is 50 ng/mL. This method uses simple sample preparation and a general reverse phase HPLC column, and it can be easily applied to other substances.

• Proceedings of the PSK Conference
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• 2001.04a
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• pp.221.2-222
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• 2001

• Journal of Digital Convergence
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• v.16 no.3
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• pp.553-560
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• 2018

This study aimed to quantify the attitude toward doping among handball players and to identify the influence of players' demographic information, knowledge of doping, education of anti-doping on the attitudes toward doping. 385 elite handball players (193 adolescent players, 165 adult players) were participated in this study and filled in the questionnaire about demographic information, knowledge of doping, education of anti-doping and Performance Enhancement Attitude Scale (PEAS). Collected data were analyzed by Stepwise multiple linear regression. Adult players were more generous about doping than adolescents, and, adolescent players' attitudes toward doping were influenced by their gender and age. In adults, attitudes toward doping were related with only the gender. These results would be useful information to develop the effective anti-doping strategy for handball play.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.763-769
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• 2012

We investigated the width (N) dependence on the magnetization of N-ZSiC NR with electron and hole doping on the basis of systematic DFT calculations. The critical values of the upper and down critical concentration to give the maximum and zero magnetic moment at edge Si/C atoms by electron/hole doping ($x_{up,e}$, $x_{down,e}$, $x_{up,h}$, and $x_{down,h}$) depend on the width of N-ZSiC NR. Moreover, due to $x_{up,e}\;{\neq}\;x_{up,h}$ and $x_{down,e}\;{\neq}\;x_{down,h}$, the electron and hole doping effect are asymmetry, i.e, the critical electron doping value ($x_{down,e}$) is smaller than the critical hole doping value ($x_{down,h}$) and is almost independent of the width of NZSiC NR though the other critical values of the electron and hole doping that influence the magnetization of N-ZSiC NR depend on the width. It was also found that at $x_{down,e}$ or $x_{down,h}$ doping, the N-ZSiC NR turns into unusual non-magnetic metallic state. The magnetic behavior was discussed based on the band structures and projected density of states (PDOS) under the effect of electron/hole doping.