• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.6
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• pp.682-687
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• 2004

Y-junction microchannels are widely used as a flew mixer. Fluids are entered from two branch channels and merged together at a combined channel. In this study, we suggest a simple method to create the fluid digitization using flow instability phenomena. Two immiscible liquids (water/oil) are infused continuously to each Y-junction inlets. Because of the differences in fluid and flow properties at the interface, oil droplet is formed automatically followed by flow instability. In order to clarify the hydrodynamic aspects involved in oil droplet formation, a quantitative flow visualization study has performed. Highly resolved velocity vector fields are obtained by a micro-PIV technique, so that detail flow structures around the droplet are illustrated. In this study, fluorescent particles were mixed with water only for visualization of oil droplet and velocity field measurement in water flow.

• 한국전산유체공학회:학술대회논문집
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• 2008.03a
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• pp.19-26
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• 2008

From numerical point of view on flow network system analyses, stagnation properties are not preserved along streamlines across geometric discontinuities. Hence, GJM and DTM using ghost cell and thermodynamic relations are developed to preserve the stagnation enthalpy for the boundaries, such as the interfaces between junction and branches and the interface between two pipes of different cross-sections in serial pipelines. Additionally, the resolving power and efficiencies of the 2nd order Godunov type FV schemes are investigated and estimated by the tracing of the total mechanical energy during calculating rapid transients. Among the approximate Riemann solvers, RoeM is more suitable with the proposed boundary treatments especially for junction than Roe's FDS because of its conservativeness of stagnation enthalpy across geometric discontinuities.

• 한국전산유체공학회:학술대회논문집
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• 2008.10a
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• pp.19-26
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• 2008

From numerical point of view on flow network system analyses, stagnation properties are not preserved along streamlines across geometric discontinuities. Hence, GJM and DTM using ghost cell and thermodynamic relations are developed to preserve the stagnation enthalpy for the boundaries, such as the interfaces between junction and branches and the interface between two pipes of different cross-sections in serial pipelines. Additionally, the resolving power and efficiencies of the 2nd order Godunov type FV schemes are investigated and estimated by the tracing of the total mechanical energy during calculating rapid transients. Among the approximate Riemann solvers, RoeM is more suitable with the proposed boundary treatments especially for junction than Roe's FDS because of its conservativeness of stagnation enthalpy across geometric discontinuities.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.273-273
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• 2010

Recently, extensive research on hetero-junction arrays has been reported owing to its unique band gaps dissimilar to that of homo-junctions. These hetero-junction devices can be used in laser, solar cells, and various sensors. We report on the facile method to fabricate SWCNTs/SnO2 nanowires hetero-junction arrays on flexible polyimide substrate. Each SWCNT field effect transistor (FET) and SnO2 nanowire FET exhibits the purely p- and n-type charactersistics with ohmic contact properties. Such formed pn-junctions showed rectification behaviors reproducibly with a rectification ratio of ${\sim}3{\times}103$ at 1 V and ideality factors about 12. The pn-junctions also showed a good gate modulation behavior.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1435-1438
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• 1994

The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

• Journal of Surface Science and Engineering
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• v.45 no.5
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• pp.188-192
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• 2012

The hetero junction on dielectrics and ferrite for LTCC was prepared by using NiCuZn ferrite. The shrinkage behaviour of ferrite tapes in combination with a dielectric tape was investigated. The characteristics of NiCuZn ferrite were investigated using XRD (X-ray diffractometer), Dilatometer, FE-SEM (Field emission scanning electron microscope), EDS (Energy dispersive spectrometer). NiCuZn ferrite calcined at $700^{\circ}C$ had a good apparent density and initial permeability of magnetic properties. The shrinkage rate of the NCZF700 ferrite and dielectric material was similar. The multilayer revealed dense, uniform morphologies with excellent interface quality. Diffusion of hetero junction such as dielectric and ferrite was not occuring at $900^{\circ}C$.

• Current Photovoltaic Research
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• v.10 no.3
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• pp.84-89
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• 2022

c-Si solar cells currently account for more than 90% of the solar energy market. Research on tandem junction solar cells to overcome efficiency limitations is drawing attention at a time when new technologies are being developed to secure the price competitiveness of silicon solar cells. Among several candidate materials for silicon-based tandem solar cells, perovskite has recently been studied as it is suitable for the ease of process as well as for its properties as a tandem solar cell material. In this study, we want to review the research trends and technology limitations of 2-T Perovskite/SHJ tandem junction solar cells.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.14-21
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• 2004

It is essential to increase the switching speed of power devices to reduce the energy loss because high frequency is commonly used in power device operation these days. In this work electron irradiation has been conducted to reduce the lifetime of minority carriers and thereby to increase the switching speed of a$p^+- n^-$ junction diode. Effects of electron irradiation on the electrical properties of the diode are reported The switching speed is effectively increased. Also the junction leakages and the forward voltage drop which are anticipated to increase are found to be negligible in the $p^+- n^-$ junction diodes irradiated with the optimum energy and dose. The analysis results of DLTS and C-V profiling indicate that the defects induced by electron irradiation in the silicon substrate are donor-like ones which have the energy levels of 0.284 eV and 0.483 eV. Considering all the experimental results in this study, it might be concluded that electron irradiation is a very useful technique in improving the switching speed and thereby reducing the energy loss of $p^+- n^-$ junction diode power devices.

• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.6-9
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• 2021

Heterostructures fabricated by various combinations of van der Waals (vdW) materials enable us to investigate disorder-free physical properties and realize novel functional devices. Superconducting vdW junctions have attracted a lot of attention because of its simple structure without a barrier layer. In superconducting vdW junction, without extra fabrication effort, a natural barrier can be formed, whose character is sensitive to distance and angle of lattice between two superconducting vdW materials. Using high-quality single crystals and the dry transfer technique, we fabricated the vertically stacked NbSe₂/NbSe₂ and FeSe/FeSe vdW junctions and investigated their Josephson junction properties. We found that in the FeSe junctions, Josephson coupling is extremely sensitive to the fabrication conditions, in contrast to the NbSe₂ junctions. We attributed this distinct character of the FeSe junctions to surface instability and small Fermi surface of FeSe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.