• Journal of Magnetics
• /
• 제14권1호
• /
• pp.11-14
• /
• 2009

We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권1호
• /
• pp.34-39
• /
• 2006

In high-voltage devices such as thyristor, beveling is mostly used junction termination method to reduce the surface electric field far below the bulk electric field and to expand the depletion region thus that breakdown occurs in the bulk of the device rather than at the surface. However, coating material used to protect the surface of the device contain so many charges which affect the electrical characteristics of the device. And device reliability is also affected by this charge. Therefore, it is needed to analyze the effect of surface charge on electrical characteristics of the device. In this paper, we analyzed the breakdown voltage and leakage current characteristics of the thyristor as a function of the amount of surface charge density. Two dimensional process simulator ATHENA and two-dimensional device simulator ATLAS is used to analyze the surface charge effects.

• ETRI Journal
• /
• 제26권6호
• /
• pp.669-672
• /
• 2004

To improve the operation error caused by the thermal fluctuation of electrons, we propose a novel single-electron pass-transistor logic circuit employing a multiple-tunnel junction (MTJ) scheme and modulate a parameters of an MTJ single-electron tunneling device (SETD) such as the number of tunnel junctions, tunnel resistance, and voltage gain. The operation of a 3-MTJ inverter circuit is simulated at 15 K with parameters $C_g=C_T=C_{clk}=1\;aF,\;R_T=5\;M{\Omega},\;V_{clk}=40\;mV$, and $V_{in}=20\;mV$. Using the SETD/MOSFET hybrid circuit, the charge state output of the proposed MTJ-SETD logic is successfully translated to the voltage state logic.

• Journal of Magnetics
• /
• 제7권3호
• /
• pp.101-105
• /
• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• 한국전기전자재료학회논문지
• /
• 제22권11호
• /
• pp.905-909
• /
• 2009

The new Junction Field Effect Transistors (JFETs) with Silicon-germanium (SiGe) layers is investigated. This structure uses SiGe layer to prevent out diffusion of boron in the channel region. In this paper, we report electrical properties of SiGe JFET measured under various design parameters influencing the performance of the device. Simulation results show that out diffusion of boron is reduced by the insertion SiGe layers. Because the SiGe layer acts as a barrier to prevent the spread of boron. This proposed JFET, regardless of changes in fabrication processes, accurate and stable cutoff voltage can be controlled. It is easy to maintain certain electrical characteristics to improve the yield of JFET devices.

• 산업경영시스템학회지
• /
• 제32권3호
• /
• pp.118-126
• /
• 2009

This research investigates the problem of minimizing setup costs in resequencing jobs having first-in, first-out(FIFO) constraints at conveyorized production or assembly systems. Sequence changing at conveyor junctions in these systems is limited due to FIFO restriction. We first define the general problem of resequencing jobs to workstations satisfying precedence relationships between jobs(Generalized Sequential Ordering Problem, GSOP). Then we limit our scope to FIFO precedence relationships which is the conveyor selection problem at a diverging junction(Diverging Sequential Ordering Problem, DSOP), modeling it as a 0-1 integer program. With the capacity constraint removed, we show that the problem can be modeled as an assignment problem. In addition, we proposed and evaluated the heuristic algorithm for the case where the capacity constraint cannot be removed. Finally, we discuss the case study which motivated this research and numerical results.

• Journal of Information Display
• /
• 제13권1호
• /
• pp.37-42
• /
• 2012

An empirical functional form was suggested for the analysis of the emission spectrum of high-power light-emitting diode (LED) consisting of a sharp blue peak from the LED chips and a broad yellow peak from the phosphor layer. The peak positions, half widths, shape parameters, and amplitudes of these two peaks were reliably obtained as a function of the temperature, and the results were discussed qualitatively in relation with the junction temperature. The adoption of an inert liquid was found to have significantly reduced the LED temperature and the color shift of the emitted light. The phenomenological approach used in this study may be helpful in the simulation of the LED spectrum under various thermal conditions, and may thus be helpful in the improvement of the device performance.

• 전자공학회논문지D
• /
• 제36D권4호
• /
• pp.70-76
• /
• 1999

Punchthroush 원통형 접합의 항복전압에 대한 해석적 모델을 에피층의 두께와 nonpunchthrough 원통형 접합의 항복시 임계공핍영역폭이 함수로 제안하였다. 이 해석적 모델에서의 모든 거리변수와 전계 및 전위식을 정규화된 형태로 사용하므로써 항복전압을 소자의 물리적 parameter에 관계없이 쉽게 결정할 수 있게 하였다. 제안된 모델의 계산결과를 2차원 소자 Simulation Program인 MEDICI를 사용하여 얻은 결과와 비교하여 매우 잘 일치함을 보였다.

• 마이크로전자및패키징학회지
• /
• 제23권4호
• /
• pp.49-55
• /
• 2016

Nowadays there are magnetic sensors in a wide variety of equipment such as computers, cars, airplanes, medical and industrial instruments. In many of these applications the magnetic sensors offer safe and non-invasive means of detection and are more reliable than other technologies. The electric current in a conductor generates a magnetic field detected by this type of sensor. This work aims to define a package dedicated to an electrical current sensor using a MTJ (Magnetic Tunnel Junction) as a sensing device. Four different proposals of packaging, three variations of the chip on board (CoB) package type and one variation of the thin small outline package (TSOP) were analyzed by COMSOL modeling software by simulating a brad range of current injection. The results obtained from the thermal and magnetic analysis has proven to be very important for package improvements, specially for heat dissipation performance.

• 전자공학회논문지A
• /
• 제31A권7호
• /
• pp.95-101
• /
• 1994

A novel concept for the analysis of planar devices with a field limiting ring(FLR) is presented which allows analytic expressions in a normalized form for the potential distributions of FLR structure. Based on the method of image charges the main and ring junctions with identical cylindrical edges are kept to be two different equipotential surfaces. The potential relations between main and ring junction of the FLR structure are compared with 2-dimensional device simulation program. MEDICI. A good accordance is found. Comparisions with experimental data reported for the optimum ring spacing and the relative improvement of the breakdowm voltages in the FLR sturcture show the validity of the concept. The normalized expressions allow a universal application regardless to the junction depths and background doping levels.