• 건축역사연구
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• 제21권5호
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• pp.7-18
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• 2012

On behalf of the royal women, SangGung(尙宮:The head of female servants in the palace) and NaIns(內人: Female servants caring for royal families in the palace) were dispatched in order to attend a funeral at the royal tomb. The NaInGaGa(內人假家) is the temporary building for SangGung and NaIns in the royal tomb. It is comprised of lodgings for them and also workrooms and warehouses to prepare ritual offering for the dead King or Queen. In the early Joseon dynasty, the NaInGaGa was utilized until a funeral at the royal tomb. Since 1674, NaInGaGa for the 3 years-period lamentation was started constructing separately. At these processes, the plan and placement of NaInGaGa was changed. This study based on the SanReungDoGam-EuiGwae (山陵都監-儀軌: The report on constructing royal tomb). The SanReungDoGam-EuiGwae written since 1800 have illustration about NaInGaGa. The illustration and explanation about NaInGaGa become a important clue that make suppose detailed space of NaInGaGa.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 춘계학술발표대회 및 제14회 신소재 심포지엄
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• pp.31.2-31.2
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• 2008

• Journal of Microbiology and Biotechnology
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• 제15권4호
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• pp.809-814
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• 2005

Gibberellins (GAs) play an important role in plant growth and development. Fifteen fungi were isolated from Physalis alkekengi var francheti plant roots, and among them, four isolates showed GA-production activity. A bioassay using waito-c rice was carried out with the culture fluid of the GA-producing fungi. The GA-producing fungi were cultured for 7 days in Czapek's liquid medium at $30^{\circ}C$, 120 rpm, under dark conditions. The culture broth was concentrated 30-fold and 10 ${\mu}l$ of that concentrate was applied to 2-leaf rice sprouts. The height of the rice seedlings treated with the culture fluid of isolate PA08 was 26 cm high, while that of the seedlings treated with the wild-type Gibberella fujikuroi was 13 cm high. As such, the plant growth-promoting activity exhibited by isolate PA08 was 2 times stronger than that exhibited by the wild-type G fujikuroi. The amounts of $GA_l,\;GA_3,\;GA_4,\;GA_7,\;GA_9,\;GA_{20}$, and $GA_{24}$ in the medium were measured using gas chromatography-mass spectrometry (GC-MS), and the quantities produced by isolate PA08 were 4.85 ng/ml, 4.79 ng/ml, 17.30 ng/ml, 6.01 ng/ml, 16.61 ng/ ml, 0.08 ng/ml, and 17.30 ng/ml, respectively. Isolate PA08 was also identified as Fusarium proliferatum KGL0401 by a genetic analysis of the nucleotide sequences of the internal transcribed spacer region of the ribosomal DNA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.41-45
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• 2003

Impurities transmuted in GaN thin film and GaN nanowires after neutron irradiation are studied in this work. The structural properties of GaN nanowires were shown using by Transmission Electron Microscope(TEM). Transmuted impurities that are expected to be doped into GaN thin film and GaN nanowires are then confirmed by photoluminescence(PL). Transmuted atom in GaN materials is Ge atom, Ge-related peaks in GaN thin film lead to emit at 2.9eV, 2.25eV. But emission bands at 2.9eV, 2.25eV are not shown in PL spectra of GaN nanowires. Our experimental results are expected to give deep impact on nano-material doping technology for the achievement of the fabrication of nano-devices.

• 한국자기학회지
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• 제20권6호
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• pp.212-215
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• 2010

비정질 Ga 박막은 벌크에 비해 높은 초전도 임계온도와 임계자기장 값을 보이나 그 특성은 불안정하여 상온에 한번 노출되면 그 초전도 특성을 잃어버리게 된다. 이 논문에서는 Ga/Al 두층 박막을 제작하여 이러한 비정질 Ga 박막의 불안정한 초전도 특성을 개선할 뿐만 아니라 기존의 스핀검출에 응용되고 있는 Al 박막을 대체할 수 있는 가능성을 연구하였다. 극초진공 분자빔박막 증착장비(UHV-MBE)를 사용하여 Ga/Al 두층 박막을 제작하고, 표면의 적절한 플라즈마 산화 처리에 의한 Ga/Al/$Al_2O_3$/Fe의 터널 접합구조를 제작하여 Ga/Al 박막의 초전도 특성을 측정하였다. 한편, Ga/Al 박막의 표면 특성은 Auger 전자 분광기를 이용하여 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.356-356
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• 2012

InGaN/GaN로 제작된 Blue chip의 파장에 따른 백색 LED의 성능 저하를 전기적, 광학적 특성을 고려하여 조사하였다. 4가지 파장으로 제작된 백색 LED Sample들은 60 mA, 75 mA, 90 mA의 주입 전류로 장 시간동안 스트레스를 주었다. 또한 형광체가 없는 상태와 있는 상태를 구분하여 패키지의 감쇠 특성을 확인하였다. Blue 피크 파장 437 nm, 주입전류 90 mA, 형광체가 있는 상태와 형광체가 없는 상태에서 패키지의 출력 광세기는 각각 20%, 36%까지 감소하였다. 이는 Blue Chip에서 출력되는 단파장이 페키지 몰드의 노화(황변)현상에 직접적인 영향을 주기 때문이다. 전기적 특성은 Blue chip의 파장영역에 의존하지 않고, 스트레스 시간에 따른 LED내부 저항이 커지는 현상을 확인하였다. 따라서 InGaN/GaN로 제작된 백색 LED의 장 수명을 얻기 위해서는 Blue chip의 출력 파장 영역과 페키지 몰드 재료 특성의 신뢰성 관계가 중요하다.

• 대한기계학회논문집A
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• 제27권1호
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• pp.158-166
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• 2003

The paper describes the development and application of advanced evolutionary computing techniques referred to as micro genetic algorithms ($\mu$GA) in the context of engineering design optimization. The basic concept behind $\mu$GA draws from the use of small size of population irrespective of the bit string length in the representation of design variable. Such strategies also demonstrate the faster convergence capability and more savings in computational resource requirements than simple genetic algorithms (SGA). The paper first explores ten-bar truss design problems to see the optimization performance between $\mu$GA and SGA. Subsequently, $\mu$GA is applied to a realistic engineering design problem in the injection molding process optimization.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2014년도 추계학술대회 논문집
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• pp.19-20
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• 2014

기존의 실리콘 반도체를 대체할 것으로 기대되는 차세대 전력 반도체인 GaN FET을 이용한 위상천이 풀브릿지 dc-dc 컨버터의 설계 및 구현에 대해 기술한다. 600W급 프로토타입 dc-dc 컨버터를 대상으로 실리콘 MOSFET와 GaN FET의 스위칭 특성 및 효율 등을 비교 분석한다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2014년도 추계학술대회 논문집
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• pp.197-198
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• 2014

본 논문에서는 Si MOSFET을 차세대 반도체인 GaN FET(Gallium Nitride Field Effect Transistor)으로의 대체 할 시 발생하는 문제점을 분석한다. 다양한 전력변환 시스템에 적용 가능한 위상 천이 풀브리지(Phase Shifted Full Bridge) DC-DC 컨버터를 대상으로 각각 Si MOSFET 및 GaN FET를 적용하고 실험을 통해 문제점을 확인 및 분석한다.