• Journal of the Korean Vacuum Society
• /
• v.16 no.5
• /
• pp.322-329
• /
• 2007

The interaction of oxygen with the ordered $Ni_3Al(111)$ alloy surface at 800 K and 1000 K has been investigated using LEED, STM, HREELS, UPS, and PAX. The clean $Ni_3Al(111)$ surface exhibits a "$2{\times}2$" LEED pattern corresponding to the ordered bulk-like terminated surface structure. For an adsorption of oxygen at 800 K, LEED shows an unrelated oxygen induced superstructure with a lattice spacing of $2.93\;{\AA}$ in addition to the ($1{\times}1$) substrate spots. The combined HREELS and the UPS data point to an oxygen chemisorption on threefold aluminum sites while PAX confirms an islands growth of the overlayer. Since such sites are not available on the $Ni_3Al(111)$ surface, we conclude the buildup of an oxygen covered aluminum overlayer. During oxygen exposure at 1000 K, however, we observe the growth of ${\gamma}'-Al_2O_3$ structure on the reordered $Ni_3Al(111)$ substrate surface. This structure has been identified by means of HREELS and STM. The HREELS data will show that at 800 K the oxidation shows a very characteristic behavior that cannot be described by the formation of an $Al_2O_3$ overlayer. Moreover, the STM image shows a "Strawberry" structure due to the oxide islands formation at 1000 K. Conclusively, from the oxygen interaction with $Ni_3Al(111)$ alloy surface at 800 K and 1000 K an islands growth of the aluminum oxide overlayer has been found.

• Korean Journal of Digital Imaging in Medicine
• /
• v.15 no.2
• /
• pp.55-61
• /
• 2013

The purpose of this study is to evaluate image blurring according to variation of the ETL and propose the clinically appropriate ETL range. SIEMENS MAGNETOM Skyra 3.0T and 20 channel head coil were used for the study. MRI phantom was kept the lines horizontally to three direction(X,Y,Z) of the coil and T1, T2 weighted images that used the fast spin echo technique acquired. The ETL with increase of 10 was applied from 10 to 80. In addition, the ETL with increase of 1 was applied in the interval statistically significant differences occurred. And T1, T2 weighted images that used the conventional spin echo technique acquired to compare image blurring of the images that used the fast spin echo technique. The slope of lattice in the images was measured using Image J 1.47v program to evaluate image blurring. And image blurring was determined by the degree of the slope. The statistical significance of both techniques was evaluated by the Kruskal-Wallis test of the SPSS 17.0v. And the correlation of the ETL and image blurring was evaluated quantitatively by regression analysis. The slope of the T1, T2 weighted images that used fast spin echo technique decreased as contrasted with conventional spin echo technique. In the result of the Kruskal-Wallis test, the T1, T2 weighted images that used fast spin echo technique made a significant difference with conventional spin echo technique. Particularly, in the Tomhane' T2 test, the T1, T2 weighted images made a significant difference from ETL 22 and 31 respectively. In the result of the regression analysis, the R-squared of the T1, T2 weighted images are 0.762 and 0.793. It is difficult to apply the long ETL in the T1 weighted image caused by the short TR and multi-slices study. Therefore, clinical impact according to variation of the ETL is very slight in the T1 weighted images. But the application of the proper ETL is demanded in T2 weighted images using the fast spin echo technique in order to prevent image blurring.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.327-327
• /
• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.1
• /
• pp.83-91
• /
• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.

• Progress in Superconductivity
• /
• v.9 no.1
• /
• pp.23-28
• /
• 2007

In order to have a superconductive connection between the wire-wound pickup coil and input coil, typically Nb terminal blocks with screw holes are used. Since this connection structure occupies large volume, large stray pickup area can be generated which can pickup external noise fields. Thus, SQUID and connection block are shielded inside a superconducting tube, and this SQUID module is located at some distance from the distal coil of the gradiometer to minimize the distortion or imbalance of uniform background field due to the superconducting module. To operate this conventional SQUID module, we need a higher liquid He level, resulting in shorter refill interval. To make the fabrication of gradiometers simpler and refill interval longer, we developed a novel method of connecting the pickup coil into the input coil. Gradiometer coil wound of 0.125-mm diameter NbTi wires were glued close to the input coil pads of SQUID. The superconductive connection was made using an ultrasonic bonding of annealed 0.025-mm diameter Nb wires, bonded directly on the surface of NbTi wires where insulation layer was stripped out. The reliability of the superconductive bonding was good enough to sustain several thermal cycling. The stray pickup area due to this connection structure is about $0.1\;mm^2$, much smaller than the typical stray pickup area using the conventional screw block method. By using this compact connection structure, the position of the SQUID sensor is only about 20-30 mm from the distal coil of the gradiometer. Based on this compact module, we fabricated a magnetocardiography system having 61 first-order axial gradiometers, and measured MCG signals. The gradiometers have a coil diameter of 20 mm, and the baseline is 70 mm. The 61 axial gradiometer bobbins were distributed in a hexagonal lattice structure with a sensor interval of 26 mm, measuring $dB_z/dz$ component of magnetocardiography signals.

• Journal of the Korean Magnetics Society
• /
• v.17 no.2
• /
• pp.60-64
• /
• 2007

Ba-Ferrite single crystals were prepared and characterized by X-ray, SEM and Mossbauer spectroscopy. The single crystal layers was cut in the c-axis and radiated to the surface by ${\gamma}-rays$ for Mossbauer spectroscopy. We found out that the spin states in Fe atoms were parallel to the ${\gamma}-rays$ direction. The temperature dependence of the hyperfine field is almost similar to that of powder samples. The crystal structure is a Magnetoplumbite without any other phases and the lattice parameters are found out with $a_0=5.892{\AA},\;b_0=5.892{\AA},\;c_0=23.198{\AA}$. $M\"{o}ssbauer$ spectrum in single crystal have 5 sets off absorption lines in each Fe site when the ${\gamma}-rays$ have the same radiation direction with the c-axis in the crystal, which mean that the whole crystal bulk formed only one crystal and same spin direction. The hysteresis curve shows the saturation moment and coercive force of 70.71 emu/g and 320 Oe respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.50-50
• /
• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.59-59
• /
• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.81-81
• /
• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Applied Chemistry for Engineering
• /
• v.25 no.5
• /
• pp.455-462
• /
• 2014

This work investigated the hydrophobic coating of silicate yellow phosphor powder in the form of divalent europium-activated strontium orthosilicate ($Sr_2SiO_4:Eu^{2+}$) by using an atmospheric pressure dielectric barrier discharge (DBD) plasma with argon as a carrier and hexamethyldisiloxane (HMDSO), toluene and n-hexane as precursors. After the plasma treatment of the phosphor powder, the lattice structure of orthosilicate was not altered, as confirmed by an X-ray diffractometer. The coated phosphor powder was characterized by scanning electron microscopy, fluorescence spectrophotometry and contact angle analysis (CAA). The CAA of the phosphor powder coated with the HMDSO precursor revealed that the water contact angle increased from $21.3^{\circ}$ to $139.5^{\circ}$ (max. $148.7^{\circ}$) and the glycerol contact angle from $55^{\circ}$ to $143.5^{\circ}$ (max. $145.3^{\circ}$) as a result of the hydrophobic coating, which indicated that hydrophobic layers were successfully formed on the phosphor powder surfaces. Further surface characterizations were performed by Fourier transform infrared spectroscopy and X-ray photoelectron spectrometry, which also evidenced the formation of hydrophobic coating layers. The phosphor coated with HMDSO exhibited a photoluminescence (PL) enhancement, but the use of toluene or n-hexane somewhat decreased the PL intensity. The results of this work suggest that the DBD plasma may be a viable method for the preparation of hydrophobic coating layer on phosphor powder.