• Current Applied Physics
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• v.18 no.11
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• pp.1422-1425
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• 2018

$NaTa_{1-x}Fe_xO_3$ ($0{\leq}x{\leq}0.40$) nanocubes were synthesized by a relatively low temperature hydrothermal method, using $Ta_2O_5$, $FeCl_3$ and NaOH as the precursors. The UV-vis diffuse reflectance spectra showed that $NaTa_{1-x}Fe_xO_3$ had significant visible-light-absorbing capability, and the absorption edge of $NaTaO_3$ shifted to longer wavelength with the increase of Fe dopants. Moreover, $NaTa_{1-x}Fe_xO_3$ exhibited room-temperature ferromagnetism when $Fe^{3+}$ occupied $Ta^{5+}$ sites in $NaTaO_3$ crystal lattice. The ferromagnetism is mainly attributed to the superexchange interactions between doped $Fe^{3+}$, rather than the contribution of oxygen vacancies caused by Fe doping. Therefore, Fe doping can simultaneously regulate the optical and magnetic properties of $NaTaO_3$ semiconductor, which will enable its potential applications in multifunctional optical-electronics and opticalspintronics devices.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.526-526
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• 1996

The single crystal of LiTaO3 is well known eletro-optic material as well as the piezoelectric one applied to SAW filter. LiTaO3 has large electro-optic effects, so applied to optical switch, acosto-optic deflector, and optical memory device using photorefractive effects. The crystal growth of SAW-grade LiTaO3 has been studied many aspects, but there is no detail research about optic-grade crystal growth. The conditions of optic-grade LiTaO3 single crystal are as below. The optical transmittance must be over 75%, and axial and radial concentratiom uniformity below 1%. The variation of Curie temperature depending on Li/Ta ratio must be also below 2$^{\circ}C$ and no internal no internal cracks and defects. Because of the limitation of crystal quality, the growing of optic-grade LiTaO3 single crystal is very difficult compared with the growing of SAW-grade. In this research, upper conditions of optic-grade single crystal was investigated after growing of 1 inch diameter and 1.5 inch length LiTaO3 single crystal having no internal cracks and defects using Czochralski method. Curie temperature was determined with DSC and measuring capacitance and lattice parameter was calculated about the grown crystal and ceramic powder samples of various Li/Ta ratio. The result of Tc variation was below 1.2$^{\circ}C$ all over the grown crystal, so it is confirmed that LiTaO3 was grown under congruent melting composition having optical homogeniety. Also, the optical transmittance was about 78%, which was sufficient for optical device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.70-75
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• 1997

An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is $6.077\AA$, which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about $10^{18}{\textrm}{cm}^{-3}$, $10^2\textrm{cm}^2/V{\cdot}sec$ at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.

• Nuclear Engineering and Technology
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• v.55 no.7
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• pp.2556-2566
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• 2023

A first-principle approach within the framework of density functional theory was employed to study the effect of vacancy defects and fission products (FPs) doping on the mechanical, electronic, and thermodynamic properties of uranium monocarbide (UC). Firstly, the calculated vacancy formation energies confirm that the C vacancy is more stable than the U vacancy. The solution energies indicate that FPs prefer to occupying in U site rather than in C site. Zr, Mo, Th, and Pu atoms tend to directly replace U atom and dissolve into the UC lattice. Besides, the results of the mechanical properties show that U vacancy reduces the compressive and deformation resistance of UC while C vacancy has little effect. The doping of all FPs except He has a repairing effect on the mechanical properties of U_1-xC. In addition, significant modifications are observed in the phonon dispersion curves and partial phonon density of states (PhDOS) of UC_1-x, Zr_xU_1-xC, Mo_xU_1-xC, and Rh_xU_1-xC, including narrow frequency gaps and overlapping phonon modes, which increase the phonon scattering and lead to deterioration of thermal expansion coefficient (α_V) and heat capacity (C_p) of UC predicted by the quasi harmonic approximation (QHA) method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.223-229
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• 1994

$KTP(KTiOPO_4)$ single crystals have been hydrothermally grown in KOH solutions. Properties and Raman spectra of grown crystal were investigated. The most effective solvents for the crystal growth of KTP were KOH and KF solutions. In this study, the properties of KTP single crystals grown hydrothermally at $500^{\circ}C$ in 9 m KOH solution were measured. The following results were obtained : lattice parameters ; a=1.281 nm and c=1.058 nm, density ; $2.94 g/cm^3$, Vickers hardness ; $562kg/cm^2$, refractive indices ; $n_e=1.740$ and $n_e= 1.747.$ And Raman spectra of hydrothermal growth KTP single crystal have been investigated at room temperature under atmospheric pressure. As a result, the $A_1$ modes agree very well with KTP single crystal of high temperatures solution growth but the behavior of $B_2$ modes were slightly different.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.51-66
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• 1994

Y3Al5O2 and Nd: Y3Al5012 single crystals were grown by Czochralskl technique. The effectt of pulling rate rotation rate, and doping level of Nd3+ ion on the crystal quality were studied Various types of defects were analysed by photo-elastic effect and chemical etching method Finally, spectroscopic and laser poputies of grown crystal were measured. Optirmum pulling rate for good quality was dependant on the doping level of Nd3+ ion. It was found that the suitable pulling rates for pure Y3Al5O12 for 3.0∼3.5 a/o Nd3+ ion doped Y3Al5012 and for more than 40 a/o Nd3+ ion doped Y3Al5012 were 2∼4mm/hr, 0.6∼0.5mm/hr, and less than 0.4mm/hr respectively. Solid-liquid interface was convex at the rotation rate of 27∼60rpm, and concave at the rotation rate of 80∼100rpm. Growth axis was confired to <111> direction and lattice parameter was measured to 12.017A. Core (211) facets,striations, inclusions of metal particles, dislocations and optical inhonngeneities were detected. Four level laser transition of Nd3+ion in YIAls012 single crystal were identified by the spectroscopic measurements. Laser rod with tam diameter and 63mm length was fabricated from grown Nd3+ Y3Al5012 sin91e crystals. 1.8lJ of lasing threshould and 0.49% of soope efficiency were measured by the Pulsed laser action.

• Korean Chemical Engineering Research
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• v.47 no.3
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• pp.310-315
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• 2009

Perovskite-type ceramic powder, $La_{0.7}Sr_{0.3}Co_{0.3}Fe_{0.7}O_{3-{\delta}}$, have been synthesized successfully by the citrate method. As a result of TGA for precursor, metal-citrate complex in precursor was decomposed in the temperature range of $150{\sim}650^{\circ}C$. XRD analysis showed the single perovskite structure was observed over $1,000^{\circ}C$ without impurities. Typical dense membrane with 1.6 mm thickness has been prepared using as-prepared powder by pressing unilaterally and sintering at $1,300^{\circ}C$. The electrical conductivity of $La_{0.7}Sr_{0.3}Co_{0.3}Fe_{0.7}O_{3-{\delta}}$ membrane increased with increasing temperature at atmosphere of air and then decreased over $600^{\circ}C$ due to oxygen loss from the crystal lattice. The oxygen flux of $La_{0.7}Sr_{0.3}Co_{0.3}Fe_{0.7}O_{3-{\delta}}$ membrane in the range of 700 to $950^{\circ}C$ increased with the increasing temperature from 0.045 to $0.415ml/cm^2{\cdot}min$. The activation energy for oxygen permeation was calculated to be 89.17 kJ/mol.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.109-115
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• 1993

A CdS single crystal was grown by using sublimation method. Lattice constants, $a_{o}$ and $c_{o}$, obtained by using extrapolation were $4.131{\underline{8}}{\AA}$ and $6.712{\underline{2}}{\AA}$, respectively. The carrier density was${\sim}10^{23}m^{-3}$ and the mobility was $2.93{\times}10^{-2}m^{2}$/V sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to $T^{1/2}$ from 33 K to 150 K and a decreasing tendency in proportion to $T^{-2}$ from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.

• Applied Chemistry for Engineering
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• v.30 no.4
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• pp.499-503
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• 2019

Characteristics of solar cells employing a lattice matched GaInP/GaAs quantum well (QW) structure in a single N-AlGaInP/p-InGaP heterojunction (HJ) were investigated and compared to those of solar cells without QW structure. The epitaxial layers were grown on a p-GaAs substrate with $6^{\circ}$ off the (100) plane toward the <111>A. The heterojunction of solar cell consisted of a 400 nm N-AlGaInP, a 590 nm p-GaInP and 14 periods of a 10 nm GaInP/5 nm GaAs for QW structure and a 800 nm p-GaInP for the HJ structure (control cell). The solar cells were characterized after the anti-reflection coating. The short-circuit current density for $1{\times}1mm^2$ area was $9.61mA/cm^2$ for the solar cell with QW structure while $7.06mA/cm^2$ for HJ control cells. Secondary ion mass spectrometry and external quantum efficiency results suggested that the significant enhancement of $J_{sc}$ and EQE was caused by the suppression of recombination by QW structure.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.