• 제목/요약/키워드: Isolation capacitance

검색결과 45건 처리시간 0.021초

난과 식물의 형질전환 유도 및 다량증식에 관한 연구 (II) 자란의 원형질체 분리, 배양 및 Electroporation (Studies on the Induction of Transformation and Mutiplication in Orchid Plants (II) Isolation, Culture and Electroporation of Protoplasts in Bletilla striata)

  • 이정석;김영준황성진황백
    • KSBB Journal
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    • 제6권2호
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    • pp.201-205
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    • 1991
  • 난과식물의 형질전환 유도의 기초연구로서 자란(Bletilla striata)의 미성숙 종자로 부터 embryogenic callus를 유도하고, 이 배발생 캘러스의 현탁배양을 하여 이로부터 분리한 원형질체에 여러가지 조건하에서 electroporation을 행하고 원형질체의 생존율(viability)을 조사하였다. Voltage와 capacitancy의 증가에 의해 생존율은 감소를 가져 왔으며, HBM buffer에서 $4^{\circ}C$로 electroporation시 원형질체의 생존율에 있어서 안정성을 높일 수 있었다.

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생체 이식형 의료기기의 패키징을 위한 완전 밀폐 방법에 관한 연구 (A Study on the Hermetic Method for Packaging of Implantable Medical Device)

  • 박재순;김성일;김응보;강영환;조성환;정연호
    • 한국전기전자재료학회논문지
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    • 제30권7호
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    • pp.407-412
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    • 2017
  • This paper introduces a biocompatible packaging system for implantable medical device having a hermetic sealing, such that a perfect physical and chemical isolation between electronic medical system and human body (including tissue, body fluids, etc.) is obtained. The hermetic packaging includes an electronic MEMS pressure sensor, power charging system, and bluetooth communication system to wirelessly measure variation of capacitance. The packaging was acquired by Quartz direct bonding and $CO_2$ laser welding, with a size of width $ 6cm{\times}length\;10cm{\times}lheight\;3cm$. Hermetic sealing of the packaged system was tested by changing the pressure in a hermetic chamber using a precision pressure controller, from atmospheric to 900 mmHg. We found that the packaged system retained the same count or capacitance values with sensor 1 - 25,500, sensor 2 - 26,000, and sensor 3 - 20,800, at atmospheric as well as 900 mmHg pressure for 5 hours. This result shows that the packaging method has perfect hermetic sealing in any environment of the human body pressure.

Design of a Compact Antenna Array for Satellite Navigation System Using Hybrid Matching Network

  • Lee, Juneseok;Cho, Jeahoon;Ha, Sang-Gyu;Choo, Hosung;Jung, Kyung-Young
    • Journal of Electrical Engineering and Technology
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    • 제13권5호
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    • pp.2045-2049
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    • 2018
  • An antenna arrays for a satellite navigation systems require more antenna elements to mitigate multiple jamming signals. In order to maintain the small array size while increasing the number of antenna elements, miniaturization technique is essential for antenna design. In this work, an electrically small circular microstrip patch antenna with a 3 dB hybrid coupler is designed as an element antenna, where the 3 dB hybrid coupler can yield the circularly polarized radiation characteristic. The miniaturized element antenna typically has too large capacitance in GPS L1 and GLONASS G1 bands, making it difficult to match with a single stand-alone non-Foster matching circuit (NFMC) in a stable state. Therefore, we propose a new matching technique, referred to as the hybrid matching method, which consists of a NFMC and a passive circuit. This passive tuning circuit manages reactance of antenna elements at an appropriate capacitance without a pole in the operating frequency range. The antenna array is fabricated, and the measured results show a reflection coefficient of less than -10 dB and an isolation of greater than 50 dB. In addition, peak gain of the proposed antenna is increased by 22.3 dB compared to the antenna without the hybrid matching network.

Comb drive를 이용한 RF MEMS 스위치에 관한 연구 (A Study on RF MEMS Switch with Comb Drive)

  • 강성찬;김현철;전국진
    • 대한전자공학회논문지SD
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    • 제45권4호
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    • pp.7-12
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    • 2008
  • 본 논문에서는 comb drive를 이용하여 수평 방향 저항 접촉 방식의 RF MEMS 스위치 개발을 소개한다. 무선통신 트랜시버에서 사용되는 FEM에서 사용될 수 있는 높은 안전성과 좋은 RF 특성을 가지는 스위치의 개발을 목표로 한다. 따라서 작은 삽입손실 특성을 가지기 위해 comb drive를 이용하여 큰 접촉 힘을 발생시키고, 큰 격리도 특성을 가지기 위해 스위치 off 상태에서 작은 정전용량을 갖도록 한다. 그리고 단결정 실리콘을 스위치의 구조물로 사용함으로써 기계적인 안전성을 갖도록 한다. 개발된 RF MEMS 스위치는 26 V의 동작 전압을 가지며, 2 GHz에서 0.44 dB 이하의 삽입손실과 60 dB 이상의 격리도 특성을 가진다.

세 층 마이크로스트립 유전체 기판을 이용한 방향성 결합기 설계에 관한 연구 (A Study on the Design of the Directional Coupler using Three Layer Microstrip Substrate)

  • 천동완;김원기;박정훈;김상태;신철재
    • 한국전자파학회논문지
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    • 제12권4호
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    • pp.513-520
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    • 2001
  • 본 논문에서는 세층 마이크로스트립 유전체 기판을 이용한 방향성 결합기를 제안하고, 설계방법을 제시하였다. 제안된 구조는 re-entrant mode 결합기의 구조를 수정하여. 결합이 이루어지는 두 전송선로의 위에 한 층의 매질을 추가시키고 그 위에 부동도체를 위치시킨 형태이다. 이러한 구조는 기 모드 정전용량의 증가로 인해 높은 결합도를 얻을 수 있고, 각 모드별 유효 유전율의 차이가 크지 않기 때문에 정재파비, 격리도, 위상차 등에서도 우수한 특성을 얻을 수 있다. 우, 기 모드 해석 방법을 통해 임피던스, 유효 유전율, 결합계수 등을 계산하여 결합기를 설계하였다. 시뮬레이션 및 측정결과 제안된 구조가 기존의 구조보다 2dB 정도 높은 결합도를 가지고, 정재파비, 격리도, 위상 특성 또한 우수함을 알 수 있었다.

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고전압 태양광 패널용 고효율 단상 태양광 인버터 (A High-efficiency Single-phase Photovoltaic Inverter for High-voltage Photovoltaic Panels)

  • 류형민
    • 전기전자학회논문지
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    • 제26권4호
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    • pp.584-589
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    • 2022
  • 고전압 태양광 패널에서 단상 계통으로의 직류-교류 전력 변환을 위해 벅부스트 컨버터에 풀브리지 인버터를 종속적으로 연결하는 두 단계의 무변압기 인버터가 주로 사용된다. 태양광 패널의 큰 기생 커패시턴스에 기인하는 과도한 누설 전류를 피하기 위해 풀브리지 인버터는 단극성 PWM에 비해 훨씬 더 많은 전력 손실을 초래하는 양극성 PWM으로만 스위칭할 수 있다. 그런 낮은 효율을 개선하기 위해 본 논문은 벅부스트 컨버터에 회로 절연을 위한 IGBT와 다이오드를 하나씩 추가한 새로운 토폴로지를 제안한다. 제안된 회로 절연 방식은 누설 전류를 증가시키지 않으면서 풀브리지 인버터에서 단극성 PWM을 가능케 함으로써 전체 효율을 개선한다. 제안된 방법의 타당성은 컴퓨터 시뮬레이션과 전력 손실 계산을 통해 검증한다.

Design of a 94-GHz Single Balanced Mixer Using Planar Schottky Diodes with a Nano-Dot Structure on a GaAs Substrate

  • Uhm, Won-Young;Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of information and communication convergence engineering
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    • 제14권1호
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    • pp.35-39
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    • 2016
  • In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

Circuit Modelling and Eigenfrequency Analysis of a Poly-Si Based RF MEMS Switch Designed and Modelled for IEEE 802.11ad Protocol

  • Singh, Tejinder;Pashaie, Farzaneh
    • Journal of Computing Science and Engineering
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    • 제8권3호
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    • pp.129-136
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    • 2014
  • This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

Analysis and Implementation of a New ZVS DC Converter for Medium Power Application

  • Lin, Bor-Ren;Shiau, Tung-Yuan
    • Journal of Electrical Engineering and Technology
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    • 제9권4호
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    • pp.1296-1308
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    • 2014
  • This paper presents a new zero voltage switching (ZVS) converter for medium power and high input voltage applications. Three three-level pulse-width modulation (PWM) circuits with the same power switches are adopted to clamp the voltage stress of MOSFETs at $V_{in}/2$ and to achieve load current sharing. Thus, the current stresses and power ratings of transformers and power semiconductors at the secondary side are reduced. The resonant inductance and resonant capacitance are resonant at the transition interval such that active switches are turned on at ZVS within a wide range of input voltage and load condition. The series-connected transformers are adopted in each three-level circuit. Each transformer can work as an inductor to smooth the output current or a transformer to achieve the electric isolation and power transfer. Thus, no output inductor is needed at the secondary side. Three center-tapped rectifiers connected in parallel are used at the secondary side to achieve load current sharing. Compared with the conventional parallel three-level converters, the proposed converter has less switch counts. Finally, experiments based on a 1.44kW prototype are provided to verify the operation principle of proposed converter.

유한요소계산을 이용한 고지향성을 갖는 재-진입모드 마이크로스트립 방향성 결합기의 설계 파라미터 추출 (Extraction of Design Parameters for Re-entrant Mode Microstrip Directional Coupler with High Directivity Using FE Calculation)

  • 김형석;박준석;안달
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권5호
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    • pp.238-242
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    • 2001
  • In this paper, we extracted design parameters for re-entrant mode microstrip directional coupler using FE(finite element) calculations. The microstrip directional coupler suffers from a poor directivity due to effect of the inhomogeneous dielectric including both dielectric substrate and air in microstrip transmission lines. Thus, the phase velocity of even mode is not equal to that of odd mode. In order to improve the directivity of microstrip directional coupler, a novel re-entrant mode microstrip directional coupler was employed. In microstrip configuration, the high directivity can be reached by matching the even- and odd-mode effective phase velocities. Through the values of capacitance obtained from 2-dimensional FE calculations, the phase velocities for each mode and the design parameter were extracted for the proposed parallel coupled-line configuration. Based on the extracted design parameter with phase matching condition, we designed and fabricated a 30dB directional coupler at 0.85GHz. Experimental results show good performance with excellent, isolation and directivity.

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