• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.5
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• pp.423-431
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• 2001

This paper proposes a new active common-mode voltage damper circuit that is capable of suppressing a common-mode voltage produced in the PWM VSI-fed induction motor drives. The new active common mode voltage damper is consists of a four-level half-bridge Inverter and a common mode transformer with a blocking capacitor. In order to reduce the common mode voltage and high frequency leakage current the active common mode damper applies to the PWM inverter system the compensated voltage of which the amplitude is the same as the common mode voltage and of which the polarity is opposite to the common mode voltage. Simulated using P-SPICE and experimental results show that common-mode voltage damper makes contributions to reducing a high frequency leakage current and common-mode voltage.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.6
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• pp.479-486
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• 2021

In this paper, an ultra small phase locked loop (PLL) with a single capacitor loop filter has been proposed by adding a signal sensing circuit (SSC). In order to extremely reduce the size of the PLL, the passive element loop filter, which occupies the largest area, is designed with a very small single capacitor (2pF). The proposed PLL is designed to operate stably by the output of the internal negative feedback loop including the SSC acting as a negative feedback to the output of the single capacitor loop filter of the external negative feedback loop. The SSC that detects the PLL output signal change reduces the excess phase shift of the PLL output frequency by adjusting the capacitance charge of the loop filter. Although the proposed structure has a capacitor that is 1/78 smaller than that of the existing structure, the jitter size differs by about 10%. The PLL is designed using a 1.8V 180nm CMOS process and the Spice simulation results show that it works stably.

• ETRI Journal
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• v.31 no.5
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• pp.604-606
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• 2009

The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a $^{60}Co$ gamma-ray source are found in both of the components of the threshold shifting due to oxide charge trapping in the MOS and the reduction of current gain in the bipolar transistor. In this letter, the IGBT macro-model incorporating irradiation is implemented, and the electrical characteristics are analyzed by SPICE simulation and experiments. In addition, the collector current characteristics as a function of gate emitter voltage, VGE, are compared with the model considering the radiation damage of different doses under positive biases.

• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.2255-2258
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• 1997

We have develped the electronic ballast for 32watt/1 fluorescent lamp. in this research. the circuit is analyzed by the P-spice program and designed to match the ballast with the fluresecnt lamp characteristics. The power factor correction circuit has been designed with all passive elements and then achived the slim-line type ballast.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.74-77
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• 2000

Today there is an ever increasing effort to control high-pressure discharge lamps with electronic ballast. HID lamps can be ignited by high-voltage pulses and need an ignitor to start them. An ignitor gives high-voltage pulses to HID lamps which have the type of the arc discharge. Three kinds of ignitor circuits have been analyzed by the P-spice program and we have shown experimental results in this paper. The result of this study seems to be able to help to develope various ignitors.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.159-163
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• 1988

The purpose of this paper is to investigate the effects of alpha particles on the memory circuits such as a sense amplifier and bit lines. Sense amplifiers column alpha particle hits have been simulated for a mega bit DRAM using SPICE, a circuit simulation program. The energy of alpha particle and the substrate concentration are found to strongly influence the likehood of soft errors. Our results may be useful for the designing of alpha particle immune sense amplifiers.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.433-436
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• 1998

Hot carrier induceed the performance degradation of sense amplifier circuit in DRAM has been measured and analyzed using 0.8.mu.m CMOS process. Simulation and experimental results show that the degradation of the MOS devices affects the decrease of the half-Vcc, voltage gain and the increase of the sensing voltage gain and the increase of the sensing voltage. The dominant degradation mechanism is the capacitance imblance in the bit-line pair. We carried out the spice simulation to investigate the degradation of the sense amplifier circuit.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.11a
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• pp.141-145
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• 1998

This paper CMOS full adder design method based on carry-propagation-free addition trees and a circuit technique, so called multiple-valued current-mode (MVCM) circuits. The carry-paopagation-free addition method uses a redundant digit sets called redundant positive-digit number representations. The carry-propagation-free addition is by three steps, and the adder can be designed directly and efficiently from the algorithm using MVCM circuit. We demonstrate the effectiveness of the proposed method through simulation(SPICE).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.759-762
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• 2006

A simple SPICE model for the description of the on-current of low-temperature poly-silicon thin film transistors is proposed. By employing constant mobility, $V_GS$ dependent alpha parameter, and exponential kink effect, very good agreements between the model and measurement were obtained.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.108.6-108
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• 2001

The basic circuit block diagram of CMOS current mode sum and subtract circuit is present in this paper. The purpose circuit consists of the invert current circuit and the basic current mirror. The outputs of the circuit are the summing of the both input current [lx+ly] and also the subtract of the both input current [lx+(-ly)]. The SPICE simulation results of the electrical characteristics with level 7 (BSIM3 model version 3.1) MOSFET transistor model of the circuit such as the input dynamic range, the frequency response and some system application have been shown and analyzed.