Hot carrier effects on the performance degradation of sense amplifiers in DRAM

Hot carrier 현상에 의한 DRAM 감지증폭기의 성능저하

Hot carrier induceed the performance degradation of sense amplifier circuit in DRAM has been measured and analyzed using 0.8.mu.m CMOS process. Simulation and experimental results show that the degradation of the MOS devices affects the decrease of the half-Vcc, voltage gain and the increase of the sensing voltage gain and the increase of the sensing voltage. The dominant degradation mechanism is the capacitance imblance in the bit-line pair. We carried out the spice simulation to investigate the degradation of the sense amplifier circuit.