• Journal of the Korean Magnetics Society
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• v.24 no.4
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• pp.101-106
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• 2014

The glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(2.3 nm)/NiFe(3 nm)/IrMn(12 nm)/Ta(5.8 nm) GMR-SV (giantmagneto-resistance-spin valve) multilayer structure films with a magnetoresistance ratio (MR) of 5.0 % and a magnetic sensitivity (MS) of 1.5%/Oe was deposited by dc magnetron sputtering method. Also, GMR-SV device having a width of $7{\mu}m{\sim}8{\mu}m$ similar to the diameter of RBC (red blood cell) was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ dropped upon the GMR-SV device having MR = 1.06% and MS = 0.3 %/Oe, there is observed the variation of about included of a resistance value of ${\Delta}R=0.4{\Omega}$ and ${\Delta}MR=0.15%$ around a external magnetic field of -0.6 Oe. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property of hemoglobin inside of RBC combined to magnetic beads.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.279-282
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• 2006

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.240-244
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• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.162-168
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• 2015

The ${\mu}$-turn coil having a width of ${\mu}m$ on the GMR-SV (giant magnetoresistance-spin valve) device based on the antiferromagnetic IrMn layer was fabricated by using the optical lithography process. In the case of GMR-SV film and GMR-SV device, the magnetoresistance ratios and the magnetic sensitivities are 4.4%, 2.0%/Oe and 1.6 %, 0.1%/Oe, respectively. In the y-z plane the distribution of magnetic field of GMR-SV device and $10{\mu}$-turns coil which put under the several magnetic bead(MB)s with a diameter of $1{\mu}m$ attached to RBC (red blood cell) was analyzed by the computer simulation using the finite element method. When the AC currents of 20 kHz from 0.1 mA to 10.0 mA flow to the 10 turns ${\mu}$-coil, the magnetic field at the position of $z=0{\mu}m$ at the center of coil was calculated from $30.1{\mu}T$ to $3060{\mu}T$ in proportion to the current. The magnetic field at the position of $z=10{\mu}m$ was decreased to one-sixth of that of $z=0{\mu}m$. It was confirmed that the $10{\mu}$-turn coil having enough magnitude of magnetic field for the capture of RBC is possible to use as a biosensor for the detection of magnetic beads attached to RBC.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.124-127
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• 2007

Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization ($M_s\;:\;560\;emu/cm^3$) and a higher anisotropy constant ($K_u\;:\;2800\;erg/cm^3$) than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003\;erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si/$SiO_2$/Ta 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) MTJs structure, it was found that the size dependence of the switching field originated in the lower $J_{ex}$ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity ($H_c$) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.

• Journal of the Korean Society for Environmental Technology
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• v.19 no.6
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• pp.536-542
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• 2018

A system combining an electrochemical method and an adsorption system using activated carbon was assessed to facilitate the reuse of cabbage-salting brine. IrOx/Ti insoluble catalyst electrodes were used in the experiment. The results were analyzed to identify any changes in the residual chlorine concentration according to variations in the current density at a salinity of 10 %, as well as the capacity of the activated carbon to adsorb the residual chlorine and organic matter. For current densities of $500A/m^2$ and $1,000A/m^2$, the residual chlorine concentration did not increase, instead stabilizing once the current reached 0.33 Ah/L. To assess the adsorption efficiency according to the residual chlorine concentration, the unit amount of the adsorption can be estimated from $Y=0.0066+2.087{\times}10^{-4}b$. For both residual chlorine generation using an electrochemical method and chlorine removal through activated-carbon adsorption, the unit amount of adsorption was 0.33 g/g. The maximum amount of $COD_{Cr}$ organic matter adsorbed by the activated carbon was 0.021 g/g, while for $COD_{Mn}$, the value was 0.004 g/g.

• Applied Chemistry for Engineering
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• v.20 no.1
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• pp.21-27
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• 2009

Resins were synthesized by mixing 1-aza-15-crown-5 macrocyclic ligand attached to styrene (a hazardous material) divinylbenzene (DVB) copolymer with crosslink of 1％, 2％, 5％ and 20％ by a substitution reaction. The characteristic of these resins was confirmed by the content of chlorine, element analysis, thermogravimetric analysis (TGA), surface area (BET), and IR-spectroscopy. The effects of pH, time, dielectric constant of solvents and crosslink on adsorption of metal ions by the synthetic resin adsorbent were investigated. The metal ion was showed a fast adsorption on the resins above pH 3. The optimum equilibrium time for adsorption of metallic ions was about two hours. The adsorption selectivity determined in ethanol was in increasing order of uranium ($UO_2^{2+}$) > manganese ($Mn^{2+}$) > praseodymium ($Pr^{3+}$). The adsorption was in the order of 1％, 2％, 5％, and 20％ crosslink resin and adsorption of resin decreased in proportion to the order of dielectric constant of solvents.

• Journal of the Korean Society of Propulsion Engineers
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• v.12 no.5
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• pp.26-34
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• 2008

The performance of several catalysts to decompose the high test peroxide (HTP) was described in this paper. Manganese oxide, Platinum and Iridium were coated on the gamma alumina. The catalyst activity as active materials was measured at the flask reactor. The response time of various catalysts was also measured with a 50 Newton class thruster. $Ir/Al_2O_3$ that showed the best activity in the flask reactor and response time at the thruster, failed the reaction when continuous mode test was carried out with the thruster. $Pt/Al_2O_3$ and $MnO_2/Al_2O_3$ can be substitutes to decompose the HTP. In addition, for larger thruster, $MnO_2/Al_2O_3$ can be a good catalyst because its cost is below 5 % of $Pt/Al_2O_3$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.36.2-36.2
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• 2009

Low dielectric materials have been great attention in the semiconductor industry to develop high performance interlayer dielectrics with low k for Cu interconnect technology. In our study, the dielectric properties of SiOC /SiO2 thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. Polyphenylcarbosilane was synthesized from thermal rearrangement of polymethylphenylsilane around $350^{\circ}C{\sim}430^{\circ}C$. Characterization of synthesized polyphenylcarbosilane was performed with 29Si, 13C, 1H NMR, FT-IR, TG, XRD, GPC and GC analysis. From FT-IR data, the band at 1035 cm-1 is very strong and assigned to CH2 bending vibration in Si-CH2-Si group, indicating the formation of the polyphenylcarbosilane. Number average of molecular weight (Mn) of the polyphenylcarbosilane synthesized at $400^{\circ}C$ for 6hwas 2, 500 and is easily soluble in organic solvent. SiOC/SiO2 thin film was fabricated on ton-type silicon wafer by spin coating using 30wt % polyphenylcarbosilane incyclohexane. Curing of the film was performed in the air up to $400^{\circ}C$ for 2h. The thickness of the film is ranged from $1{\mu}m$ to $1.7{\mu}m$. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and show a dielectric constant as low as 2.5 without added porosity. The SiOC /SiO2 thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.440-446
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• 2008

To manufacture the MLCC with X7R for high voltage stability, $BaTiO_3-MgO-MnO_2-Y_2O_3$ with $(Ba_{0.4}Ca_{0.6})SiO_3$ glass frit was formulated. Based on this composition, the addition of $Er_2O_3$ showed that TCC(Temperature Coefficient Capacitance) at $85^{\circ}C$ was improved from 5 % to ${\sim}0\;%$, but the dielectric constant and IR (Insulation Resistance) were decreased. The glass frit improved the dielectric constant and IR, so the appropriate contents of $Er_2O_3$ and glass frit were 0.6 mol% and 1 wt%, respectively. It showed that the dielectric constant and RC constant were 2,550 and 2,000 (${\Omega}F$), respectively in the sintering condition at $1250^{\circ}C$ in PO2 $10^{-7}$ Mpa. The MLCC with $3.2{\times}1.6$ (mm) size and $1\;{\mu}F$ was also suited for X7R with the above composition.