• Journal of Electrochemical Science and Technology
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• 제11권2호
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• pp.165-171
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• 2020

The electrochemical preparation and spectroscopic characterisation of iridium-antimony (Ir-Sb) species is important owing to their potential applications as nanostructure materials. Nanostructures, i.e. nanoflower and nanodisk, of Ir-Sb were electrodeposited on conductive substrates using a practical electrochemical method based on the simultaneous underpotential deposition (UPD) of Ir and Sb from the IrCl₃ and Sb₂O₃ at a constant potential. Electrochemical UPD mechanism of Ir-Sb was studied using cyclic voltammetry and potential-controlled electrochemical deposition techniques. Herein, X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, X-ray photoelectron and Raman spectroscopy were used to determine the morphological and structural properties of the electrochemically-synthesised Ir-Sb nanostructures.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.12-15
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• 2018

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1604-1611
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• 2018

Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of $GaAs_xSb_{1-x}$, $In_{1-x}Ga_xSb$, and $InAs_xSb_{1-x}$ with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from $2{\mu}m$ to $12{\mu}m$ in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from $InAs_xSb_{1-x}$ and $In_{1-x}Ga_xSb$ samples even at room temperature show promising potential for IR photodetector applications.

• 한국환경과학회지
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• 제25권5호
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• pp.737-744
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• 2016

For electrolysis process using an insoluble electrode, electrochemical performance was greatly affected by the manufacturing method and procedure, such as the firing temperature, pre-treatment, type of precursor solution, coating method, electrode material, etc. Components of the electrode therein is one of the most important factors in electrochemical reaction. To achieve such characteristics, a appropriate ratio of the electrode material should be carefully chosen. The aim of this research was to apply experimental design method in the optimization of electrode component for the maximum generation of oxidants in electrochemical oxidation process. Mixture design, especially expanded simplex lattice design, in DOME (design of mixture experiments) with Design Expert - commercial software - was used to analyze the data. Analysis of variance (ANOVA) showed a high coefficient of determination ($R^2$) value of 0.9470, thus ensuring a satisfactory adjustment of the $3^{rd}$ order special cubic regression model with the experimental data. The application of response surface methodology (RSM) yielded the following regression equation, which is an empirical relationship between the TRO generation concentration and independent variables(mol ratio of 3 electrode components) in a real unit: TRO generation concentration $(mg/L)=TRO\;conc.=98.25{\times}[Ir]+49.71{\times}[Sn]+95.29{\times}[Sb]-16.91{\times}[Ir]{\times}[Sn]-29.47{\times}[Ir]{\times}[Sb]-22.65{\times}[Sn]{\times}[Sb]+703.19{\times}[Ir]{\times}[Sn]{\times}[Sb]$. The optimized formulation of the 3 component electrode for an high TRO (total residual oxidants) generation was acquired at mol ratio of Ir 0.406, Sn 0.210, Sb 0.384 (desirability d value, 1).

• 한국물환경학회지
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• 제23권3호
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• pp.377-384
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• 2007

This study has carried out a performance of dimensionally stable anode for the purpose of decolorization of Rhodamine B (RhB) in water. Seven kinds of 1, 2 and 3 component electrodes were prepared by plating and thermal deposition, which were coated by the oxides of Pt, Ru, Ir, Sn-Sb, Ir-Sn-Sb, Ru-Sn-Sb and Ru-Sn-Ti on Ti metal surface, respectively. Performance for RhB decolorization of the seven electrodes lay in: Ru-Sn-Ti/Ti ${\fallingdotseq}$ Ru-Sn-Sb/Ti > Ir-Sn-Sb/Ti > Sn-Sb/Ti > Ru/Ti > Ir/Ti > Pt/Ti. The effects of electrode area and distance, electrolyte type and concentration, current density and pH were investigated on the decolorization of RhB using Ru-Sn-Ti/Ti electrode. Decolorization of RhB was not influenced by electrode area and distance largely, however wattage was influenced by them. NaCl was superior to the decolorization of RhB than $Na_2SO_4$. Optimum NaCl dosage and current density were 0.5 g/L and $0.183A/cm^2$, respectively. The pH effect of decolorization of RhB was not significant within the range of 3-7.

• 한국환경과학회지
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• 제29권10호
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• pp.943-949
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• 2020

In this work, we prepared a heterojunction anode with a surface layer of SnO₂-Sb-Ni (SSN) on a Ti/IrO₂ electrode by thermal decomposition to improve the electrochemical activity of the Ti/IrO₂ electrode. The Ti/IrO₂-SSN electrode showed significantly improved electrochemical activity compared with Ti/IrO₂. For the 0.1 M NaCl and 0.1 M Na₂SO₄ electrolytes, the onset potential of the Ti/IrO₂-SSN electrode shifted in the positive direction by 0.1 V_SCE and 0.4 V_SCE, respectively. In 2.0-2.5 V voltages, the concentration in Ti/IrO₂-SSN was 2.59-214.6 mg/L Cl₂, and Ti/IrO₂ was 0.55-49.21 mg/L Cl₂. Moreover, the generation of the reactive chlorine species and degradation of Eosin-Y increased by 3.79-7.60 times and 1.06-2.15 times compared with that of Ti/IrO₂. Among these voltages, the generation of the reactive chlorine species and degradation of Eosin-Y were the most improved at 2.25 V. Accordingly, in the Ti/IrO₂-SSN electrode, it can be assumed that the competitive reaction between chlorine ion oxidation and water oxidation is minimized at an applied voltage of 2.25V.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.183-189
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• 2013

The chalcogenide glass has superior optical properties in IR region transmittances. We have determined the composition of GeSbSe chalcogenide glass for the application of good IR lenses, resulting in the composite rate of $Ge_{19}Sb_{23}Se_{58}$. The optical, structural, thermal and physical properties were measured by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), X-ray computed tomography (X-ray CT) respectively. The fabrication of the chalcogenide glass lens for infrared optics applications was proposed using a diamond turning machining technology which is known as the suitable ways for the production cost reduction and the accurate fabrication process control.

• 분석과학
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• 제34권1호
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• pp.17-22
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• 2021

In this study, flame retardant mixtures of decabromodiphenylethane (DBDPE) and Sb2O3 were analyzed using Fourier transform infrared (FT-IR) spectroscopy. The experimentally obtained wavenumbers of DBDPE and Sb2O3 were 1321 and 949 cm-1, respectively, whereas those obtained by theoretical calculation were 1370 and 818 cm-1, respectively. Strong correlation was observed between the mixing molar ratios and observed peak area ratios, suggesting that FT-IR analysis can be used to obtain relative amounts of the individual components of flame retardant mixture.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.334-345
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• 2008

컴퓨터의 발달과 더불어 현대사회는 기록하고 보존해야할 정보의 양이 점점 방대해 지고 있다. 그로 인해 자기기록매체처럼 정보를 사용자의 편의에 따라 반복적으로 기록하고 재생할 수 있는 광기록매체에 대한 관심이 증가되고 있다. $Ge_2Sb_2Te_5$(GST)는 기존의 CD-RW나 Floppy Disk(FD)를 대체할 차세대 기록매체로 주목받고 있다. 따라서 본 연구에서는 비정질상과 결정상으로 변하는 성질을 가지고 있는 GST롤 상변화 기록매체로서 이용하기 위해 굴절률을 평가하였다. 시료는 5N의 순도를 갖는 Ge, Sb, Te 물질을 준비하고 조성비에 맞추어서 석영관에 진공 봉입한 후 용융-냉각법으로 벌크를 제작하였고 열증착 방법으로 Si 및 유리 기판위에 1000nm 두께로 박막을 제작하였다. UV-Vis-IR spectrophotometer를 사용하여 반사도와 투과도를 측정하였고 측정한 스펙트럼을 이용하여 Swanepoel method로 굴절률을 계산하였다. 본 연구진이 자체 개발한 계산툴에 실험값을 대입하였고 실험에 의해 얻은 투과도와 계산툴에 의해 얻은 투과도 스펙트럼을 비교하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.33-36
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• 2004

탄소 도핑$(5{\times}10^{19}\;cm^{-3})$된 p-type GaAsSb 에피층 위에, Ti/Pt/Au, Pd/Au, Pd/Ir/Au를 이용한 다층 오믹 접촉을 제작하였다. MOCVD(metal-organic chemical vapor deposition)를 이용하여 성장시킨 이 p-GaAsSb의 정공 이동도는 탄소의 도핑 농도가 매우 높음에도 불구하고, $50\;cm^2/Vs$로 측정되었다. 오믹 접촉의 전기적 특성을 측정하기 위하여 TLM(Transfer length method)를 이용하였다. Pd/Ir/Au을 이용한 오믹접촉의 specific contact resistivity는 $10^{-8}\;ohm-cm^2$ 보다 작은 수치를, transfer length는 100 nm보다 작은 수치를 보였으며, Ti/Pt/Au을 이용한 ohmic contact의 specific contact resistivity는 $10^{-7|\;ohm-cm^2$ 보다 작은 수치를, transfer length는 400 nm보다 작은 수치를 나타내었다.