• 제목/요약/키워드: Ionized gas

검색결과 155건 처리시간 0.028초

Non-Thermal Atmospheric-Pressure Plasma Possible Application in Wound Healing

  • Haertel, Beate;von Woedtke, Thomas;Weltmann, Klaus-Dieter;Lindequist, Ulrike
    • Biomolecules & Therapeutics
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    • 제22권6호
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    • pp.477-490
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    • 2014
  • Non-thermal atmospheric-pressure plasma, also named cold plasma, is defined as a partly ionized gas. Therefore, it cannot be equated with plasma from blood; it is not biological in nature. Non-thermal atmospheric-pressure plasma is a new innovative approach in medicine not only for the treatment of wounds, but with a wide-range of other applications, as e.g. topical treatment of other skin diseases with microbial involvement or treatment of cancer diseases. This review emphasizes plasma effects on wound healing. Non-thermal atmospheric-pressure plasma can support wound healing by its antiseptic effects, by stimulation of proliferation and migration of wound relating skin cells, by activation or inhibition of integrin receptors on the cell surface or by its pro-angiogenic effect. We summarize the effects of plasma on eukaryotic cells, especially on keratinocytes in terms of viability, proliferation, DNA, adhesion molecules and angiogenesis together with the role of reactive oxygen species and other components of plasma. The outcome of first clinical trials regarding wound healing is pointed out.

Study of The Anisotropy of Electron Energy Distribution of Optical-Field Ionized Oxygen Plasma by Using Polarization Spectroscopy

  • Kim, Dong-Eon;Kim, Jae-Hoon;Kawachi, Tetsuya;Hasegawa, Noboru;Sukegawa, Kouta;Iwamae, Atsushi;Fujimoto, Takashi
    • Journal of the Optical Society of Korea
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    • 제7권3호
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    • pp.145-149
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    • 2003
  • The anisotropy of electron energy distribution in oxygen plasmas produced by a high intensity laser was investigated by using polarization spectroscopy. An ultra-short pulsed laser with a pulse duration of 66.5 fs and a power density of $1 {\times} 10^17/ W/$\textrm{cm}^2$$ was used. At this power density and pulse duration, the plasma was generated predominantly by optical field ionization. The degree of polarization of OVI 1s$^2$2p$^2$p2- 1s$^2$4d$^2$D$^{0}$ (J = 1/2-3/2 and 3/2-5/2) transition line at 129.92 $\AA$ was measured. O VI 1s$^2$2p$^2$P$^2$ -1s$^2$4s$^2$S$^2$ (J = 1/2-1/2 and 3/2-1/2) transition line at 132.26 $\AA$ was used to calibrate the sensitivity of the optical system. The dependencies of the degree of polarization on the initial gas density and on the laser polarization were investigated. When the laser polarization was changed from a linear to a circular polarization, the degree of polarization was decreased. When the initial gas density was increased, the degree of polarization was decreased.

대기압 플라스마에 의한 폴리우레탄 필름의 표면 개질 (Surface Modification of Polyurethane Film Using Atmospheric Pressure Plasma)

  • 양인영;명성운;최호석;김인호
    • 폴리머
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    • 제29권6호
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    • pp.581-587
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    • 2005
  • 상업용 폴리우레탄(PU) 필름의 표면 개질 목적으로 대기압에서 플라스마를 발생시키기 위한 dielectric barrier discharge(DBD) 구조의 평판형 플라스마 반응기 내에서 이온화된 아르곤 플라스마를 사용하였다. 플라스마 처리 공정변수인 처리 시간, 처리 RF-power, 아르곤 가스 유속을 변화시켜가며 접촉각을 측정하여 젖음성과 표면 자유 에너지 변화를 알아보았고, 필름 표면 위에 과산화물을 최대로 도입시키기 위해 플라스마 처리 공정변수를 최적화하였다. 대기압 플라스마 처리 시간 70초, RF-power 120 W, 아르곤 가스유속 6 liter per minute(LPM)에서 가장 높은 젖음성과 표면 자유 에너지 값을 보였고, 1,1-diphenyl-2-picrylhydrazy(DPPH) 법을 사용하여 PU 필름의 표면에 생성된 과산화물의 농도를 정량한 결과, 처리 시간 30초, RF-power 80 W, 아르곤 가스유속 6 LPM의 플라스마 처리 조건에서 최대 2.1 nmol/$\cm^{2}$의 과산화물이 생성되었다.

LARGE-SCALE [OIII] AND [CII] DISTRIBUTIONS OF THE LARGE MAGELLANIC CLOUD WITH FIS-FTS

  • Takahashi, A.;Yasuda, A.;Kaneda, H.;Kawada, M.;Kiriyama, Y.;Mouri, A.;Mori, T.;Okada, Y.;Takahashi, H.
    • 천문학논총
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    • 제27권4호
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    • pp.219-220
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    • 2012
  • We present the results of far-infrared spectroscopic observations of the Large Magellanic Cloud (LMC) with FIS-FTS. We covered a large area across the LMC, including 30 Doradus (30 Dor) and N44 star-forming regions, by 191 pointings in total. As a result, we detect the [OIII] and [CII] line emission as well as far-infrared dust continuum emission throughout the LMC. We find that the [OIII] emission is widely distributed around 30 Dor. The observed size of the distribution is too large to be explained by massive stars in 30 Dor, which are assumed to be enshrouded by clouds with the constant gas density estimated from the [OIII] line intensities. Therefore the surrounding structure is likely to be highly clumpy. We also find a global correlation between the [OIII] and the far-infrared continuum emission, suggesting that the gas and dust are well mixed in the highly-ionized region where the dust survives in clumpy dense clouds shielded from energetic photons. Furthermore we find that the ratios of [CII]/CO are as high as 110,000 in 30 Dor, and 45,000 even on average, while they are typically 6,000 for star-forming regions in our Galaxy. The unusually high [CII]/CO is also consistent with the picture of clumpy small dense clouds.

플라즈마를 이용한 신발소재의 환경 친화적인 접착 표면 처리(I) (Leather's Environment-friendly Adhesion Surface Treatment of shoe's material by Plasma)

  • 하선희;장유진;설수덕
    • 접착 및 계면
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    • 제6권2호
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    • pp.6-12
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    • 2005
  • 플라즈마는 고체, 액체, 기체와 더불어 제 4의 물질상태로 불리어지고 있는데, 기체의 일부가 전리된 가스상태이며 외부기장에 영향을 받고 전기를 통과시키면 발광하는 에너지가 높은 기체의 영역으로 정의된다. 인위적으로 에너지를 가하여 플라즈마를 발생시켜 많은 부분에서 새로운 첨단 연구가 활발하게 이루어지고 있으며, 많은 부분들이 우리의 생활에 들어와 있다. 플라즈마를 이용하여 고분자물의 표면을 처리하게 되면 몇 가지 장점이 있다. 먼저 플라즈마는 표면의 물성만을 변화시켜 고분자 본 물성을 유지시켜주고, 유기용제를 사용하지 않으며, 공정 운행 중 발생하는 폐기물이 없어 환경친화적이며, 상압 플라즈마의 경우 자동화 연속공정이 가능하다. 본 실험에서는 신발소재 고분자 재료의 상호 접착능력을 향상시키기 위하여 플라즈마를 사용하여 표면 개질을 시도하였고, 처리 시간과 사용한 가스의 유량에 따른 박리강도 시험을 통하여 접착력 향상을 확인하였고, 접촉각 측정과 SEM 측정을 통하여 고분자 표면 변화를 확인하였다.

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The Limited Impact of AGN Outflows: IFU study of 20 local AGNs

  • Bae, Hyun-Jin;Woo, Jong-Hak;Karouzos, Marios;Gallo, Elena;Flohic, Helene;Shen, Yue;Yoon, Suk-Jin
    • 천문학회보
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    • 제42권1호
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    • pp.28.1-28.1
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    • 2017
  • To investigate AGN outflows as a tracer of AGN feedback on the host galaxies, we perform integral-field spectroscopy of 20 type 2 AGNs at z<0.1 using the Magellan/IMACS and the VLT/VIMOS. The observed objects are luminous AGNs with the [O III] luminosity >$10^{41.5}erg/s$, and exhibit strong outflow signatures in the [O III] kinematics. We obtain the maps of the narrow and broad components of [O III] and $H{\alpha}$ lines by decomposing the emission-line profile. The broad components in both [O III] and $H{\alpha}$ represent the non-gravitational kinematics, (i.e., gas outflows), while the narrow components represent the gravitational kinematics (i.e., rotational disks), especially in $H{\alpha}$. By using the spatially integrated spectra within the flux-weighted size of the narrow-line region, we estimate the outflow energetics. The ionized gas mass is $(1.0-38.5){\times}10^5M_{\odot}$, and the mean mass outflow rate is $4.6{\pm}4.3M_{\odot}/yr$, which is a factor of ~260 higher than the mean mass accretion rate $0.02{\pm}0.01M_{\odot}/yr$. The mean energy injection rate is $0.8{\pm}0.6%$ of the AGN bolometric luminosity Lbol, while the mean momentum flux is $(5.4{\pm}3.6){\times}L_{bol}/c$, except for two most kinematically energetic AGNs. The estimated energetics are consistent with the expectations for energy-conserving outflows from AGNs, yet we do not find any supporting evidence of instantaneous star-formation quenching due to the outflows.

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BaTiO3 타겟의 R.F. 방전 중 변수에 따른 광반사분광 특성 (Optical Emission Spectroscopy with Parameters During R.F. Discharge of BaTiO3 Target)

  • 박상식
    • 한국재료학회지
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    • 제21권9호
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    • pp.509-514
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    • 2011
  • In this study, optical emission spectroscopy was used to monitor the plasma produced during the RF magnetron sputtering of a $BaTiO_3$ target. The intensities of chemical species were measured by real time monitoring with various discharge parameters such as RF power, pressure, and discharge gas. The emission lines of elemental and ionized species from $BaTiO_3$ and Ti targets were analyzed to evaluate the film composition and the optimized growth conditions for $BaTiO_3$ films. The emissions from Ar(I, II), Ba(I, II) and Ti(I) were found during sputtering of the $BaTiO_3$ target in Ar atmosphere. With increasing RF power, all the line intensities increased because the electron density increased with increasing RF power. When the Ar pressure increased, the Ba(II) and Ti(I) line intensity increased, but the $Ar^+$ line intensity decreased with increasing pressure. This result shows that high pressure is of greater benefit for the ionization of Ba than for that of Ar. Oxygen depressed the intensity of the plasma more than Ar did. When the Ar/$O_2$ ratio decreased, the intensity of Ba decreased more sharply than that of Ti. This result indicates that the plasma composition strongly depends on the discharge gas atmosphere. When the oxygen increased, the Ba/Ti ratio and the thickness of the films decreased. The emission spectra showed consistent variation with applied power to the Ti target during co-sputtering of the $BaTiO_3$ and Ti targets. The co-sputtered films showed a Ba/Ti ratio of 1.05 to 0.73 with applied power to the Ti target. The films with different Ba/Ti ratios showed changes in grain size. Ti excess films annealed at $600^{\circ}C$ did not show the second phase such as $BaTi_2O_5$ and $TiO_2$.

STI-CMP 공정에서 Consumable의 영향 (Effects of Consumable on STI-CMP Process)

  • 김상용;박성우;정소영;이우선;김창일;장의구;서용진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.185-188
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    • 2001
  • Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

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PHYSICAL PROPERTIES OF THE GIANT H II REGION G353.2+0.9 IN NGC 6357

  • BOHIGAS JOAQUIN;TAPIA MAURICIO;ROTH MIGUEL;RUlZ MARIA TERESA
    • 천문학회지
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    • 제37권4호
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    • pp.281-284
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    • 2004
  • Optical imaging and spectroscopy of G353.2+0.9, the brightest part of the giant H II region NGC 6357, shows that this H II region is optically thin, contains ${\~}300\;M_{\bigodot}$ of ionized gas and is probably expanding into the surrounding medium. Its chemical composition is similar to that found in other H II regions at similar galactocentric distances if temperature fluctuations are significant. The inner regions are probably made of thin shells and filaments, whereas extended slabs of material, maybe shells seen edge-on, are found in the periphery. The radio continuum and H$\alpha$ emission maps are very similar, indicating that most of the optical nebula is not embedded in the denser regions traced by molecular gas and the presence of IR sources. About $10^{50}$ UV photons per second are required to produce the H$\beta$ flux from the 1l.3'${\times}$10' region surrounding the Pis 24 cluster that is south of G353.2+0.9. Most of the energy powering this region is produced by the 03-7 stars in Pis 24. Most of the 2MASS sources in the field with large infrared excesses are within G353.2+0.9, indicating that the most recent star forming process occured within it. The formation of Pis 24 preceded and caused the formation of this new generation of stars and may be responsible for the present-day morphology of the entire NGC 6357 region.

CMP 공정의 설비요소가 공정 결함에 미치는 영향 (Effects of Various Facility Factors on CMP Process Defects)

  • 박성우;정소영;박창준;이경진;김기욱;서용진
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권5호
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    • pp.191-195
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    • 2002
  • Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.