• Journal of the Korean Institute of Telematics and Electronics
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• v.4 no.4
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• pp.2-12
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• 1967

A pair of insulated-gate metal-oxide-semiconductor field-effect transistor has been used to measure the direct current produced from the ionization chamber in the range of to A. An analisis of direct-current differential amplifier giving the expressions of the common-mode rejection ratio and the rralization of the constant-current generator to give very large effective source resistance has been presented. Voltage gain is 6.6, drift at the room temperature is 1.5mv per day. The common-mode rejection ratio is obtained maximum 84db. These facts give the feasibility of small direct-current measurements by utilizing this type transistors.

• Transactions of the Korean Society of Automotive Engineers
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• v.10 no.5
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• pp.23-28
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• 2002

As the interest on the air pollution is gradually rising up at home and abroad, automotive industries have been working on the exhaust emission reduction from vehicles through a lot of approaches, which consist of new engine design, innovative aftertreatment systems, and using clean fuels. Methanol, ethanol, LNG, LPG, H2, reformulated gasoline are generally recognized as the clean fuel. Since the low price policy of government on LPG has expanded its vehicle market recently, there is concern of the exhaust emission of LPG vehicle. In this paper, we studied the value of LPG fuel as a clean fuel by comparing the results of the exhaust emission from LPG and Gasoline fueled vehicles, and discussed its limitation of LPG vehicle with mixer type as a fuel supply system. FTIR was used to understand the difference of exhaust emission components of LPG and Gasoline fueled vehicles.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.45 no.11
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• pp.932-938
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• 2017

Particle-in-cell method which blends Eulerian grids and Lagrangian particle is utilized to solve simplified hall-effect thruster. Since this study individually tracks not only neutrons and ions but also electrons, message passing interface(mpi) scheme is adopted for parallel computer cluster. Helical movement of an electron cloud in constant magnetic field is validated comparing with an exact solution. A plasma in radial magnetic field and axial electric field in a reaction cylinder is established. Electrons do double helix movement and are well anchored in a cylinder. Ionization of neutrons by impact with high-speed electrons generates ion particles. They are accelerated by axial electric field, which forms a plume of a plasma-effect thruster.

• Progress in Medical Physics
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• v.7 no.2
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• pp.29-40
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• 1996

We had designed and made the cylindrical ionization chamber which operated above 5 mR/h. Using commercial electrometer, we investigated the characterictic of charge collection in the ion chamber. The active volume was 190.4㎤ and overall length and diameter in the chamber was 15.5cm, 5.22cm, respectively. The chamber had three electrodes(inner, central, wall electrode). And background current was 8.39${\times}$10$\^$-14/${\pm}$1.5${\times}$10$\^$-15/A to arrange the electrodes which were coaxial in chamber axis. The collection efficiency of chamber for Cs$\^$137/ was 99.7％ when the opreating voltage was applied 400V. Comparing with the commertial dosimetry system, the exposure calibration constant was 4.531${\times}$19$\^$7/R/C. By normalizing to CS$\_$137/ the relative energy response of the chamber was 1.30 for Am$\_$24/, 1.05 for C0$\_$60/, respectively. When the irrarition tranversed to the chamber axis, the isotropic effect of the chamber was not considerable.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.442-446
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• 2000

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased parking density. Therefore, it was interested in scaling theory, and full-band Monte Carlo device simulator has been used to study the effects of device scaling on hot carriers in different MOSFET structures. MOSFET structures investigated in this study include a conventional MOSFET with a single source/drain, implant a lightly-doped drain(LDD) MOSFET, and a MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and those are analyzed using TCAD(Technology Computer Aided Design) for scaling and simulation. The scaling has used a constant-voltage scaling method, and we have presented MOSFET´s characteristics such as I-V characteristic, impact ionization, electric field and recognized usefulness of TCAD, providing a physical basis for understanding how they relate to scaling.

• Journal of the Korean Chemical Society
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• v.18 no.5
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• pp.320-328
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• 1974

It is unable to derive the standard emf ($E^{\circ}$) of the cell at high pressure from the conventional method. However, when the concept of the complete equilibrium constant($K{\circ})$) is available to the conventional Nernst equation, it is possible to get the standard emf of the cell at high pressure(complete Nernst equation). Moreover, the other thermodynamic properties, such as the net change of solvation number(k), the compressibility of solvent(${\beta}$), ionization constant(K), the standard free energy change(${\Delta}G^{\circ}$), the standard enthalpy change(${\Delta}H^{\circ}$) and the standard entropy change (${\Delta}S^{\circ}$) of the cell reaction at equilibrium state have been also obtained. In this experiment, the emf of the cell; 12.5 % Cd(Hg)│$CdSO_4(3.105{\times}10^{-3}M),\;Hg_2SO_4│Hg$ have bee measured at temperature from 20 to $35^{\circ}C$ and at pressures from 1 to 2500 atms. The emf of the cell increased with increasing pressure at constant temperature, and did with increasing temperature at constant pressure. The net change of solvation number(k) of the cell reaction was 41.96 at $25^{\circ}C$, and kept constant value with pressure, while, K and ${\Delta}S^{\circ}$ increased with pressure, but whereas ${\Delta}G^{\circ}$ and ${\Delta}H^{\circ}$ decreased. Since the standard emf of the cell at high pressure can be calculated from the complete Nernst equation, the theory of chemical equilibrium could be developed with at high pressure as well as at the atmosphere.

• Journal of the Korean Chemical Society
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• v.35 no.3
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• pp.196-203
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• 1991

The $pK_a$ values of benzoic acid and meta, para-halogen substituted benzoic acids in MeOH-$H_2O$ mixtures (0∼80% of MeOH) have been determined at 25$^{\circ}$C using a conductometric method on the basis of the Fuoss-Kraus equation, and further verified using modified conductometric method of Gelb. The dependence of $pK_a$ on halogen substituents has been discussed in terms of substituent-constant (${\sigma}$), which is devided into electron-withdrawing inductive contribution (${\sigma}_1$) and electron-donating ${\pi}$-resonance one (${\sigma}_R$). The linear-dependence of ${\sigma}_1$'s on $D^{-1}$ with positive slope and that of ${\sigma}_R$'s on $D^{-1}$ with negative slope have been interpreted on the basis of field effect and through-space interaction of ${\pi}$-lone pair of halogen substituent and ionization center via ${\pi}$-system of benzene ring.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.435-444
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• 2001

WC-( $Ti_{1-x}$ A $l_{x}$) N coatings of constant changing Al concentration were deposited on S45C substrates by high-ionization sputtered PVD method. The Al concentration could be controlled by using evaporation source for Al and fixing the evaporation rate of the metals (i.e, WC- $Ti_{0.86}$A $l_{0.14}$N, WC- $Ti_{0.72}$A $l_{0.28}$N, and WC- $Ti_{0.58}$A $l_{0.42}$N). The corrosion behavior of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings in a deaerated 3.5% NaCl solution was investigated by electrochemical corrosion tests and surface analyses. The measured galvanic corrosion currents between coating and substrate indicated that WC- $Ti_{0.72}$A $l_{0.28}$N coating showed the best resistance of the coating tested. The results of potentiodynamic polarization tests showed that the WC- $Ti_{0.72}$A $l_{0.28}$N coating deposited with 32W/c $m^2$ of Al target revealed higher corrosion resistance. This indicated that the WC- $Ti_{0.72}$A $l_{0.28}$N coating is effective in improving corrosion resistance. In EIS, the WC- $Ti_{0.72}$A $l_{0.28}$N coating showed one time constant loop and increased a polarization resistance of coating ( $R_{coat}$) relative to other samples. Compositional variations of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings were analyzed by EDS and XRD analysis was performed to evaluate the crystal structure and compounds formation behavior. Surface morphologies of the films were observed using SEM and AFM. Scratch test was performed to measure film adhesion strength.strength. adhesion strength.strength.

• Journal of the Korean Applied Science and Technology
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• v.23 no.2
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• pp.160-168
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• 2006

The conductances of trimethyltetradecylammonium bromide (TTAB) plus triphenyltetradecyl phosphonium bromide (TTPB) and TTAB plus trimethylhexadecylammonium bromide (HTAB) over the entire mole fraction range of TTAB were measured in water and in cyclodextrin plus water mixtures at fixed 4 and 8 mM of cyclodextrin at $30^{\circ}C$. The conductivity plot for both binary mixtures shows a single break from which the mixed critical micelle concentration and degree of micelle ionization were computed. From the slope of the conductivity curve, the equivalent ionic conductivities of the monomeric, associated, and the micelle states were calculated and discussed with respect to the surfactant-cyclodextrin complexation in the whole mole fraction range of both surfactant binary mixtures. The association constant K between the respective monomeric surfactant and cyclodextrin cavity of fixed 4 mM cyclodextrin was computed by considering 1:1 association from the surface tension measurement. A comparison among the K values for HTAB-cyclodetrin, TTAB-cyclodextrin, and TTPB-cyclodextrin shows that the former complexation is significantly stronger in comparison to the other ones due to the longer hydrophobic tail.