• 열처리공학회지
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• 제13권4호
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• pp.259-264
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• 2000

In this study, we quantitatively measure the ion ranges of arsenic with energies ranging from 10 KeV to 100 KeV, implanted at $3^{\circ}$, $9^{\circ}$ $15^{\circ}$ the (100) plane, and the damage created during ion implantation. To obtain detailed information of ion range and damage distributions in low energy region where elastic collisions dominate the slowing down process, molecular dynamics computer simulation was performed and compared to the existing results. The effects of implant energy and degree on damage generation are present. The number of vacancy were calculated from the deposited energy using Kinchin-Pease equation. In the energy range 10 keV-100 keV, simulations show that the number of Frenckel pairs produced by As-ion bimbardment is 9 and incident angle dependence of the vacancy was the same but defects were distributed at different depth.

• 대한기계학회논문집A
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• 제32권3호
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

• 한국광학회지
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• 제15권4호
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• pp.309-312
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• 2004

레이저 홀로그래피 방법과 반응성 이온식각 방법(RIE: reactive ion etching)을 사용하여 2차원 광자결정을 제작하였다. 육변형(hexagonal) 및 사변형(square) 광자결정 격자는 첫 번째 레이저 노광 후 시편을 각각 60도 및 90도 회전하고 다시 두 번째 노광을 통하여 제작할 수 있었다. 또한 사변형 광자결정 격자의 나노컬럼(nanocolumn)의 크기와 주기는 레이저 입사각에 따라 각각 125∼145 nm, 220∼290 nm로 미세한 조정이 가능하였다. 마지막으로 CH$_4$/H$_2$ 가스를 이용한 반응성 이온식각 방법을 통하여 aspect ratio가 1.5 이상인 InP/InGaAsP nanocolumn을 제작 할 수 있었다.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 춘계학술발표회
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• pp.411-412
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• 2005

There are some differences as a result of comparison between internal and external standard method. Thin-film XRD was used to measure the thin damaged layer by proton irradiation. Experiment was performed by external standard method to measure bulk sample accurately. A little changes of crystallite size and lattice parameter by small dose were observed. X-ray penetrates too deeply above damaged layer of graphite despite of small X-ray incident angle.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2005년도 제31회 KOSCO SYMPOSIUM 논문집
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• pp.328-336
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• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.

• 한국정밀공학회지
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• 제23권8호
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• pp.72-79
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• 2006

We measured grating pitch standards using optical diffractometry and analyzed measurement uncertainty. Grating pitch standards have been used widely as a magnification standard for a scanning electron microscope (SEM) and a scanning probe microscope (SPM). Thus, to establish the meter-traceability in nano-metrology using SPM and SEM, it is important to certify grating pitch standards accurately. The optical diffractometer consists of two laser sources, argon ion laser (488 nm) and He-Cd laser (325 nm), optics to make an incident beam, a precision rotary table and a quadrant photo-diode to detect the position of diffraction beam. The precision rotary table incorporates a calibrated angle encoder, enabling the precise and accurate measurement of diffraction angle. Applying the measured diffraction angle to the grating equation, the mean pitch of grating specimen can be obtained very accurately. The pitch and orthogonality of two-dimensional grating pitch standards were measured, and the measurement uncertainty was analyzed according to the Guide to the Expression of Uncertainty in Measurement. The expanded uncertainties (k = 2) in pitch measurement were less than 0.015 nm and 0.03 nm for the specimen with the nominal pitch of 300 nm and 1000 nm. In the case of orthogonality measurement, the expanded uncertainties were less than $0.006^{\circ}$. In the pitch measurement, the main uncertainty source was the variation of measured pitch values according to the diffraction order. The measurement results show that the optical diffractometry can be used as an effective calibration tool for grating pitch standards.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.41-41
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• 2008

In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.

• 한국재료학회지
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• 제8권7호
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• pp.634-640
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• 1998

HBr을 이용한 트렌치 식각시 식각 방지막의 형성과 이들이 결함 생성 및 분포에 미치는 영향을 고분해능 투과전자현미경을 이용하여 연구하였다. $O_2$ 및 다른 첨가 가스로 $SiO_xF_y$, $SiO_xBr_y$ 등의 식각 방지막을 표면에 형성시켜 벽면 undercut을 방지하고 표면의 거칠기를 감소할 수 있었으며, 이후의 트렌치 채움 공정에서 void 가 없는 잘 채원진 구조를 얻을 수 있었다. 형성된 식각 방지막은 격자 결함의 생성 및 이들의 분포에 영향을 미쳤다. 대부분의 식각 유도 결함들은 트렌치 바닥의 가장자리에서 $10\AA$ 이내의 깊이로 분포하였으며, 잔류막의 두께에 의존하였다. 두꺼운 잔류막층 아래로는 결함들이 거의 사라졌으며, 결함층의 깊이와 잔류막 두께는 대체로 반비례하는 것을 나타났다. 기판 내에 존재하는 결정학적인 결함들은 식각종의 입사각이나 에너지에 의존하는 반면에,식각된 표면에서 관찰되는 결함들은 트렌치 식각동안 형성되는 이러한 잔류막의 두께에 크게 의존하는 것으로 나타났다.