• Title/Summary/Keyword: Ion-formation process

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Corrosion Characteristics of Cast Stainless Steel under Plasma Ion Nitriding Process Temperature in Marine Environment (주조 스테인리스강의 해양환경 하에서 플라즈마 이온질화 공정온도에 따른 부식특성 연구)

  • Chong, Sang-Ok;Kim, Seong-Jong
    • Journal of Surface Science and Engineering
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    • v.50 no.6
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    • pp.504-509
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    • 2017
  • In order to improve corrosion resistance for cast stainless steel in seawater, the characteristics of corrosion resistance after plasma ion nitriding was investigated. Plasma ion nitriding process was conducted in a mixture of nitrogen of 25% and hydrogen of 75% at substrate temperature ranging from 350 to $500^{\circ}C$ for 10 hours using pulsed-DC glow discharge plasma with working pressure of 250 Pa in vacuum condition. Corrosion tests were carried out for as-received and plasma ion nitrided specimens. The corrosion characteristics were investigated by measurement of weight loss and observation of surface morphology. In anodic polarization experiment, relatively less damage depth and weight loss were presented at a nitrided temperature of $400^{\circ}C$, attributing to the formation of S-phase.

The surface propery change of multi-layer thin film on ceramic substrate by ion beam sputtering (이온빔 스퍼터링법에 의한 다층막의 표면특성변화)

  • Lee, Chan-Young;Lee, Jae-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.259-259
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    • 2008
  • The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

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The Characteristics of Iron(Fe) Floc Formation for Treatment of Acid Mine Drainage (산성 광산 배수의 처리를 위한 철(Fe) 성분의 플럭 형성 특성)

  • Song, Kun-Ho;Lee, Kwang-Rae
    • Journal of Industrial Technology
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    • v.33 no.A
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    • pp.89-92
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    • 2013
  • The characteristics of floc formation of the iron(Fe) ions was studied for developing the process treating the acid mine drainage. The metal ions in aqueous solution oxidized with oxygen in air, which generated hydrogen ion and lowered the pH of the aqueous solution. The iron(Fe) ions were formed into flocs by the acid-base reaction with the added $Ca(OH)_2$ for the neutralizing the solution. There were several variables affecting the formation, size and color of floc; whether air was present or not, air feeding rate, oxidizing time, concentration of $Ca(OH)_2$, the acid-base reaction time of the $iron(Fe)-Ca(OH)_2$. For proper formation of the $iron(Fe)-Ca(OH)_2$ flocs and developing the floc treating system, the control variables mentioned above should be considered.

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First-principles Study on the Formation of Solid-Electrolyte Interphase on the LiMn2O4 Cathode in Li-Ion Batteries (제일원리 전산모사를 통한 리튬 이온 전지의 LiMn2O4 전극-전해질 계면 반응 분석)

  • Choe, Dae-Hyeon;Gang, Jun-Hui;Han, Byeong-Chan
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.97-97
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    • 2016
  • Development of advanced Li-ion battery cells with high durability is critical for safe operation, especially in applications to electric vehicles and portable electronic devices. Understanding fundamental mechanism on the formation of a solid-electrolyte interphase (SEI) layer, which plays a substantial role in the electrochemical stability of the Li-ion battery, in a cathode was rarely reported unlike in an anode. Using first-principles density functional theory (DFT) calculations and ab-initio molecular dynamic (AIMD) simulations we demonstrate atomic-level process on the generation of the SEI layer at the interface of a carbonate-based electrolyte and a spinel $LiMn_2O_4$ cathode. To accomplish the object we calculate the energy band alignment between the work function of the cathode and frontier orbitals of the electrolyte. We figure out that a proton abstraction from the carbonate-based electrolyte is a critical step for the initiation of an SEI layer formation. Our results can provide a design concept for stable Li-ion batteries by optimizing electrolytes to form proper SEI layers.

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Effect of Process Parameters on TSV Formation Using Deep Reactive Ion Etching (DRIE 공정 변수에 따른 TSV 형성에 미치는 영향)

  • Kim, Kwang-Seok;Lee, Young-Chul;Ahn, Jee-Hyuk;Song, Jun Yeob;Yoo, Choong D.;Jung, Seung-Boo
    • Korean Journal of Metals and Materials
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    • v.48 no.11
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    • pp.1028-1034
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    • 2010
  • In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

Removal Characteristics of Copper Ion in Wastewater by Employing a Biomass from Liquor Production Process as an Adsorbent (주류 제조과정에서 발생하는 바이오매스를 흡착제로 한 구리 제거 특성)

  • Baek, Mi-Hwa;Kim, Dong-Su
    • Journal of Korean Society on Water Environment
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    • v.22 no.4
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    • pp.626-631
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    • 2006
  • The adsorption features of copper ion have been investigated by taking the barley residue which occurring from the beer production process as an adsorbent. Under the experimental conditions, adsorption equilibrium of copper ion was attained within 30 minutes after the adsorption started and the adsorption reaction was observed to be first order. As the temperature increased, the adsorbed amount of copper ion at equilibrium was also increased, which indicated that the adsorption reaction was endothermic. Based on the experimental results which obtained by varying the temperatures, several thermodynamic parameters for copper adsorption reaction were estimated. Regarding the electrokinetic behavior of barley residue, its electrokinetic potential was observed to be positive below pH 5 and turned into negative above this pH. In the pH range from 1.5 to 4, copper adsorption was found to be increased, which was well explained by the electrokinetic behavior of barley residue in the pH range. When nitrilotriacetic acid, which is a complexing agent, was coexisted with copper ion, equilibrium adsorption of copper ion was decreased and this was presumed to be due to the formation of metal complex. In addition, the adsorbed amount of copper ion was examined to be increased when $KNO_3$ was coexisted, however, it approached a saturated value above a certain concentration of $KNO_3$.

Nucleation, Growth and Properties of $sp^3$ Carbon Films Prepared by Direct $C^-$ Ion Beam Deposition

  • Kim, Seong I.
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.173-176
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    • 1997
  • Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

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Solid-Electrolyte Interphase in the Spinel Cathode Exposed to Carbonate Electrolyte in Li-Ion Battery Application: An ab-initio Study

  • Choe, Dae-Hyeon;Gang, Jun-Hui;Han, Byeong-Chan
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.169-169
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    • 2017
  • Due to key roles for the electrochemical stability and charge capacity the solid-electrolyte interphase (SEI) has been extensively studied in anodes of a Li-ion battery cell. There is, however, few of investigation for cathodes. Using first-principles based calculations we describe atomic-level process of the SEI layer formation at the interface of a carbonate electrolyte and $LiMn_2O_4$ spinel cathode. Furthermore, using beyond the conventional density functional theory (DFT+U) calculations we examine the work function of the cathode and frontier orbitals of the electrolyte. Based on the results we propose that proton transfer at the interface is an essential mechanism initiating the SEI layer formation in the $LiMn_2O_4$. Our results can guide a design concept for stable and high capacity Li-ion battery cell through screening an optimum electrolyte fine-tuned energy band alignment for a given cathode.

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Modeling and Simulation on Ion Implanted and Annealed Indium Distribution in Silicon Using Low Energy Bombardment (낮은 에너지로 실리콘에 이온 주입된 분포와 열처리된 인듐의 거동에 관한 시뮬레이션과 모델링)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.12
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    • pp.750-758
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    • 2016
  • For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

Efficiency of Gas-Phase Ion Formation in Matrix-Assisted Laser Desorption Ionization with 2,5-Dihydroxybenzoic Acid as Matrix

  • Park, Kyung Man;Ahn, Sung Hee;Bae, Yong Jin;Kim, Myung Soo
    • Bulletin of the Korean Chemical Society
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    • v.34 no.3
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    • pp.907-911
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    • 2013
  • Numbers of matrix- and analyte-derived ions and their sum in matrix-assisted laser desorption ionization (MALDI) of a peptide were measured using 2,5-dihydroxybenzoic acid (DHB) as matrix. As for MALDI with ${\alpha}$-cyano-4-hydroxy cinnamic acid as matrix, the sum was independent of the peptide concentration in the solid sample, or was the same as that of pure DHB. This suggested that the matrix ion was the primary ion and that the peptide ion was generated by matrix-to-peptide proton transfer. Experimental ionization efficiencies of $10^{-5}-10^{-4}$ for peptides and $10^{-8}-10^{-7}$ for matrices are far smaller than $10^{-3}-10^{-1}$ for peptides and $10^{-5}-10^{-3}$ for matrices speculated by Hillenkamp and Karas. Number of gas-phase ions generated by MALDI was unaffected by laser wavelength or pulse energy. This suggests that the main role of photo-absorption in MALDI is not in generating ions via a multi-photon process but in ablating materials in a solid sample to the gas phase.