• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8679-8683
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• 2015

Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.

• Analytical Science and Technology
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• v.7 no.4
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• pp.527-540
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• 1994

The surface microstructure modification by $N^+ion$ implantation into 7050A1 alloy was investigated. Ion implantation method is to implant physically accelerated ions to the surface of a substrate. High doses of nitrogen($5{\times}10^{15}ions/cm^2$, $5{\times}10^{17}ions/cm^2$, $8{\times}10^{17}ions/cm^2$) were implanted into 7050A1 alloy using accelerating voltage of 100KeV and current density of $23.1{\mu}A/cm^2$. The implanted layers were characterized by EPMA, AES, XRD, and TEM. The experimental results were compared with computer simulation data. The results showed that AlN was formed from the surface to $4000{\AA}$ depth with Gaussian distribution and the damage region was also observed. This surface modification by $N^+ion$ implantation increased the microhardness of 7050A1 alloy surface.

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.1
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• pp.78-94
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• 2005

Purpose. The purpose of this study was to compare the effects of various surface treatments by measuring resonance frequency and histomorphometric analyses. Material and methods. In 5 adult dogs, the mandibular premolar were extracted. Six months later, 30 screw titanium implants (Dentium Co., Seoul, Korea) 6mm in length and 3.4mm in diameter, were placed in the mandibles of 5 dogs. Implants were divided into five groups following to surface treatment methods ; Group 1 is machined controls, Group 2 is sandblasted with large grit and acid-etched (SLA), Group 3 is anodized (Autoelectric Co., Korea, 660Hz, Duty10), Group 4 is hydroxyapatite(HA) coated by ion beam assisted deposition(E-beam), Group 5 is hydroxyapatite(HA) coated with Sol-gel coating process. Resonance frequency was measured implant placement immediately, and 3, 6 weeks and 10 weeks of healing perods. With the animal subject's sacrifice 10 weeks after implantation, implants were removed on bloc and histologic and computer-based histomorphometric analyses were performed. Histomorphometric analysis involved quantification of the entire bone to metal contact around the implants. Statistical analyses were performed using the SPSS for Windows (ver. 9.0 SPSS Inc.) Statistical differences were considered significant at P<0.05. Results. The results were as follows : 1) In five groups, mean value of resonance frequency analysis(RFA) were highest in group 5 (Sol-gel implant) at implantation and those of group 4 (E-beam)was highest at 10 weeks . but there was no correlation between surface treatments and RFA. 2) In all surface treatment groups, the RFA values of implants decreased until 3 weeks and increased to 10 weeks. 3) The percentage of direct bone-to-implant contact (BIC) had statistical significance between five groups in cancellous bone, (P<0.05) the percentage of bone density inside the thread had no statistical significance between five groups. (P>0.05) 4) There was a significant difference between cortical bone and cancellous bone in BIC. (P<0.05) and bone density. (P<0.05) 5) There was a correlation between the RFA value of implants at 10 weeks and BIC in cancellous bone, and between the RFA value of implants at 10 weeks and bone density in cortical bone. (P<0.05). Conclusions. These results indicate that surface treatment does not affect the implant stability in case of good bone quality.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.382-382
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• 2012

Nanostructures have a larger surface/volume ratio as well as unique mechanical, physical, chemical properties compared to existing bulk materials. Materials for biomedical implants require a good biocompatibility to provide a rapid recovery following surgical procedure and a stabilization of the region where the implants have been inserted. The biocompatibility is evaluated by the degree of the interaction between the implant materials and the cells around the implants. Recent researches on this topic focus on utilizing the characteristics of the nanostructures to improve the biocompatibility. Several studies suggest that the degree of the interaction is varied by the relative size of the nanostructures and cells, and the morphology of the surface of the implant [1, 2]. In this paper, we fabricate the nanowires on the Ti substrate for better biocompatible implants and other biomedical applications such as artificial internal organ, tissue engineered biomaterials, or implantable nano-medical devices. Nanowires are fabricated with two methods: first, nanowire arrays are patterned on the surface using e-beam lithography. Then, the nanowires are further defined with deep reactive ion etching (RIE). The other method is self-assembly based on vapor-liquid-solid (VLS) mechanism using Sn as metal-catalyst. Sn nanoparticle solutions are used in various concentrations to fabricate the nanowires with different pitches. Fabricated nanowries are characterized using scanning electron microscopy (SEM), x-ray diffraction (XRD), and high resolution transmission electron microscopy (TEM). Tthe biocompatibility of the nanowires will further be investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.327-333
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• 1999

Controlled Ca impurity implanted inner crack-like pore in the high purity alumina bi-crystal had been created by micro-fabrication technique, which includes ion implantation, photo-lithography, Ar ion milling, and hot press. The morphological change and the growth od crystals formed by heat treatment in Ca doped high purity single crystal alumina, were observed using optical microscopy. The dot was developed and hexagon like crystal appeared on inner surface of crack-like pore after heat treatment. Bar type crystals, probably CaO . $6Al_2O_3$, were observed on the inner surface of 100ppm Ca implanted specimen after 1 hour heat treatment at $1,500^{\circ}C$, but this bar type crystal disappeared after 1 hour heat treatment at $1,600^{\circ}C$. This disappearance means that there should be little increase of Ca solubility limit to alumina and/or changes of diffusion coefficient of Ca in alumina around this temperature.

• Journal of Periodontal and Implant Science
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• v.38 no.sup2
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• pp.373-384
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• 2008

Purpose: The aim of this study is to compare the healing response of various Hydroxyapatite(HA) coated dental implants by Ion-Beam Assisted Deposition(IBAD) placed in the surgically created circumferential gap in dogs. Materials and methods: In four mongrel dogs, all mandibular premolars and the first molar were extracted. After an 8 weeks healing period, six submerged type implants were placed and the circumferential cylindrical 2mm coronal defects around the implants were made surgically with customized step drills. Groups were divided into six groups : anodized surface, anodized surface with 150nm HA and heat treatment, anodized surface with 300nm HA and heat treatment, anodized surface with 150nm HA and no heat treatment, and anodized surface with 150nm HA, heat treatment and bone graft, anodized surface with bone graft. The dogs were sacrificed following 12 weeks healing period. Specimens were analyzed histologically and histomorphometrically. Results: During the healing period, healing was uneventful and implants were well maintained. Anodized surface with HA coating and $430^{\circ}C$ heat treatment showed an improved regenerative characteristics. Most of the gaps were filled with newly regenerated bone. The implant surface was covered with bone layer as base for intensive bone formation and remodeling. In case that graft the alloplastic material to the gaps, most of the coronal gaps were filled with newly formed bone and remaining graft particles. The bone-implant contact and bone density parameters showed similar results with the histological findings. The bone graft group presented the best bone-implant contact value which had statistical significance. Conclusion: Within the scope of this study, nano-scale HA coated dental implants appeared to have significant effect on the development of new bone formation. And additional bone graft is an effective method in overcoming the gaps around the implants.

• Corrosion Science and Technology
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• v.11 no.5
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• pp.191-195
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• 2012

The aim of this study was to investigate effects of hafnium content on the corrosion behavior of Ti alloys in electrolyte containing chloride ion. For this study, Ti-Hf binary alloys contained 10 wt%, 20 wt% and 30 wt% Hf were manufactured in a vacuum arc-melting furnace and subjected to heat treatment for 12h at $1000^{\circ}C$ in an argon atmosphere. The pitting corrosion behavior of the specimens was examined through potentiodynamic and potentiostatic tests in 0.9 wt% NaCl electrolyte at $36.5{\pm}1^{\circ}C$. The corrosion morphology of Ti-xHf alloys was investigated using optical microscopy (OM) and X-ray diffractometer (XRD). From the optical microstructures and XRD results, needle-like martensite ($\alpha$') phases of the Ti-xHf alloys increased with an increase of Hf addition. Corrosion current density $(I_{corr})$ and current density $(I_{300mV})$ in passive region decreased, whereas, corrosion potential increased with Hf content. At the constant potential ($300mV_{SCE}$), current density decreased as time increased.