• Electrical & Electronic Materials
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• v.8 no.6
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.90-94
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• 1995

Defects introduced by Si, Ge preamorphization and their effects on the dopant diffusion and electrical characteristics. Good crystalline quality are obtained after the annealing of Ge ion double implanted samples. The defect clusters under the a/c interface are expected to extend up to the deep in the Si ion implanted samples. The dislocation loops near the junction absorb the interstitial Si atoms resolving from the defect cluster and result in the prevention of enhanced boron diffusion near the tail region of boron profile and show good reverse current charactristics.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.557-560
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• 1998

We previously developed and presented the 3D ion implantation simulation code, TRICSI. In this paper, we performed the multiple implants into (100) silicon substrate with our recently enhanced version. Our results for the multiple implants were compared with the previously published SIMS data and obtained the good agreements. In this paper the channeling behaviour of implanted impurity and the damage accumulation are analyzed and discussed in the simple 3D structure, named the Hole structure which has a rectangular implant window.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.179-180
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• 2015

pure Mg and some Mg alloys are relatively rapidly corroded after operation, resulting in the decrease of mechanical strength and change of local ion concentration. In this study, the corrosion mechanism of biodegradable implant materials was investigated by corrosion tests of the Mg alloy in Hank's solution. Particularly, the crystal structures and chemical bonding state of corrosion reactants was systematically examined.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.1-6
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• 2000

The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

• Journal of Periodontal and Implant Science
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• v.28 no.4
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• pp.601-611
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• 1998

Ion irradiation is a very promising tool to modify the chemical structure and physical properities of polymers. This study was aimed to evaluate the cellular adhesion to ion beam-irradiated surface of biodegradable poly-l-lactide(PLLA) membrane. The PLLA membrane samples were irradiated by using 35 KeV $Ar^+$ to fluence of $5{\times}10^{13}$, $5{\times}10^{14}$ and $5{\times}10^{15}\;ion/cm^2$. Water contact angles to control and each dose of ion beam-irradiated PLLA membranes were measured. Cultured fetal rat calvarial osteoblasts were seeded onto control and each dose of ion beam-irradiated PLLA membranes and cultured. After 24 hours, each PLLA membranes onto which osteoblasts attached were examined by scanning electron microscopy(SEM). Osteoblasts were removed from each PLLA membrane and then, the vitality and the number of cells were calibrated. Alkaline phosphatase of detached cells from each PLLA membranes were measured. Ion beam-irradiated PLLA membranes showed no significantly morphological change from control PLLA membranes. In the measurement of water contact angle to each membrane, the dose range of ion beam employed in this study reduced significantly contact angles. Among them, $5{\times}10^{14}\;ion/cm^2$ showed the least contact angle. The vitalities of osteoblastes detached from each membranes were confirmed by flow cytometer and well attached cells with their own morphology onto each membranes were observed by SEM. A very strong improvement of the cell adhesion and proliferation was observed for ion beam-irradiated surfaces of PLLA membranes. $5{\times}10^{15}\;ion/cm^2$ exhibited the most strong effect also in cellular adherence. ALPase activities also tended to increase in ion beam-irradiated membranes but statistical differences were not found. These results suggested that ion beam irradiation is an effective tool to improve the adhesion and spreading behaviour of the cells onto the biodegradable PLLA membranes for the promotion of membrane-tissue integration.

• Corrosion Science and Technology
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• v.10 no.6
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• pp.212-217
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• 2011

In this study, corrosion characteristics of TiN and ZrN film on the abutment screw by arc-ion plating were investigated using a potentiodynamic anodic polarization test in deaerated 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The surface morphologies of the coating layers before and after corrosion test were investigated by a field-emission scanning electron microscope (FE-SEM) and a energy dispersive x-ray spectroscopy (EDS). The surfaces of the TiN and ZrN coated abutment screws showed the smooth surfaces without mechanical defects like scratches which can be formed during the manufacturing process, compared with those of the non-coated abutment screw. The corrosion and passive current densities of TiN and ZrN coated abutment screws were lower than those of the non-coated abutment screw.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$ thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$ thin films were etched with C1$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin films is 285 $\AA$/min under C1$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$ film is approximately 65$^{\circ}$and free of residues at the sidewall.

• Journal of Biomedical Engineering Research
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• v.25 no.2
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• pp.157-163
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• 2004

Nitrogen ion implantation and ion plating techniques were applied for improvement of the wear resistance of metallic implant materials. In this work, the wear dissolution behaviour of a nitrogen ion implanted super stainless steel (S.S.S, 22Cr-20Ni-6Mo-0.25N) was compared with those of S.S.S, 316L SS and TiN coated 316L SS. The amounts of Cr and Ni ions worn-out from the specimens were Investigated using an electrothermal atomic absorption spectrometry. Furthermore, the Ti(Grade 2) disks were coated with TiN, ZrN and TiCN by use of low temperature arc vapor deposition and the wear resistance of the coating layers was compared with that of titanium. The chemical compositions of the nitrogen ion implanted and nitride coated layers were examined with a scanting auger electron spectroscopy. It wat observed that the metal ions released from the nitrogen ion implanted S.S.S surface were significantly reduced. From the results obtained, it was shown that the nitrogen ion implanted zone obtained with 100 KeV ion energy was easily removed within 200,000 revolutions from a wear dissolution testing under a similar load condition when applied to artificial hip joint. The remarkable improvement in wear resistance weir confirmed by the nitrides coated Ti materials and the wear properties differ greatly according to the chemical composition of the coating layers. for specimens with the same coating thickness of about 3$\mu\textrm{m}$, TiCN coated Ti showed the highest wear resistance. However, after removing the coating layers, the wear rates of all nitrides coated Ti reverted to their normal rates of below 10,000 revolutions from Ti-disk-on-disk wear testing under the same load condition. From the results obtained, it is suggested that the insufficient depth of the 100 Kel N$\^$＋/ ion implanted zone and of the nitrides coated layers of 3$\mu\textrm{m}$ are subject to restriction when used as frictional parts of load bearing implants.