• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1246-1249
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• 1994

Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.

• 한국진공학회지
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• 제5권4호
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• pp.292-300
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• 1996

비정질 고체시료에 입사한 이온의 산란과 탄성충돌에 의한 시료원자의 산란을 몬테칼로 방법으로 전산모사 프로그램을 개발하였다. 핵산란은 Kalbitzer와 Oetzmann이 실험적인 검증을 통하여 보정한 만유산란 단면적식을 사용하고, 전자적인 에너지 손실은 Lindhard-Scharff와 Bethe의 공식들을 내삽법으로 적용하였다. 그외의 공식들은 최근에 이르기까지 대부분의 전산모사 프로그램에서 일반적으로 사용하는 방법을 적용하였다. 이온들의 산란형태 및 산란 비거리 등의 결과가 기존의 TRIM과 PIBER 프로그램 결과뿐만 아니라 이미 보고된 실험치와 잘 일치함을 보여 주었다. 또한 프로그램의 사용자 편의를 위하여 Graphic User Interface 방식을 사용하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.64-64
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• 2010

Ice film surfaces were examined by using the reactive ion scattering (RIS) of low energy (<35 eV) cesium ion beams. Neutral molecules (X) on the surface were detected in the form of cesium-molecule ion clusters (CsX+). Ionic species on the surface were desorbed from the surface via a low energy sputtering (LES) process below the threshold energy of secondary ion emission. The RIS and LES methods allowed us to study the H/D exchange reactions between H2O and D2O molecules on the surface and the associated proton transfer mechanisms. Specifically, H/D exchange kinetics was examined for D2O ice films (~10 BL) covered with a small amount of H2O (<0.5 BL), in the presence or absence of HCl adsorbates which provided excess protons on the surface.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.30-35
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• 2002

We show that a combined technique of Cs$^{+}$ reactive ion scattering (Cs$^{+}$ RIS) and low-energy secondary ion mass spectrometry (LESIMS) provides a powerful means for probing molecular films and their surface reactions. Simple molecules, including HCI, NH$_3$, D$_2$O, and their mixtures, were deposited into a thin film of several monolayer thickness on Ru(001) at low temperature in vacuum, and the surface was characterized by Cs$^{+}$ RIS and LESIMS. On pure films, D$_2$O, HCI, and NH$_3$ existed in the corresponding molecular states. When HCI and NH$_3$ were co-deposited, ammonium ion(NH$_4$$^{+}$) was readily formed by proton transfer from HCI to NH$_3$. In the presence of water molecules, HCI ionized first to hydronium ion(H$_3$O$^{+}$), which subsequently transferred proton to NH$_3$ to form NH$_4$$^{+}$. The proton transfer, however, did not occur to a completion on ice, in contrast to the complete reaction in aqueous solutions.s solutions.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.471-478
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• 2002

Vacuum evaporated cadmium sulphide (CdS) thin films were implanted with $Ar^+$ and $N^+$ for different doses. The properties of the ion implanted CdS thin films have been analysed using XRD, optical transmittance spectra, and Raman scattering studies. Formation of Cd metallic clusters were observed in ion implanted films. The band gap of $Ar^+$ doped films decreased from 2.385 eV of the undoped film to 2.28 eV for the maximum doping. In the case of $N^+$ doped film the band gap decreased from 2.385 to 2.301 eV, whereas the absorption coefficient values increased with the increase of implantation dose. On implantation of both types of ions, the Raman peak position appeared at $299\textrm{cm}^{-1}$ and the FWHM changed with the ion dose.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.107.1-107.1
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• 2014

We have developed and commercialize a time-of-flight - medium energy ion scattering spectrometry (TOF-MEIS) system (model MEIS-K120). MEIS-K120 adapted a large solid acceptance angle detector that results in high collection efficiency, minimized ion beam damage while maintaining a similar energy resolution. In addition, TOF analyzer regards neutrals same to ions which removes the ion neutralization problems in absolute quantitative analysis. A TOF-MEIS system achieves $7{\times}10^{-3}$ energy resolution by utilizing a pulsed ion beam with a pulse width 350 ps and a TOF delay-line-detector with a time resolution of about 85 ps. TOF-MEIS spectra were obtained using 100 keV $He^+$ ions with an ion beam diameter of $10{\mu}m$ with ion dose $1{\times}10^{16}$ in ordinary experimental condition. Among TOF-MEIS applications, we report the quantitative compositional profiling of 3~5 nm CdSe/ZnS QDs, As depth profile and substitutional As ratio of As implanted/annealed Si, Ionic Critical Dimension (CD) for FinFET, Direct Recoil (DR) analysis of hydrogen in diamond like carbon (DLC) and InxGayZnzOn on glass substrate.

• 한국세라믹학회지
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• 제40권8호
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• pp.765-769
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• 2003

2 keV의 저에너지 He$^{+}$ 이온을 사용한 비행시간형 직충돌 이온산란 분광법을 이용하여 Si(100) 표면의 원자구조를 해석하였다. [011] 방위를 따라 이온빔을 입사시키고, 입사 각도에 따른 산란된 이온의 강도를 측정하였다. 20$^{\circ}$, 28$^{\circ}$, 46$^{\circ}$, 63$^{\circ}$, 80$^{\circ}$등의 5가지 입사각도에서 집속 효과가 일어났다. 이 각도를 설명하기 위해 그림자 원뿔을 계산하여 원자의 위치를 모사하였으며, 이 결과는 실험과 잘 일치하였다. 28$^{\circ}$, 46$^{\circ}$, 63$^{\circ}$ 및 80$^{\circ}$에서 일어나는 4개의 집속 효과는 표면 최외층에서 이 합체가 자리하지 않는 {011}면을 따라서 발생한 것이며 벌크 구조가 반영된 결과이다. 그 반면에 이합체를 이루는 원자사이에서 발생한 산란은 20$^{\circ}$에서 집속 효과를 나타내었다.

• Journal of the Optical Society of Korea
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• 제16권1호
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• pp.80-84
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• 2012

A high reflectance mirror, which has very low absorption and scattering loss, was coated onto a crystalline substrate by ion beam sputtering and then annealed at $450^{\circ}C$. We carefully selected the mirror coating material, and designed the high reflectance mirror, in order to avoid UV degradation which comes from the He-Ne plasma. We measured the surface roughness of the Zerodur substrate using phase shift interferometry and atomic force microscopy, and compared it with the TIS scattering of the mirror. The cavity ring-down method was used to measure the absorption of the mirror, and the thin film structure was correlated to its results. We also compared the optical properties of coated mirrors before and after annealing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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• pp.139-140
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• 1996

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.187-188
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• 2007

Four kinds of mirror substrates with same surface roughness were fabricated. On those substrates, a dielectric multi-layer coating with high reflectivity was deposited by ion beam sputtering technique. Most of the fused silica mirrors showed lower scattering than the ZERODUR mirrors one, which deposited on substrates similar in surface roughness. The ZERODUR mirrors scattering strongly depend on the micro-structure of $Ta_2O_5/SiO_2$ thin films wear deposited on ZERODUR substrates.