Development and Applications of TOF-MEIS (Time-of-Flight - Medium Energy Ion Scattering Spectrometry)

We have developed and commercialize a time-of-flight - medium energy ion scattering spectrometry (TOF-MEIS) system (model MEIS-K120). MEIS-K120 adapted a large solid acceptance angle detector that results in high collection efficiency, minimized ion beam damage while maintaining a similar energy resolution. In addition, TOF analyzer regards neutrals same to ions which removes the ion neutralization problems in absolute quantitative analysis. A TOF-MEIS system achieves $7{\times}10^{-3}$ energy resolution by utilizing a pulsed ion beam with a pulse width 350 ps and a TOF delay-line-detector with a time resolution of about 85 ps. TOF-MEIS spectra were obtained using 100 keV $He^+$ ions with an ion beam diameter of $10{\mu}m$ with ion dose $1{\times}10^{16}$ in ordinary experimental condition. Among TOF-MEIS applications, we report the quantitative compositional profiling of 3~5 nm CdSe/ZnS QDs, As depth profile and substitutional As ratio of As implanted/annealed Si, Ionic Critical Dimension (CD) for FinFET, Direct Recoil (DR) analysis of hydrogen in diamond like carbon (DLC) and InxGayZnzOn on glass substrate.