• Journal of the Korean Institute of Telematics and Electronics D
• /
• 제35D권5호
• /
• pp.1-10
• /
• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• 제34D권10호
• /
• pp.14-23
• /
• 1997

An MMIC downconverting mixer for cellular phone application has been successfully developed using an MMIC process including $1 \mu\textrm{m}$ ion implanted gaAs MESFET and passive lumped elements consisting of spiral inductor, $Si_3N_4$ MIM capacitor and NiCr resistor. The configuration of the mixer presented in this paper is single-ended dual-gate FET mixer with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit is $1.4 mm \times 1.03 mm $ including all input matching circuits and a mixing circuit. The conversion gian and noise figure of the mixer at LO powr of 0 dBm are 5.5dB and 19dB, respectively. The two-tone IM3 characteristics are also measured, showing -60dBc at RF power of -30dBm. Allisolations between each port show better than 20dB.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• 제35D권4호
• /
• pp.1-8
• /
• 1998

An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

• Journal of the Korean Ceramic Society
• /
• 제40권10호
• /
• pp.967-972
• /
• 2003

The inner-diameter 5 cm cold hollow cathode ion source was designed for the high current density and the homogeneous beam profile of ion beam. The ion source consisted of a cylindrical cathode, a generation part of magnetic field, a plasma chamber, convex type ion optic system with two grid electrode, and DC power supply system. The cold hollow cathode ion sources were classified into standard type (I), electron output electrode modified type (II). The operation of the ion source was done with discharge current, ion beam potential and argon gas flow rate. The modification of electron output electrode resulted in uniform plasma generation and uniform area of ion beam was extended from 5 cm to 20 cm. Improved ion source was evaluated with beam uniformity, ion current, team extraction efficiency, and ionization efficiency.

• Proceedings of the IEEK Conference
• /
• 대한전자공학회 2001년도 제14회 신호처리 합동 학술대회 논문집
• /
• pp.777-783
• /
• 2001

This paper is mainly concerned with the state of the practical developments of a constants PWM bridge type resonants DC-DC suitable converter for Nd:YAG Laser with a Microprocessor. (PIC16C54 & 8051) The use of IGBT power supply with feedback control of flashLamp currents imparts a advantages to Nd:YAG Laser for materials processing. these include the alility to tailor the pulseshape and modify pulse parameters on a pulse- by pulse basis. And Correct choice of pulseshape can enhance the repeatability of the process. as higher power IGBT became available, act ive pulseforming power supplies will find greater user in deep hole drilling machine By Using certain control tecniques, utililized in designing Pic16c54 from Microchip technology and Intel 8051, also Mornitoring from Microsoft Visual Basic 5, And it allowed us to designed and fabricate ahigh repel it ion rate and high power(HRHP) pulsed Nd:YAG laser system, As a result of that, the current pulsewidth could be contort led 200s to 350s(step 50s) , and the pulse repetition rate could be adjusted 500pps to 1150pps. In addition, in the case of one laser head consisting of a Nd:YAG laser rod and two flashlamps , the maximum laser output of 240w was produced at the condition of 350s and 1150pps, and that of about 480w was generated at the same condition when two laser heads were arranged in cascade.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.155.2-155.2
• /
• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of Korea Society of Industrial Information Systems
• /
• 제18권5호
• /
• pp.73-80
• /
• 2013

Recently, Li-ion battery is regarded as a potential energy storage device in the lime light and it can supply power to the satellite very effectively during eclipse. Because it has better features as high voltage range, large capacity and small volume than any other battery. Generally, multi cells are connected in series to use Li-ion batteries in satellite application. Since the internal resistance of cells is different each other, voltage in some cells can be overcharged or undercharged, so capacity of the cell is reduced and the life of whole battery pack is decreased. Therefore, a voltage balancing circuit with Fly-back converter is proposed and the voltage equalization of each cell is verified the prototype in this paper.

• Journal of the Korean Society for Heat Treatment
• /
• 제23권1호
• /
• pp.23-28
• /
• 2010

The cylindrical magnetron sputtering has not been widely used, although this system is useful for only certain types of applications such as fiber coatings. This paper presents electrode configurations which improved the complicacy of the target assembly by using the positive voltage power supply. It is a modified type which has a target constructed with a large cylindrical part, a conical part and a small cylindrical part. When positive voltage was applied to an anode, a stable glow discharge was established and a high deposition rate was obtained. The substrate bias current was monitored to estimate the effect of ion bombardment. As a result, it was found that the substrate current was large. With cylindrical and conical cathode magnetron sputter deposition on the surface of the substrate to prevent re-sputtering, ion impact because it can increase the effectiveness with excellent ductility and adhesion of Ti film deposition can be obtained. We board at the front end of the ground resistance of $5\;k{\Omega}$ attached to the substrate potential can be controlled easily, and Ti film deposition with excellent adhesion can be obtained. Microstructure and morphology of Ti films deposited on pure Cu wires were investigated by scanning electron microscopy in relation to preparation conditions. High level ion bombardment was found to be effective in obtaining a good adhesion for Cu wire coatings.

• Korean Chemical Engineering Research
• /
• 제53권3호
• /
• pp.269-275
• /
• 2015

The adsorption characteristics of ions were evaluated for the nitrate-selective carbon electrode (NSCE) in accordance with power supply methods. The NSCE was fabricated by coating the surface of a carbon electrode with anion-exchange resin powders with high selectivity for the nitrate ion. Capacitive deionization (CDI) experiments were performed on a mixed solution of nitrate and chloride ion in constant voltage (CV) and constant current (CC) modes. The number of total adsorbed ions in CV mode was 15% greater than that in CC mode. The mole fraction of adsorbed nitrate ion showed the maximum 58%, though the mole fraction was 26% in the mixed solution. This indicates that the fabricated NSCE is highly effective for the selective adsorption of nitrate ions. The mole fraction of adsorbed nitrate was nearly constant value of 55-58% during the adsorption period in CC mode. In the case of CV mode, however, the values increased from the initial 30% to 58% at the end of adsorption. We confirmed that the current supplied to cell is important factor to determine the selective removal of nitrate.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
• /
• pp.1-4
• /
• 2008

Fuel cells have the potential of providing several times higher energy storage densities than those possible using current state-of-the-art lithium-ion batteries, but current energy density of fuel cell system is not better than that of lithium-ion batteries. To achieve the high energy density, volume and weight of fuel cell system need to be reduced by miniaturizing system components such as stack, fuel tank, and balance-of-plant. In this paper, the thin flexible PCB (Printed circuit board) is used as a current collector to reduce the stack volume. Two end plates are made from light weight aluminum alloy plate. The plate surface is wholly oxidized through the anodizing treatment for electrical insulation. The opening rate of cathode plate hole is optimized through unit cell performance measurement of various opening rates. The performances are measured at room temperature and ambient pressure condition without any repulsive air supply. The active area of MEA is 10.08 $cm^2$ and active area per a unit cell is 1.68 $cm^2$. The peak power density is about 210 mW/$cm^2$ and the air-breathing planar stack of 2 Wis achieved as a small volume of 18 cc.