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http://dx.doi.org/10.12656/jksht.2010.23.1.023

A Study on the Improvement on the Target Structure in a Magnetron Sputtering Apparatus  

Bae, Chang-Hwan (Dept. of Mechatronics Eng., Graduate School of M.T. &M., Hoseo University)
Lee, Ju-Hee (Dept. of Mechatronics Eng., Graduate School of M.T. &M., Hoseo University)
Han, Chang-Suk (Dept. of Defense Science & Technology, Hoseo University)
Publication Information
Journal of the Korean Society for Heat Treatment / v.23, no.1, 2010 , pp. 23-28 More about this Journal
Abstract
The cylindrical magnetron sputtering has not been widely used, although this system is useful for only certain types of applications such as fiber coatings. This paper presents electrode configurations which improved the complicacy of the target assembly by using the positive voltage power supply. It is a modified type which has a target constructed with a large cylindrical part, a conical part and a small cylindrical part. When positive voltage was applied to an anode, a stable glow discharge was established and a high deposition rate was obtained. The substrate bias current was monitored to estimate the effect of ion bombardment. As a result, it was found that the substrate current was large. With cylindrical and conical cathode magnetron sputter deposition on the surface of the substrate to prevent re-sputtering, ion impact because it can increase the effectiveness with excellent ductility and adhesion of Ti film deposition can be obtained. We board at the front end of the ground resistance of $5\;k{\Omega}$ attached to the substrate potential can be controlled easily, and Ti film deposition with excellent adhesion can be obtained. Microstructure and morphology of Ti films deposited on pure Cu wires were investigated by scanning electron microscopy in relation to preparation conditions. High level ion bombardment was found to be effective in obtaining a good adhesion for Cu wire coatings.
Keywords
Cylindrical magnetron sputtering; Glow discharge; Ion bombardment; Pure Cu wire; Adhesion;
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Times Cited By KSCI : 1  (Citation Analysis)
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