• Title/Summary/Keyword: Ion leakage

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The Design and Implementation ion for Prevent ing A memory leakage of Memory Pool on Memory Management of Real-Time Operating Systems (실시간 운영체제의 메모리 관리에서 메모리 풀의 메모리 누수 방지 기법 설계 및 구현)

  • 조문행;정명조;유용선;이달한;이철훈
    • Proceedings of the Korean Information Science Society Conference
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    • 2004.10a
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    • pp.628-630
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    • 2004
  • 실시간 운영체제가 탑재되는 임베디드 시스템의 공간제약 특성상 한정된 자원을 가질 수밖에 없기 때문에 자원의 효율적인 사용 및 관리가 필수적이다. 특히 CPU 와 함께 한정된 크기의 메모리는 운영체제의 중요한 자원으로, 효율적인 메모리 관리를 통해 시스템의 성능을 향상시킬 수 있다. 본 논문에서는 실시간 운영체제의 동적 메모리 관리기법 중 메모리 풀에서의 메모리 누수 방지 기법을 설계 및 구현하였다

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Dielectric properties of Pt/PVDF/Pt modified by low energy ion beam irradiation

  • Sung Han;Yoon, Ki-Hyun;Jung, Hyung-Jin;Koh, Seok-Keun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.110-110
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    • 1999
  • Polyvinylidenefluoride (PVDF) is most used in piezoelectric polymer industry. Electrode effect on the electrical properties of PVDF has been investigated. al has been used due to fair adhesion for PVDF. Work function of metal plays an important role on the electrical properties of ferroelectrics for top and /or bottom electrode. However, Al has much lower work function than Pt or Au and so leakage current of Al/PVDF/Al may be large. Pt or Au has not been used for electrode of PVDF system due to poor adhesion. PVDF irradiated by Ar+ ion beam with O2 environment takes good adhesion to inert metal. Contact angle of PVDF to triple distilled water was reduced from 75$^{\circ}$ to 31$^{\circ}$ at 1$\times$1015 Ar+/cm2. Working pressure was 2.3$\times$10-4 Torr and base pressure was 5$\times$10-6 Torr. Pt was deposited by ion beam sputtering and thickness of pt film was about 1000$\AA$. in previous study, enhancing adhesion of Pt on PVDF was shown. in this study, effect of electrode on PVDF will be represented.

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Swelling and hydraulic characteristics of two grade bentonites under varying conditions for low-level radioactive waste repository design

  • Chih-Chung Chung;Guo-Liang Ren;I-Ting Chen;Che-Ju, Cuo;Hao-Chun Chang
    • Nuclear Engineering and Technology
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    • v.56 no.4
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    • pp.1385-1397
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    • 2024
  • Bentonite is a recommended material for the multiple barriers in the final disposal of low-level radioactive waste (LLW) to prevent groundwater intrusion and nuclear species migration. However, after drying-wetting cycling during the repository construction stage and ion exchange with the concrete barrier in the long-term repository, the bentonite mechanical behaviors, including swelling capacity and hydraulic conductivity, would be further influenced by the groundwater intrusion, resulting in radioactive leakage. To comprehensively examine the factors on the mechanical characteristics of bentonite, this study presented scenarios involving MX-80 and KV-1 bentonites subjected to drying-wetting cycling and accelerated ion migration. The experiments subsequently measured free swelling, swelling pressure, and hydraulic conductivity of bentonites with intrusions of seawater, high pH, and low pH solutions. The results indicated that the solutions caused a reduction in swelling volume and pressure, and an increase in hydraulic conductivity. Specifically, the swelling capability of bentonite with drying-wetting cycling in the seawater decreased significantly by 60%, while hydraulic conductivity increased by more than three times. Therefore, the study suggested minimizing drying-wetting cycling and preventing seawater intrusion, ensuring a long service life of the multiple barriers in the LLW repository.

Studies on the cellular metabolism in microorganisms as influenced by gamma-irradiation.(V) "On the membrane permeability changes and leakage of celluar constituents of irradiated yeast cell" (미생물의 세포생리에 미치는 전이방사선의 영향에 관한 연구 (제 5 ) "-의 과성에 대한 $\gamma$-의 영향에 대하여")

  • 김종협;전세열;김희자
    • Korean Journal of Microbiology
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    • v.6 no.2
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    • pp.54-62
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    • 1968
  • The effect of gamma-ray on yeast cells Sacch. cerevisiae, and the leakage of cellular constituents such as carbohydrates, ribose, amino acids, inorganic phosphates and organic phosphates have been studied. The samples of yeast cells washed throughly and starved intensively, radiation effects were compared with those of control (un-starved), the irradiation dose rates are in the range from 24 Kr. up. to 480, Kr. The loss of 260m$\mu$. absorbing material, are also observed. Mechanisms of membrane damage by gamma-irradiation are discussed corelating to permeability changes and loss of substances, then active and passive transport process are also under considerations in discussion. The experimental results are as follows, 1. Carbohydrates of yeast cell leak out by gamma-irradiation, and amounts of loss increase proportionally as the increasing of radiation dose, curve of carbohydrates loss in starved cells is parallel with those of non-starved cells. 2. Ribose leak out less than that of carbohydrate from irradiated cell, the dose response curve of loss is straight and proportional to the increasing of radiation doses, slope of the curve is much lower than of carbohydrates. 3. Amino acids also leak out and the curve of losses to radiation is not proportional, it is revealed that there are little losses from yeast at lower doses of irradiation. 4. The losses of inorganic phosphates increase unproportionally to the increasing of irradiation doses, there are little leakage at the lower doses of irradiation. The losses of organic phosphates increase proportionally to the increasing of irradiation doses, and the amount of losses are much more than that of inorganic phosphate at lower doses of irradiation. 5. Leakage from irradiated yeast cells was shown to be due to passive transport process not an energy requiring process of ion transport. 6. Loss of 260 m$\mu$. absorbing material is little more than that of control yeast by the gamma-irradiation dose of 120K.r. and 240K.r.

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Analysis of a Novel Elevated Source Drain MOSFET with Reduced Gate-Induced Drain Leakage and High Driving Capability (Gate-Induced Drain Leakage를 줄인 새로운 구조의 고성능 Elevated Source Drain MOSFET에 관한 분석)

  • Kim, Gyeong-Hwan;Choe, Chang-Sun;Kim, Jeong-Tae;Choe, U-Yeong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.6
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    • pp.390-397
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    • 2001
  • A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.

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Selection of oxidative stress-tolerant sweetpotato cultivars for cultivation on marginal lands (조건불리지역 재배를 위한 산화스트레스 내성 고구마 품종의 선발)

  • Kim, Yun-Hee;Park, Sung-Chul;Yang, Kyoung-Sil;Zhou, Zhilin;Zhao, Donglan;Ma, Daifu;Jeong, Jae-Cheol;Lee, Haeng-Soon;Kwak, Sang-Soo
    • Journal of Plant Biotechnology
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    • v.36 no.3
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    • pp.219-223
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    • 2009
  • Oxidative stress derived from excess reactive oxygen species (ROS) is a major damaging factor for plants exposed to environmental stresses. Sweetpotato [Ipomoea batatas (L.) Lam] has a relatively broad adaptability to harsh environmental conditions compared to other staple crops. In this study, to select stress-tolerant sweetpotato cultivars for sources of molecular breeding on marginal lands, we evaluated the ion leakage values in 10 different cultivars after treatment of methyl viologen (MV), an ROS-generating nonselective herbicide, to leaf discs. DPPH radical scavenging activity and the contents of total phenolics were also investigated. The ion leakage of each cultivar showed a diverse value, which is well correlated with DPPH radical scavenging activity of each cultivar. DPPH radical scavenging activity also showed a high corelation with the contents of total phenolic contents. Three cultivars of Yanshu 8, Shinhwangmi and Shinzami showed high antioxidant activity. Our results suggest that a simple and efficient DPPH radical scavenging activity would be a suitable method to select potential cultivars with enhanced tolerance to multiple environmental stress.

Influence of low dose ${\gamma}$ radiation on the physiology of germinative seed of vegetable crops (저선량 감마선이 채소 발아종자의 생리활성에 미치는 영향)

  • Kim, Jae-Sung;Lee, Eun-Kyung;Back, Myung-Hwa;Kim, Dong-Hee;Lee, Young-Bok
    • Korean Journal of Environmental Agriculture
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    • v.19 no.1
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    • pp.58-61
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    • 2000
  • This study was conducted to determine the effect of low dose ${\gamma}-ray$ on the germination rate and physiology of germinative seeds of welsh onion ( Allicm fistulosum L. cv. Sukchangwoidae ) and spinach ( Spinacia oleracea L. cv. Chungrok ). The germination rate of irradiation group was much higher than that of the control. Especially it was noticeably higher in 1 or 2 Gy irradiation groups in the sowing spinach seeds on paper towel. On the welsh onion, the germination rate of the 1 Gy irradiation group increased by 17% compared to that of the control. Ion leakage from seeds irradiated with low dose of ${\gamma}-ray$ was decreased compared to that from the control especially at the early stage of incubation when examined by means of electric conductance. This tendency was confirmed in seeds of welsh onion and spinach. Starch hydrolysis was stimulated by ${\gamma}-ray$ irradiation in welsh onion. Furthermore ${\gamma}-ray$ irradiation was beneficial to keeping the vitality of seeds as determined through decarboxylation of glutamic acid.

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The Mixed-Bed Ion Exchange Performance and Temperature Effects at Ultra-Low Concentrations - 2.Temperature Effects - (초저이온 농도범위에서 혼합층 이온교환능과 온도의 영향 - 2. 온도의 영향 -)

  • Yoon, Tae Kyung;Noh, Byeong Il;Lee, Chang Won;Moon, Byung Hyun;Lee, Gang Choon;Jo, Myung Chan
    • Applied Chemistry for Engineering
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    • v.10 no.2
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    • pp.206-211
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    • 1999
  • Mixed-bed ion exchange performance was studied experimentally with variations of cation to anion resin ratio, resin weight and temperature at ultralow sodium chloride solution concentrations of less than $1.0{\times}10^{-4}M$. Analyzing the effluent concentration histories the performance test was examined as a function of tested solution volume for a laboratory-scale continuous flow column until both the cation and anion-exchange resins were exhausted. Initial leakage was observed for both cation and anion breakthrough curves, but serious at cation breakthrough curve because of low selectivity coefficient. The slope of breakthrough curve was affected by selectivity coefficient and temperature. The slope of anion breakthrough curve was steep because of the large selectivity coefficient, and ion exchange rates increased as temperature increased. The temperature effect decreased as the total volume was increased or as the resins were exhausted.

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Studies on the Sorption and Fixation of Cesium by Vermiculite (II)

  • Lee, Sang-Hoon
    • Nuclear Engineering and Technology
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    • v.6 no.2
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    • pp.97-111
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    • 1974
  • The adsorption mechanism of Cs-137 in low level radioactive solution by vermiculite treated with Na ion is studied in order to investigate its effective utilization for the radioactive effluent treatment. The beneficial role of Na-vermiculite is that Na ion can induce the wider c-axis spacing in which Cs ion can be sorbed in vermiculite. Cation exchange capacity and distribution coefficient of cesium seems to be influenced by the variation of c-axis spacing of vermiculite. Comparative identification and detection with the characteristic analyses of X-ray diffraction and electron diffraction patterns, diffrential thermal analysis and electron microscopy of Na-, K- and Cs-vermiculite are studied for the phemomena of Cs adsorption by vermiculite. This importance of the utilization in terms of adsorption and fixation of cesium involving vermiculite is discussed. It is found that the Na-vermiculite is valuable outside charging material for high level radioactive liquid waste storage tank of underground to protect the pollution of the underground water.

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Determination of optimal ion implantation conditions to prevent double snapback of high voltage operating DDDNMOS device for ESD protection (고전압 정전기 보호용 DDDNMOS 소자의 더블 스냅백 방지를 위한 최적의 이온주입 조건 결정)

  • Seo, Yong-Jin
    • Journal of IKEEE
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    • v.26 no.3
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    • pp.333-340
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    • 2022
  • Process and device simulations were performed to determine the optimal ion implantation conditions to prevent double snapback of high voltage operating DDDNMOS (double diffused drain N-type MOSFET) device for ESD protection. By examining the effects of HP-Well, N- drift and N+ drain ion implantation on the double snapback and avalanche breakdown voltages, it was possible to prevent double snapback and improve the electrostatic protection performance. If the ion implantation concentration of the N- drift region rather than the HP-Well region is optimally designed, it prevents the transition from the primary on-state to the secondary on-state, so that relatively good ESD protection performance can be obtained. Since the concentration of the N- drift region affects the leakage current and the avalanche breakdown voltage, in the case of a process technology with an operating voltage greater than 30V, a new structure such as DPS or colligation of optimal process conditions can be applied. In this case, improved ESD protection performance can be realized.