• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.946-949
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• 1999

In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.

• Journal of Magnetics
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• v.6 no.3
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• pp.77-79
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• 2001

The semi-empirical superposition model has been applied to calculate the zero field splitting parameters of $Mn^{2+}$ion in $LiTaO_3$ single crystal, assuming that $Mn^{2+}$ion occupies one of two possible sites: $Li^{l+} \;or\; Ta^{5+}$ site, respectively. The 2nd-order axial zero field splitting parameters are $958\times10^{-4}cm^{-1}\; at\; Li^{1+}$ site and $193\times 10^{-4}cm^{-1} \;at\; Ta^{5+}$ site for $Mn^{2+}$ions. The 4th-order zero field splitting parameters at $Li^{l+} \;and\; Ta^{5+}$ sites are also determined. These calculated zero field splitting parameters are very important to determine the substitutional sites of doped impurity ions in $LiTaO_3$ crystal.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.579-583
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• 2003

HgGa$_2$S$_4$: Co$^{2＋}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the HgGa$_2$S$_4$: Co$^{2＋}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absolution peaks are assigned to be due to the electronic transitions between the split energy levels of Co$^{2＋}$ sited in the S$_4$ symmetry point.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.47-51
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• 2018

We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.486-490
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• 1993

Cd4SnSea6 & Cd4SnSe6 : Co2+ single crystals were grown by the chemical transport reaction (CTR) method. The grown single crystlas crrystallize in the monoclinic structrue and have the direct band gaps. The energy gaps of them are 1.68eV for Cd4SnSea6 & Cd4SnSe6 : Co2+ at 293K. The impurity opticla absorption peaks due to cobalt dped with impurity appear at 4879cm-1, 5392cm-1 and 6247 com-1, and are attributed to the electron transitions between the split energy levels of Co2+ ion sited at Td symmetry of Cd4SnSe6 single crystal.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.3
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• pp.137-141
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Journal of the Korean Ceramic Society
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• v.18 no.2
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• pp.75-78
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• 1981

The electrical conductivity of $(M_2O_3)_x (BaTiO_3)_{1-x}$ has been measured over the temperature range of 30 to 27$0^{\circ}C$. The substitution of rare earth oxide such as $La_2O_3$, $Nd_2O_3$, or $Dy_2O_3$ can be represented by $M_2O_3$. The additional mole fraction of the rare earth oxide is ranged over 0.0015 to 0.0030. The electrical conductivity exhibits an anomalous decrease near the tetragonal to cubic transition about 12$0^{\circ}C$. The decrease in the electrical conductivity is observed at the higher impurity concentrations owing to space charge layer. The increase in the electrical conductivity is observed as the impurity ion is varied from $La^{+3}$$Nd^{+3}$ to $Dy^{+3}$, due to overlap of 4f electrons of the inner shell.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.929-931
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• 1999

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, ozone gas pressure dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.94-97
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.