• Journal of the Korean Institute of Telematics and Electronics
• /
• v.21 no.4
• /
• pp.58-64
• /
• 1984

A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.

• Journal of the Korean Applied Science and Technology
• /
• v.16 no.1
• /
• pp.75-81
• /
• 1999

HF purification performance of an ion exchange membrane(IEM) was evaluated with 0.5% HF spiked with 10ppb of Fe, Ni and Cu nitrates. The result show that after less than five turnovers through an IEM, the metallic impurity concentration drops below 1ppb. The decrease rate can be fitted to a model assuming the experimental tanks to be continuously stirred tank reaction and that the metallic impurity concentration after the IEM is a function of the single-pass purification efficiency of the membrane, the concentration before purification and the metals desorbed form the IEM. The Concentration after purification was investigated up to a cumulative Fe loading of 300ppb in the 23 liter recirculated loop. It increases linearly vs. cumulative loading and can be explained by the Langmuir theory resulting in a purification efficiency at the equilibrium of close to 99.5% in this loading regime.

• Journal of the Korean Vacuum Society
• /
• v.8 no.4A
• /
• pp.482-489
• /
• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• Journal of the Korean Vacuum Society
• /
• v.8 no.2
• /
• pp.121-126
• /
• 1999

Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.6
• /
• pp.231-236
• /
• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• Electrical & Electronic Materials
• /
• v.10 no.5
• /
• pp.425-433
• /
• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• Journal of Magnetics
• /
• v.18 no.3
• /
• pp.221-224
• /
• 2013

Electron paramagnetic resonance (EPR) spectra of $Mn^{2+}$ impurity ion in Stoichiometric $LiNbO_3$ single crystal (SLN) was investigated with an X-band EPR spectrometer in the temperature range of 3 K~296 K. The intensity of EPR spectrum of $Mn^{2+}$ ion was increased to 20 K and decreased again below 20 K as the temperature decreases. The zero-field splitting parameter D decreased as the temperature increases. It was suggested that $Mn^{2+}$ ion substitute for $Nb^{5+}$ ion instead of $Li^+$ ion. No changes for hyperfine interaction of $Mn^{2+}$ ion was obtained in the temperature range of 3 K~296 K.

• Journal of the Korean Vacuum Society
• /
• v.13 no.2
• /
• pp.79-85
• /
• 2004

Secondary ion mass spectrometry(SIMS) and glow discharge mass spectrometry(GDMS) were used to determine the impurity concentrations of hydrogen, carbon, and oxygen elements in the Cu and Ta films, and the results of SIMS and GDMS analysis were carefully considered. The Cu and Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V(Cu films) or -125 V(Ta films) using a non-mass separated ion beam deposition method. As a result of SIMS with Cs+ ion beam, in the case of the Cu and Ta films deposited without the substrate bias voltage, many strong peaks were observed, which is considered to be detected as a the cluster state such as CxHx, OxHx, CxOxHx. All the peaks of SIMS results could be interpreted by the combination of these dominant impurities. Moreover, it was confirmed that the quantitative results of GDMS analysis were accordant to the SIMS results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.12
• /
• pp.1078-1084
• /
• 2006

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.11
• /
• pp.99-104
• /
• 1993

We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.