Design of Self-ion assisted beam source (SIAB) based on electron focusing with concentric symmetrical electric field and Cu thin film growth by SIAB

동심원형 대칭 전기장 집속 방식을 응용한 자가 이온 보조 소스 제작 및 Cu 박막 증착

  • 송재훈 (한국과학기술연구원 박막기술연구센터) ;
  • 김기환 (한국과학기술연구원 박막기술연구센터) ;
  • 이충만 (한국과학기술연구원 박막기술연구센터) ;
  • 최성창 (한국과학기술연구원 박막기술연구센터) ;
  • 송종한 (한국과학기술연구원 특성분석센터) ;
  • 정형진 (한국과학기술연구원 박막기술연구센터) ;
  • 최원국 (한국과학기술연구원 박막기술연구센터)
  • Published : 1999.03.01

Abstract

Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.

Keywords

References

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