• Title/Summary/Keyword: Ion implant

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A Study on the DC parameter matching according to the shrink of 0.13㎛ technology (0.13㎛ 기술의 shrink에 따른 DC Parameter 매칭에 관한 연구)

  • Mun, Seong-Yeol;Kang, Seong-Jun;Joung, Yang-Hee
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.11
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    • pp.1227-1232
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    • 2014
  • This paper relates 10% shrink from $0.13{\mu}m$ design for core devices as well as input and output (I/O) devices different from previous poly length shrink size only. We analyzed body effect with different channel length and doping profile simulation. After fixing the gate oxide module process, LDD implant conditions were optimized such as decoupled plasma nitridation of gate oxide, TEOS oxide $100{\AA}$ before LDD implant and 22o tilt-angle(45o twist-angle) LDD implant respectively to match the spice DC parameters of pre-shrink and finally matched them within 5%.

A study on cytocompatibility of ion beam-irradiated chitosan sponges (이온 빔 조사 처리된 키토산 스펀지의 세포적합도에 관한 연구)

  • Ku, Young
    • Journal of Periodontal and Implant Science
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    • v.28 no.2
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    • pp.281-291
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    • 1998
  • Chitosan is a biodegradable and non-toxic material with a molecular weight of 800-1,500Kd which can be obtained in various forms with extraordinary chemical structures and biological characteristics of which enables it to be used in many fields as a biomaterial. Ion irradiation is a useful tool to modify chemical structures and physical properties of high molecular weight polymers. The basic hypothesis of this study is that when surface properties of chitosan in a sponge form are modified with ion beam-irradiation and cell adhesion properties of chitosan would improve and thereby increase the regenerative ability of the damaged bone. The purpose of this study was to illuminate the changes in the cytocompatibility of chitosan sponges after ion beam-irradiation as a preliminary research. Argon($Ar^+$) ions were irradiated at doses of $5{\times}10^{13}$, $5{\times}10^{15}$ at 35 keV on surfaces of each sponges. Cell adhesion and activity of alkaline phosphatases were studied using rat fetal osteoblasts. The results of this study show hat ion beam-irradiation at optimal doses($5{\times}10^^{13}\;Ar^+\;ion/cm^2$) is a useful method to improve cytocompatibility without sacrificing cell viability and any changing cell phenotypes. These results show that ion beam-irradiated chitosan sponges can be further applied as carriers in tissue engineering and as bone filling materials.

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BONE RESPONSE OF TWO DIFFERENT SURFACE TITANIUM SUBPERIOSTEAL IMPLANTS - ANODIZED SURFACE, IBAD HA COATING SURFACE (티타늄 임플랜트의 두 가지 표면처리방식에 대한 골반응 - 양극 산화표면, IBAD HA 코팅 표면)

  • Lee, In-Ku;Suh, Kyu-Won;Choi, Joon-Eon;Jung, Sung-Min;Ryu, Jae-Jun
    • The Journal of Korean Academy of Prosthodontics
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    • v.45 no.1
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    • pp.131-143
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    • 2007
  • Statement of the problem: In case of poor bone quality or immediately loaded implant, various strategies have been developed focusing on the surface of materials to improve direct implant fixation to the bone. The microscopic properties of implant surfaces play a major role in the osseous healing of dental implant. Purpose of study: This study was undertaken to evaluate bone response of ion beam-assisted deposition(IBAD) of hydroxyapatite(HA) on the anodized surface of subperiosteal titanium implants. Material and methods: Two half doughnut shape subperiosteal titanium implants were made. The control group was treated with Anodized surface treatment and the test group was treated with IBAD of HA on control surface. Then two implants inserted together into the subperiosteum of the skull of 30 rats and histological response around implant was observed under LM(light microscope) and TEM(transmission electron microscope) on 4th, 6th and 8th week. Results: Many subperiosteal implants were fixed with fibrous connective tissue not with bony tissue because of weak primary stability. The control group observed poor bone response and there was no significant change at any observation time. However the test group showed advanced bone formation and showed direct bone to implant contact under LM on 8th week. The test group observed much rER in the cell of osteoblast but the control group showed little rER under TEM. Conclusions: The test group showed better bone formation than the control group at the condition of weak primary stability. With these results IBAD surface treatment method on Anodized surface, may be good effect at the condition of weak primary stability.

BONE RESPONSE OF THREE DIFFERENT SURFACE IMPLANTS : HISTOMORPHOMETRIC, PERIO TEST VALUE AND RESONANCE FREQUENCY ANALYSIS IN BEAGLE DOGS

  • Choi, Joon-Eon;Suh, Kyu-Won;Lee, In-Ku;Ryu, Jae-Jun;Shin, Sang-Wan
    • The Journal of Korean Academy of Prosthodontics
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    • v.45 no.3
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    • pp.362-374
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    • 2007
  • Statement of problem. The intial stability for osseointegration of implant has been an interesting factor. Especially, in the case of poor bone quality or immediately loaded implant, various strategies have been developed focusing on the surface of materials to improve implant fixation to bone. The microscopic properties of implant surfaces play a major role in the osseous healing of dental implants. Purpose. The aims of this study are to perform a histologic and histomorphometric comparison of the healing characteristics of three different surfaces and the comparison of resonance frequency analysis (RFA) values measured by $Osstell^{TM}$ and perio-test values (PTV) measured by Periotest. Material and methods. A total of 24 screw titanium implants (Dentium Co., Seoul, Korea) with 6mm in length and 3.4mm in diameter, were placed in the mandible of 4 beagle dogs. Implants were divided into three groups following the surface treatment methods: Group I is machined(control group). Group II is anodically oxidized. Group III is coated 500nm in thickness with hydroxyapatite(HA) by ion beam assisted deposition(IBAD) on the anodized oxidization. Bone blocks from 2 dogs were caught after 3 weeks of covered healing and another blocks from 2 dogs after 6 weeks. RFA values and PTV were measured right after insertion and at 3 and 6weeks. Histomorphometric analysis was made with Kappa Image Base System to calculate bone-to-implant contact (BIC) and bone area inside the threads. Pearson's correlation analyses were performed to evaluate the correlation between RFA and PTV, BIC and bone area ratio of three different surfaces at 3 and 6 weeks. Results. 1) In all surface treatment methods, the RFA values decreased and the PTV values increased until 6 weeks in comparison to initial values. 2) At 3 weeks, no significant difference was found from bone-to-implant contact ratio and bone area ratio of three different surface treatment methods(P>0.05). However, at 6 weeks, different surface treatment methods showed significantly different bone-toimplant contact ratio and bone area ratio(P<0.05). 3) In the implants with the IBAD on the anodic oxidization, significant difference was found between the 3 weeks and the 6 weeks bone area ratio(P<0.05). 4) Correlation was found between the RFA values and the bone area ratio at 3 and 6 weeks with significant difference(P<0.05). Conclusions. These results indicate that the implants with the IBAD on the anodic oxidization may have a high influence on the initial stability of implant.

Influence of Ion Isolation on the Resistivity of Different Types of GaN

  • Johra, Fatima Tuz;Jung, Woo-Gwang
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.237.1-237.1
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    • 2011
  • Resistivity of GaN has been investigated under the influence of ion implantation. n-type, p-type and also undoped GaN has been used here. A ring shape pattern of Au was fabricated on GaN film by the photolithography technique. H, He and Ar were used for implantation. The ion implantation energy, fluence and post-implant annealing temperature varied in this research. Because of the making barrier in some selected area using ions, the resistivity changed in all the samples with the change of both fluence and energy. At room temperature, the resistivity of n-type GaN has been increased from $1.9{\times}10-2$ to $17.7{\times}10-2\;{\Omega}-cm$. This is high for He ion. But undoped and p-type GaN showed some anomalous character.

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Development of Analysis Simulation Tool of High-Energy Ion Implantation Process for GSI MOS Transistor (GSI급 MOS Transistor 개발을 위한 HEI (High-Energy Ion Implantation) 공정 분석 시뮬레이터 개발)

  • 손명식;박수현;이영직;권오근;황호정
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.946-949
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    • 1999
  • In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.

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Development of physically based 3D computer simulation code TRICSI for ion implantation into crystalline silicon

  • Son, Myung-Sik;Lee, Jun-Ha;Hwang, Ho-Jung
    • Journal of Korean Vacuum Science & Technology
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    • v.1 no.1
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    • pp.1-12
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    • 1997
  • A new three-dimensional (3D) Monte Carlo ion implantation simulator, TRICSI, has been developed to investigate 3D mask effects in the typical mask structure for ion implantation into crystalline silicon. We present the mask corner and mask size effects of implanted boron range profiles, and also show the calculated damage distributions by applying the modified Kinchin-Pease equation in the single-crystal silicon target. The simulator calculates accurately and efficiently the implanted-boron range profiles under the relatively large implanted area, using a newly developed search algorithm for the collision partner in the single-crystal silicon. All of the typical implant parameters such as dose, tilt and rotation angles, in addition to energy can be used for the 3D simulation of ion implantation.

The design and fabricationt for ion fraction measurement of plasma generator (플라즈마발생기의 이온분율 측정 장치 설계 및 제작)

  • Lee, Chan-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.368-368
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    • 2008
  • Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

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PLASMA SOURCE ION IMPLANTATION OF NITROGEN AND CARBON IONS INTO CO-CEMENTED WC

  • Han, Seung-Hee;Lee, Yeon-Hee;Lee, Jung-Hye;Kim, Hai-Dong;Kim, Gon-Ho;Kim, Yeong-Woo;Cho, Jung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.220-220
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    • 1999
  • In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.

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Surface Observation of Mg-HA Coated Ti-6Al-4V Alloy by Plasma Electrolytic Oxidation

  • Yu, Ji-Min;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.198-198
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    • 2016
  • An ideal orthopedic implant should provide an excellent bone-implant connection, less implant loosening and minimum adverse reactions. Commercial pure titanium (CP-Ti) and Ti alloys have been widely utilized for biomedical applications such as orthopedic and dental implants. However, being bioinert, the integration of such implant in bone was not in good condition to achieve improved osseointegraiton, there have been many efforts to modify the composition and topography of implant surface. These processes are generally classified as physical, chemical, and electrochemical methods. Plasma electrolytic oxidation (PEO) as an electrochemical route has been recently utilized to produce this kind of composite coatings. Mg ion plays a key role in bone metabolism, since it influences osteoblast and osteoclast activity. From previous studies, it has been found that Mg ions improve the bone formation on Ti alloys. PEO is a promising technology to produce porous and firmly adherent inorganic Mg containing $TiO_2$($Mg-TiO_2$ ) coatings on Ti surface, and the amount of Mg introduced into the coatings can be optimized by altering the electrolyte composition. In this study, a series of $Mg-TiO_2$ coatings are produced on Ti-6Al-4V ELI dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. Based on the preliminary analysis of the coating structure, composition and morphology, a bone like apatite formation model is used to evaluate the in vitro biological responses at the bone-implant interface. The enhancement of the bone like apatite forming ability arises from $Mg-TiO_2$ surface, which has formed the reduction of the Mg ions. The promising results successfully demonstrate the immense potential of $Mg-TiO_2$ coatings in dental and biomaterials applications.

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